CDM2205-800FP
SILICON
N-CHANNEL POWER MOSFET
5.0 AMP, 800 VOLT
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CDM2205-800FP
is an 800 volt N-Channel MOSFET designed for high
voltage, fast switching applications such as Power
Factor Correction (PFC), lighting and power inverters.
This MOSFET combines high voltage capability with
low rDS(ON), low threshold voltage, and low gate charge
for optimal efficiency.
MARKING CODE: CDM05-800FP
TO-220FP CASE
APPLICATIONS:
•
Power Factor Correction
•
Alternative energy inverters
•
Solid State Lighting
FEATURES:
•
High voltage capability (VDS=800V)
•
Low gate charge (Qg(tot)=17.4nC TYP)
•
Low rDS(ON) (2.2Ω TYP)
MAXIMUM RATINGS:
(TC=25°C unless otherwise noted)
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (Steady State)
ID
Maximum Pulsed Drain Current, tp=10μs
IDM
Continuous Source Current (Body Diode)
Maximum Pulsed Source Current (Body Diode)
Single Pulse Avalanche Energy (Note 1)
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
Note 1: L=30mH, IAS=4.5A, VDD=60V, RG=25Ω, Initial TJ=25°C
800
30
5.0
20
5.0
20
323
48
-55 to +150
2.6
120
UNITS
V
V
A
A
A
A
mJ
W
°C
°C/W
°C/W
IS
ISM
EAS
PD
TJ, Tstg
JC
JA
ELECTRICAL CHARACTERISTICS:
(TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=30V, VDS=0
IDSS
VDS=800V, VGS=0
BVDSS
VGS(th)
VSD
rDS(ON)
Crss
Ciss
Coss
VGS=0, ID=250μA
VGS=VDS, ID=250μA
VGS=0, IS=5.0A
VGS=10V, ID=2.5A
VDS=25V, VGS=0, f=1.0MHz
VDS=25V, VGS=0, f=1.0MHz
VDS=25V, VGS=0, f=1.0MHz
800
2.0
3.0
0.9
2.2
2.8
705
72
MAX
100
1.0
4.0
1.4
2.7
UNITS
nA
μA
V
V
V
Ω
pF
pF
pF
R3 (19-August 2015)
CDM2205-800FP
SILICON
N-CHANNEL POWER MOSFET
5.0 AMP, 800 VOLT
ELECTRICAL
SYMBOL
Qg(tot)
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Qrr
CHARACTERISTICS - Continued:
(TC=25°C unless otherwise noted)
TEST CONDITIONS
TYP
UNITS
VDS=640V, VGS=10V, ID=5.0A (Note 2)
17.4
nC
VDS=640V, VGS=10V, ID=5.0A (Note 2)
VDS=640V, VGS=10V, ID=5.0A (Note 2)
VDD=400V, ID=5.0A, RG=25Ω (Note 2)
VDD=400V,
VDD=400V,
VDD=400V,
ID=5.0A, RG=25Ω (Note 2)
ID=5.0A, RG=25Ω (Note 2)
ID=5.0A, RG=25Ω (Note 2)
VGS=0, IS=5.0A, di/dt=100A/μs (Note 2)
VGS=0, IS=5.0A, di/dt=100A/μs (Note 2)
3.70
7.88
13
27
44
30
549
2.95
nC
nC
ns
ns
ns
ns
ns
μC
Note 2: Pulse Width < 300μs, Duty Cycle < 2%
TO-220FP CASE - MECHANICAL OUTLINE
R4
PIN CONFIGURATION
LEAD CODE:
1) Gate
2) Drain
3) Source
MARKING CODE: CDM05-800FP
R3 (19-August 2015)
w w w. c e n t r a l s e m i . c o m
CDM2205-800FP
SILICON
N-CHANNEL POWER MOSFET
5.0 AMP, 800 VOLT
TYPICAL ELECTRICAL CHARACTERISTICS
R3 (19-August 2015)
w w w. c e n t r a l s e m i . c o m
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