PD -20353D
SCHOTTKY RECTIFIER
HIGH EFFICIENCY SERIES
22GQ100
30A, 100V
Major Ratings and Characteristics
Characteristics
II
F(AV)
Rectangular
waveform
V
RRM
I
FSM
@ tp = 8.3ms half-sine
V
F
@ 30Apk, T
J
=125°C
22GQ100
30
100
400
0.90
Units
A
V
A
V
°C
Description/Features
The 22GQ100 Schottky rectifier has been expressly
designed to meet the rigorous requirements of hi-rel
environments. It is packaged in the hermetic isolated
TO-254AA package. The device's forward voltage drop
and reverse leakage current are optimized for the lowest
power loss and the highest circuit efficiency for typical high
frequency switching power supplies and resonent power
converters. Full MIL-PRF-19500 quality conformance
testing is available on source controlled drawings to TX,
TXV and S levels.
• Hermetically Sealed
• High Frequency Operation
• Guard Ring for Enhanced Ruggedness and Long
Term Reliability
• Schottky Diodes Connected in Series
• Electrically Isolated
T
J
, T
stg
Operating and storage
-55 to 150
0.12 [.005]
3.78 [.149]
3.53 [.139]
A
13.84 [.545]
13.59 [.535]
6.60 [.260]
6.32 [.249]
1.27 [.050]
1.02 [.040]
CASE STYLE
17.40 [.685]
16.89 [.665]
1
2
3
20.32 [.800]
20.07 [.790]
13.84 [.545]
13.59 [.535]
B
C
17.40 [.685]
16.89 [.665]
0.84 [.033]
MAX.
3X
3.81 [.150]
2X
1.14 [.045]
0.89 [.035]
0.36 [.014]
B A
3.81 [.150]
(ISOLATED BASE)
NOTES :
1.
2.
3.
4.
DIMENS IONING & T OLE RANCING PER AS ME Y14.5M-1994.
AL L DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES ].
CONT ROL LING DIMENS ION: INCH.
CONF ORMS TO JEDE C OUTLINE T O-254AA.
1
CATHODE
2
3
ANODE
IR Case Style TO-254AA
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1
02/22/02
22GQ100
Voltage Ratings
Part number
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
22GQ100
100
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
See Fig. 5
I
FSM
Max. Peak One Cycle Non - Repetitive
Surge Current
400
A
@ t
p
= 8.3 ms half-sine
Limits
30
Units
A
Conditions
50% duty cycle @ T
C
= 100°C, rectangular waveform
Electrical Specifications
Parameters
V
FM
Max. Forward Voltage Drop
See Fig. 1Q
Limits
1.1
1.6
0.9
1.3
Units
V
V
V
V
mA
mA
pF
nH
@ 20A
@ 35A
@ 20A
@ 35A
T
J
= 25°C
T
J
= 125°C
Conditions
T
J
= 25°C
T
J
=1 25°C
V
R
= rated V
R
I
RM
C
T
L
S
Max. Reverse Leakage Current
See Fig. 2
Q
Max. Junction Capacitance
Typical Series Inductance
0.8
45
1400
7.8
V
R
= 5V
DC
( 1MHz, 25°C )
Measured from anode lead to cathode lead
6mm ( 0.025 in.) from package
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max.Junction Temperature Range
Max. Storage Temperature Range
to Case
wt
Weight (Typical)
Die Size
Case Style
9.3
200X200
TO-254AA
g
mils
Limits Units
-55 to 150
-55 to 150
1.0
°C
°C
°C/W
DC operation
Conditions
R
thJC
Max. Thermal Resistance, Junction
See Fig. 4
Q
Pulse Width < 300µs, Duty Cycle < 2%
2
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22GQ100
100
T = 1 50°C
J
125°C
100°C
10
1
0.1
0.01
25°C
0.001
A
0
20
40
60
R
0.0001
80
100
R ev e rse V o lta g e - V
(V )
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
Fig. 1 - Max. Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
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22GQ100
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
22GQ100
R
thJC
(DC) = 1.0°C/W
Fig. 5 - Max. Allowable Case Temperature Vs.
Average Forward Current
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/02
4
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