Bulletin I2117 rev. D 12/98
SAFE
IR
Series
25TTS..S
SURFACE MOUNTABLE
PHASE CONTROL SCR
Description/Features
The 25TTS..S
SAFE
IR
series of silicon controlled
rectifiers are specifically designed for medium
power switching and phase control applications.
The glass passivation technology used has reli-
able operation up to 125° C junction temperature.
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identical
package outlines.
V
T
I
TSM
< 1.25V @ 16A
= 300A
V
RRM
800 to 1600V
Output Current in Typical Applications
Applications
NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz (140µm) copper
Aluminum IMS, R
thCA
= 15°C/W
Aluminum IMS with heatsink, R
thCA
= 5°C/W
T
A
= 55°C, T
J
= 125°C, footprint 300mm
2
Single-phase Bridge
3.5
8.5
16.5
Three-phase Bridge Units
5.5
13.5
25.0
A
Major Ratings and Characteristics
Characteristics
I
T(AV)
Sinusoidal
waveform
I
RMS
V
RRM
/ V
DRM
I
TSM
V
T
dv/dt
di/dt
T
J
@ 16 A, T
J
= 25°C
25
up to 1600
300
1.25
500
150
- 40 to 125
A
V
A
V
V/µs
A/µs
°C
25TTS..S
16
Units
A
D
2
PAK (SMD-220)
1
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25TTS..S
SAFE
IR
Series
Bulletin I2117 rev. D 12/98
Voltage Ratings
Part Number
25TTS08S
25TTS12S
25TTS16S
peak reverse voltage
V
800
1200
1600
V
RRM
, maximum
peak direct voltage
V
800
1200
1600
V
DRM
, maximum
I
RRM
/
I
DRM
125°C
mA
10
Absolute Maximum Ratings
Parameters
I
T(AV)
Max. Average On-state Current
I
RMS
I
TSM
I
2
t
I
2
√t
V
TM
r
t
Max. RMS On-state Current
Max. Peak One Cycle Non-Repetitive
Surge Current
Max. I
2
t for fusing
Max. I
2
√t
for fusing
Max. On-state Voltage Drop
On-state slope resistance
25TTS..S
16
25
300
350
450
630
6300
1.25
12.0
1.0
0.5
10
Typ.
--
100
Max.
100
150
Units
A
Conditions
@ T
C
= 93° C, 180° conduction half sine wave
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
A
2
s
A
2
√s
V
mΩ
V
mA
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
t = 0.1 to 10ms, no voltage reapplied
@ 16A, T
J
= 25°C
T
J
= 125°C
T
J
= 25 °C
T
J
= 125 °C
V
T(TO)
Threshold Voltage
I
RM
/I
DM
Max.Reverse and Direct
Leakage Current
I
H
Holding Current
V
R
= rated V
RRM
/ V
DRM
Anode Supply = 6V, Resistive load, Initial I
T
=1A
mA
25TTS08S, 25TTS12S
25TTS16S
mA
V/µs
A/µs
Anode Supply = 6V, Resistive load
I
L
Max. Latching Current
200
500
150
dv/dt Max. Rate of Rise of off-state Voltage
di/dt Max. Rate of Rise of turned-on Current
2
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25TTS..S
SAFE
IR
Series
Bulletin I2117 rev. D 12/98
Triggering
Parameters
P
GM
Max. peak Gate Power
P
G(AV)
Max. average Gate Power
+ I
GM
Max. paek positive Gate Current
- V
GM
Max. paek negative Gate Voltage
I
GT
Max. required DC Gate Current
to trigger
25TTS..S
8.0
2.0
1.5
10
60
45
20
Units
W
Conditions
A
V
mA
Anode supply = 6V, resistive load, T
J
= - 10°C
Anode supply = 6V, resistive load, T
J
= 25°C
Anode supply = 6V, resistive load, T
J
= 125°C
V
Anode supply = 6V, resistive load, T
J
= - 10°C
Anode supply = 6V, resistive load, T
J
= 25°C
Anode supply = 6V, resistive load, T
J
= 125°C
T
J
= 125°C, V
DRM
= rated value
mA
T
J
= 125°C, V
DRM
= rated value
V
GT
Max. required DC Gate Voltage
to trigger
2.5
2.0
1.0
V
GD
I
GD
Max. DC Gate Voltage not to trigger
Max. DC Gate Current not to trigger
0.25
2.0
Switching
Parameters
t
gt
t
rr
t
q
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
25TTS..S
0.9
4
110
Units
µs
T
J
= 25°C
T
J
= 125°C
Conditions
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range
Max. Storage Temperature Range
Soldering Temperature
R
thJC
Max. Thermal Resistance Junction
to Case
R
thJA
Typ. Thermal Resistance Junction
to Ambient (PCB Mount)**
wt
T
Approximate Weight
Case Style
2 (0.07)
g (oz.)
D
2
Pak (SMD-220)
25TTS..S
- 40 to 125
- 40 to 125
240
1.1
40
Units
°C
°C
°C
°C/W
°C/W
Conditions
for 10 seconds (1.6mm from case)
DC operation
**When mounted on 1" square (650mm
2
) PCB of FR-4 or G-10 material 4 oz (140µm) copper 40°C/W
For recommended footprint and soldering techniques refer to application note #AN-994
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3
25TTS..S
SAFE
IR
Series
Bulletin I2117 rev. D 12/98
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
130
25TTS.. Series
R
thJC
(DC) = 1.1 °C/W
130
25TTS.. Series
R
thJC
(DC) = 1.1 °C/W
120
120
Conduction Angle
110
Conduction Period
110
30°
100
60°
90°
120°
180°
90
0
5
10
15
20
Average On-state Current (A)
100
90
60°
30°
80
0
5
10
90°
120°
180°
15
20
DC
25
30
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
Maximum Average On-state Power Loss (W)
Maximum Average On-state Power Loss (W)
Fig. 2 - Current Rating Characteristics
35
30
25
20
RMS Limit
15
10
5
0
0
5
10
15
20
25
30
Average On-state Current (A)
Conduction Period
25
180°
120°
90°
60°
30°
RMS Limit
20
15
DC
180°
120°
90°
60°
30°
10
Conduction Angle
5
25TTS.. Series
T
J
= 125°C
25TTS.. Series
T
J
= 125°C
0
0
4
8
12
16
20
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
350
Fig. 4 - On-state Power Loss Characteristics
400
350
300
250
200
150
25TTS.. Series
100
0.01
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
300
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T
J
= 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T
J
= 125°C
No Voltage Reapplied
Rated V
RRM
Reapplied
250
200
25TTS.. Series
150
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
0.1
Pulse Train Duration (s)
1
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
4
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25TTS..S
SAFE
IR
Series
Bulletin I2117 rev. D 12/98
1000
Instantaneous On-state Current (A)
100
T
J
= 25°C
10
T
J
= 125°C
25TTS.. Series
1
0
1
2
3
4
5
Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
Transient Thermal Impedance Z thJC (°C/W)
10
Steady State Value
(DC Operation)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single Pulse
25TTS.. Series
0.01
0.0001
0.1
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Gate Characteristics
100
Instantaneous Gate Voltage (V)
10
Rectangular gate pulse
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
(a)
(b)
TJ = -10 °C
TJ = 25 °C
TJ = 125 °C
1
(4)
(3)
(2)
(1)
VGD
IGD
0.1
0.001
0.01
25TTS.. Series
0.1
1
Frequency Limited by PG(AV)
10
100
Instantaneous Gate Current (A)
Fig. 9 - Thermal Impedance Z
thJC
Characteristics
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