TEC N 940525
Hologram Laser
Hologram Laser(1 beam) for Magneto-Optical disk
s
Features
(1) Maximum optical output: 35mW
(2) Pickups reduced in size and weight on request
(3) The housing of pickups shifted from aluminum
die-cast to formed resin on request (reducing the
weight to 1/3)
(4) Since its semiconductor laser, signal detection
photocell, and circuit array are assembled in a
package, the optical pickup is simple in
assembling and adjustment
s
LT0H12M
Outline Dimensions
(Unit: mm)
φ
9.0
Hologram glass
Cap glass
φ
7.6
φ
6.6
3.6
Z
LD chip
Reference surface
s
Applications
(1) Magneto-optical disk drives
(2) CD-Rs
10 -
φ
0.45
φ
4.9
0.4
5
6
7
4
45˚
45˚
3
8
X
2
1
10
9
Y
1.0
allowance =
±0.2mm
[Terminal connection]
3
4
Laser diode
8
10
G
D1
Monitor photodiode
D2
D3
D4
7
9
1
2
s
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Optical power output*1
P
O
35
Laser
2
Reverse
Monitor photodiode
V
R
30
voltage
Photodiode for signal detection
15
Operating temperature*2
Topr
-10 to +50
Storage temperature *2
Tstg
-40 to +85
Soldering temperature *3
Tsol
260(5s or less)
(Notice)
Units
mW
V
*1 Output power from LD chip
*2 Case temperature
*3 At the position of 1.6mm from the
bottom face of resin package.
˚C
• In the absence of device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices
shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
• Specifications are subject to change without notice for improvement.
TEC N 940525
LT0H12M
s
Electro-optical Characteristics
Parameter
Threshold current
Operating current
Operating voltage
Wavelength *2
Monitor current
Laser
(without
hologram
glass)
Angle
Radiation
Characteristics
*3
Emission
Point
accuracy
Parallel
Perpen-
dicular
(Tc=25˚C)
Symbol
Ith
Iop
Vop
λp
Im
θ
//
θ
⊥
Condition
-
P
o
=30mW *1
P
o
=30mW *1 ,V
R
=15V
MIN
-
-
-
770
0.1
8
20.
-20
-2
-3
-80
0.3
-
-
-
15
-
0.6
0.8
85
260
-
TYP
60
115
1.85
780
0.3
9.5
26
-
-
-
-
0.55
10
-
8
-
-
2.8
3
170
460
10
MAX
80
150
2.2
795
2
13
32
20
2
3
80
0.8
-
150
-
-
20
5
5.4
270
670
140
Units
mA
mA
V
nm
mA
˚
˚
%
˚
˚
µm
mW/mA
µA/mW
nA
pF
V
nA
pF
nA
ns
Ripple
∆φ
//
∆φ
⊥
Positon
∆
X
,Y,Z
Angle
η
S
I
D
Ct
V
R
I
d
Ct
Isc
P
O
=30mW *1
Differentioal efficiency
Monitor
Photodiode
Sensitivity
Dark current
Terminal capacitance
Reverse voltage
Dark current
Terminal capacitance
Short circuit current *4
Response time *6
-
20mW
Iop(30mW) - Iop(10mW)
V
R
=15V
I
R
=10µA
V
R
=15V
V
R
=15V,f=1MH
Z
Ev=1000Lx *5
V
R
=15V,R
L
=180Ω
A,B
A,B
A
B
A
B
A,B
Photodiode
for signal
detection
t
r
,
t
f
Output power form LD chip
Oscillation mode, transverse single mode
An angle for 50% of the peak intensity (full angle at half maximum).
Values in each element. Elements other than subject elements shall be measured
while the anode and the cathode are short-circuited to each other
*5 Illumination intensity by CIE standard light (Tungsten lamp)
*6 Measuring method is shown below
*1
*2
*3
*4
50%
Input
Laser diode
λ=780nm
Input
Output
R
L
=180Ω
V
R
=15V
Output
90%
10%
t
r
*7
Applicabledivisions correspond to pattern segment No.
Segment No.
D2,D3 ••••••• A
D1,D4 ••••••• B
t
f
D1
D2
D3
D4
TEC N 940525
LT0H12M
s
Electro-optical Characteristics *1
Parameter
Focus error signal offsetting *2
Lead-in for focus error signal *3
Radial offsetting *4
FES Output amplitude *5
RES Output amplitude *5
Condition
MIN
-20
-
-10
2.4
2.5
TYP
-12
90
-
3.9
3.3
(Tc=25˚C)
MAX
Units
-4
%
-
µ
m
10
%
5.0
µ
A p-p
4.1
µ
A p-p
Laser output 4.2mW
*1 Measuring method is shown below.
Actuator
Laser
Driver
HL
NA=0.35
f=6.0mm
NA=0.5
f=3.45mm
MO Disk
C.L.
O.L
* Distance between
C.L-O.L: 27mm C.L: Collimator lens O.L: Objective lens
Measuring method of electro-optical characteristics
*2
FES output (a)/FESp-p at Maximum point of
the FES output amplitude
*3
GND
a
FESp-p
GND
*4 ( a - b ) / 2 ( a + b )
a
GND
b
*5 Values at 4.2mW of the laser output
Both FES output amplitude (D2-D3)
and RES output amplitude (D1-D4) are
p-p values at focusing oscillation
*4 ( a - b ) / ( a + b )
a
b
Microchip MCU
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