LT1002
Dual, Matched Precision
Operational Amplifier
FEATURES
s
DESCRIPTION
The LT
®
1002 dual, matched precision operational amplifiers
combine excellent individual amplifier performance with tight
matching and temperature tracking between amplifiers.
In the design, processing, and testing of the device, particular
attention has been paid to the optimization of the entire
distribution of several key parameters and their matching.
Consequently, the specifications of even the low cost commer-
cial grade (the LT1002C) have been spectacularly improved
compared to presently available devices.
Essentially, the input offset voltage of all units is less than
80µV, and matching between amplifiers is consistently beter
than 60µV (see distribution plot below). Input bias and offset
currents, channel separation, common mode and power suply
rejections of the LT1002C are all specified at levels which were
previsouly attainable only on very expensive, selected grades
of other dual devices. Power dissipation is nearly halved
compared to the most popular precision duals, without ad-
versely affecting noise or speed performance. A by-product of
lower dissipation is decreased warm-up drift. For even better
performance in a single precision op amp, refer to the LT1001
data sheet. A bridge signal conditioning application is shown
below. This circuit illustrates the requirement for both excel-
lent matching and individual amplifier specifications.
, LTC and LT are registered trademarks of Linear Technology Corporation.
s
s
s
s
s
s
Guaranteed
low offset voltage
LT1002A
60µV max
LT1002
100µV max
Guaranteed
offset voltage match
LT1002A
40µV max
LT1002
80µV max
Guaranteed
low drift
LT1002A
0.9µV/°C max
LT1002
1.3µV/°C max
Guaranteed
CMRR
LT1002A
110dB min
LT1002
110dB min
Guaranteed
channel separation
LT1002A
132dB min
LT1002
130dB min
Guaranteed
maching characteristics
Low noise 0.35µV p-p
APPLICATIONS
s
s
s
s
s
s
Thermocouple Amplifiers
Strain Gauge Amplifiers
Low level signal processing
Medical instrumentation
Precision dual limit threshold detection
Instrumentation amplifiers
Strain Gauge Signal Conditioner with Bridge Excitation
+15V
+15V
8.2k
2.0K*
4
4.99k*
100Ω 5W
+
1 2
LM329
/ LT1002
13 2k
IN4148
2N2219
REFERENCE OUT
TO MONITORING
A/D CONVERTER
3
NUMBER OF UNITS
–
3
350Ω BRIDGE
*
301k
10k
ZERO 2
+
LT1001
6
1µF
0 TO 10V
OUT
340k*
–
10
–
1 2
IN4148
/ LT1002
6
2N2907
2k
100Ω
5W
*RN60C FILM RESISTORS
–15V
GAIN
TRIM
1.1k*
11
+
1002 TA01
U
U
Distribution of Offset Voltage Match
70
60
50
40
30
20
10
V
S
=
±15V
T
A
= 25°C
287 UNITS TESTED
0
–100 –80 –60 –40 –20 0 20 40 60 80 100
INPUT OFFSET VOLTAGE MATCH (µV)
1002 TA02
1
LT1002
ABSOLUTE
MAXIMUM
RATINGS
Supply Voltage (Note 6).........................................
±22V
Differential Input Voltage ......................................
±30V
Input Voltage Equal to Supply Voltage
Output Short Circuit Duration ......................... Indefinite
Operating Temperature Range
LT1002AM/LT1002M ....................... – 55°C to 125°C
LT1002AC/LT1002C ............................... 0°C to 70°C
Storage Temperature Range
All Grades ......................................... – 65°C to 150°C
Lead Temperature (Soldering, 10 sec.)................. 300°C
PACKAGE/ORDER INFORMATION
TOP VIEW
NULL (A) 1
NULL (A) 2
–IN (A) 3
+IN (A) 4
V– (B) 5
OUT (B) 6
V+ (B) 7
J PACKAGE
14 PIN HERMETIC
–
14 V+ (A)
13 OUT (A)
A
+
ORDER
PART NO.
LT1002AMJ
LT1002MJ
LT1002ACJ
LT1002CJ
LT1002ACN
LT1002CN
12 V– (A)
+
B
–
11 +IN (B)
10 –IN (B)
9 NULL (B)
8 NULL (B)
OFFSET
VOLTAGE
MAX
at 25°C
60µV
100µV
60µV
100µV
60µV
100µV
N PACKAGE
14 PIN PLASTIC
NOTE:
Device may be operated even if insertion
is reversed; this is due to inherent symmetry of
pin locations of amplifiers A and B. (Note 6)
ELECTRICAL CHARACTERISTICS, I DIVIDUAL A PLIFIERS
V
S
=
±15V,
T
A
= 25°C, unless otherwise noted
SYMBOL
V
OS
∆V
OS
∆Time
I
OS
I
B
e
n
e
n
A
VOL
CMRR
PSRR
R
in
V
OUT
SR
GBW
P
d
PARAMETER
Input Offset Voltage
Long Term Input Offset Voltage
Stability
Input Offset Current
Input Bias Current
Input Noise Voltage
Input Noise Voltage Density
Large Signal Voltage Gain
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Input Resistance Differential Mode
Input Voltage Range
Maximum Output Voltage Swing
Slew Rate
Gain Bandwidth Product
Power Dissipation
per amplifier
R
L
≥
2kΩ
R
L
≥
1kΩ
R
L
≥
2kΩ (Note 4)
Note 4
No load
No load, V
S
=
±3V
0.1Hz to 10Hz (Note 2)
f
O
= 10Hz (Note 5)
f
O
= 1000Hz (Note 2)
R
L
≥
2kΩ, V
O
=
±12V
R
L
≥
1kΩ, V
O
=
±10V
V
CM
=
±13V
V
S
=
±3V
to
±18V
Note 4
400
250
110
108
20
±13
±13
±12
0.1
0.4
CONDITIONS
Note 1
Notes 2 and 3
LT1002AM/LT1002AC
MIN TYP
MAX
20
60
0.3
0.3
±0.6
0.35
10.3
9.6
800
500
126
123
100
±14
±14
±13.5
0.25
0.8
46
4
75
7
1.5
2.8
±3.0
0.7
20.0
11.5
350
220
110
105
13
±13
±13
±12
0.1
0.4
LT1002M/LT1002C
MIN
TYP
MAX
25
100
0.4
0.4
±0.7
0.38
10.5
9.8
800
500
126
123
80
±14
±14
±13.5
0.25
0.8
48
4
85
8
2.0
4.2
±4.5
0.75
20.0
12.0
UNITS
µV
µV/month
nA
nA
µV
p-p
nV√Hz
V/mV
dB
dB
MΩ
V
V
V/µs
MHz
mW
2
U
W
U
W
U
U
W W
W
LT1002
ELECTRICAL CHARACTERISTICS, I DIVIDUAL A PLIFIERS
V
S
=
±15V,
– 55°C
≤
T
A
≤
125°C, unless otherwise noted
SYMBOL
V
OS
∆V
OS
∆Temp
I
OS
I
B
A
VOL
CMRR
PSRR
V
OUT
P
d
PARAMETER
Input Offset Voltage
Average Input Offset Voltage Drift
Input Offset Current
Input Bias Current
Large Signal Voltage Gain
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Input Voltage Range
Output Voltage Swing
Power Dissipation
per amplifier
R
L
≥
2kΩ
No load
R
L
≥
2kΩ, V
O
=
±10V
V
CM
=
±13V
V
S
=
±3V
to
±18V
CONDITIONS
Note 1
MIN
q
q
q
q
q
q
q
q
q
q
LT1002AM
TYP
MAX
30
150
0.2
0.8
±1.0
0.9
5.6
±6.0
300
106
102
±13
±12.5 ±13.5
55
90
V
S
=
±15V,
0°C
≤
T
A
≤
70°C, unless otherwise noted
SYMBOL
V
OS
∆V
OS
∆Temp
I
OS
I
B
A
VOL
CMRR
PSRR
V
OUT
P
d
PARAMETER
Input Offset Voltage
Average Input Offset Voltage Drift
Input Offset Current
Input Bias Current
Large Signal Voltage Gain
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Input Voltage Range
Output Voltage Swing
Power Dissipation
per amplifier
R
L
≥
2kΩ
No Load
R
L
≥
2kΩ, V
O
=
±10V
V
CM
=
±13V
V
S
=
±3V
to
±18V
CONDITIONS
Note 1
LT1002AC
MIN TYP
MAX
20
100
0.2
0.5
±0.7
350
108
105
±13
750
124
120
±14
50
85
0.9
4.2
±4.5
250
106
100
±13
±12.5
LT1002C
MIN
TYP
MAX
30
160
0.3
0.6
±1.0
750
123
120
±14
±13.8
55
90
1.3
5.7
±6.0
UNITS
µV
µV/°C
nA
nA
V/mV
dB
dB
V
V
mW
q
q
q
q
q
q
q
q
q
q
±12.5 ±13.8
The
q
denotes the specifications which apply over the full operating
temperature range.
For MIL-STD components, please refer to LTC 883C data sheet for test
listing and parameters.
Note 1:
Offset voltage measured with high speed test equipment,
approximately 1second after power is applied.
Note 2:
This parameter is tested on a sample basis only.
Note 3:
Long Term Input Offset Voltage Stability refers to the averaged
trend line of V
OS
versus Time over extended periods after the first 30 days
of operation. Excluding the initial hour of operation, changes in V
OS
during
the first 30 operating days are typically 2.5µV.
Note 4:
Parameter is guaranteed by design.
Note 5:
10Hz noise voltage density is sample tested on every lot.
Devices 100% tested at 10Hz are available on request.
Note 6:
The V + supply terminals are completely independent and may be
powered by separate supplies if desired (this approach, however, would
sacrifice the advantages of the power supply rejection ratio matching). The
V – supply terminals are both connected to the common substrate and
must be tied to the same voltage. Both V – pins should be used.
W
±14
U
MIN
LT1002M
TYP
MAX
45
230
0.3
1.2
±1.5
1.3
8.5
±9.0
UNITS
µV
µV/°C
nA
nA
V/mV
dB
dB
V
V
700
122
117
200
104
96
±13
±12.0
700
120
117
±14
±13.5
60
100
mW
3
LT1002
ATCHI G CHARACTERISTICS
at V
S
=
±15V,
T
A
= 25°C, unless otherwise noted
PARAMETER
Input Offset Voltage Match
Average Non-Inverting Bias
Current
Non-Inverting Offset Current
Inverting Offset Current
Common Mode Rejection Ratio
Match
Power Supply Rejection Ratio
Match
Channel Seperation
V
CM
=
±13V
V
S
=
±3V
to
±18V
f
≤
10Hz (Note 4)
CONDITIONS
LT1002AM/AC
MIN TYP
MAX
–
15
40
–
–
–
110
108
132
±0.6
0.6
0.6
132
130
148
±3.5
3.5
3.5
–
–
–
LT1002M/C
MIN
TYP
MAX
–
25
80
–
–
–
108
102
130
±0.7
0.7
0.7
132
128
146
±4.8
6.0
6.0
–
–
–
UNITS
µV
nA
nA
nA
dB
dB
dB
SYMBOL
I
B+
I
OS+
I
OS–
∆CMRR
∆PSRR
ATCHI G CHARACTERISTICS
at V
S
=
±15V,
– 55°C
≤
T
A
≤
125°C, unless otherwise noted
PARAMETER
Input Offset Voltage Match
Input Offset Voltage Tracking
Average Non-Inverting Bias
Current
Non-Inverting Offset Current
Inverting Offset Current
Common Mode Rejection Ratio
Match
Power Supply Rejection Ratio
Match
V
CM
=
±13V
V
S
=
±3V
to
±18V
CONDITIONS
q
q
q
q
q
q
q
SYMBOL
I
B
+
I
OS+
I
OS–
∆CMRR
∆PSRR
ATCHI G CHARACTERISTICS
at V
S
=
±15V,
0°C
≤
T
A
≤
70°C, unless otherwise noted
PARAMETER
Input Offset Voltage Match
Input Offset Voltage Tracking
Average Non-Inverting Bias
Current
Non-Inverting Offset Current
Inverting Offset Current
Common Mode Rejection Ratio
Match
Power Supply Rejection Ratio
Match
V
CM
=
±13V
V
S
=
±3V
to
±18V
CONDITIONS
q
q
q
q
q
q
q
SYMBOL
I
B
+
I
OS+
I
OS–
∆CMRR
∆PSRR
4
U
U
U
W
W
W
LT1002AM
MIN TYP
MAX
–
50
140
–
–
–
–
106
102
0.3
±1.5
1.5
1.5
126
122
1.0
±6.0
6.5
6.5
LT1002M
MIN
TYP
MAX
–
60
230
–
–
–
–
102
94
0.4
±1.8
1.8
1.8
124
120
1.5
±10.0
12.0
12.0
–
–
UNITS
µV
µV/°C
nA
nA
nA
dB
dB
LT1002AC
MIN TYP
MAX
–
30
85
–
–
–
–
108
105
0.3
±1.0
1.0
1.0
130
126
1.0
±4.5
5.0
5.0
–
–
LT1002C
MIN
TYP
MAX
–
45
150
–
–
–
–
105
98
0.4
±1.2
1.2
1.2
128
124
1.5
±7.0
8.5
8.5
–
–
UNITS
µV
µV/°C
nA
nA
nA
dB
dB
LT1002
TYPICAL PERFORMANCE CHARACTERISTICS
Distribution of Offset Voltage of
Individual Amplifiers
100
V
S
=
±15V
T
A
= 25°C
574 UNITS TESTED
NUMBER OF UNITS
80
NUMBER OF UNITS
60
40
30
20
10
NUMBER OF UNITS
40
20
0
–100 –80 –60 –40 –20 0 20 40 60 80 100
INPUT OFFSET VOLTAGE (µV)
1002 G01
Offset Voltage Drift with Temperature
of Six Representative Units
INDIVIDUAL AMPLIFIER OFFSET VOLTAGE (µV)
80
OFFSET VOLTAGE MATCH (µV)
80
V
S
=
±15V
LT1002M
LT1002AM
LT1
M
002A
CHANGE IN OFFSET VOLTAGE (MICROVOLTS)
100
60
40
20
0
–20
–40
–60
–80
–100
–50
–25
LT1002M
2AM
LT100
LT1002M
LT1002AM
02A
LT10
M
LT1002M
50
25
0
75
TEMPERATURE (°C)
Long Term Stability of Four
Representative Units
10
OFFSET VOLTAGE CHANGE (µV)
VOLTAGE NOISE nV/√Hz
30
1/f CORNER
4Hz
VOLTAGE
3
0
10
1
–5
3
1/f CORNER
70Hz
CURRENT
0.3
–10
0
1
3
2
TIME (MONTHS)
4
5
1001 G07
0
2
6
4
TIME (SECONDS)
8
10
1001 G08
1
1
10
100
FREQUENCY (Hz)
0.1
1000
1002 G09
5
CURRENT NOISE pA/√Hz
5
NOISE VOLTAGE 100nV/DIV
U W
100
1002 G04
Distribution of Offset Voltage Drift
with Temperature
(Individual Amplifiers)
70
60
260 UNITS TESTED
50
25
20
15
10
5
V
S
=
±15V
35
30
Distribution of Offset Voltage
Match Drift with Temperature
V
S
=
±15V
130 UNITS TESTED
0
–1.2
0
+0.4 +0.8 +1.2
–0.8 –0.4
INPUT OFFSET VOLTAGE DRIFT
WITH TEMPERATURE (µV/°C)
1002 G02
–1.2
0
+0.4 +0.8 +1.2
–0.8 –0.4
OFFSET VOLTAGE MATCH DRIFT
WITH TEMPERATURE (µV/°C)
1002 G03
Offset Voltage Tracking with Temperature
of Six Representative Units
100
Warm-Up Drift
5
V
S
=
±15V
T
A
= 25°C
N14 PLASTIC PACKGE
60
40
20
0
–20
–40
–60
–80
4
3
J14 HERMETIC DIP PACKGE
2
LT10
02M
LT1002AM
LT1002M
1
125
–100
–50
0
0
3
4
2
TIME AFTER POWER ON –
BOTH AMPLIFIERS (MINUTES)
1
5
1002 G06
–25
50
25
0
75
TEMPERATURE (°C)
100
125
1002 G04
0.1Hz to 10Hz Noise
100
Noise Spectrum
10
T
A
= 25°C
V
S
=
±3
TO
±18V
单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
