IC,BUFFER/DRIVER,DUAL,4-BIT,ACT-CMOS,FP,20PIN,CERAMIC
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 包装说明 | DFP, FL20,.3 |
| Reach Compliance Code | compliant |
| 控制类型 | ENABLE LOW/HIGH |
| JESD-30 代码 | R-XDFP-F20 |
| JESD-609代码 | e0 |
| 负载电容（CL） | 50 pF |
| 逻辑集成电路类型 | BUS DRIVER |
| 最大I（ol） | 0.024 A |
| 湿度敏感等级 | 1 |
| 位数 | 4 |
| 功能数量 | 2 |
| 端子数量 | 20 |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 输出特性 | 3-STATE |
| 输出极性 | TRUE |
| 封装主体材料 | CERAMIC |
| 封装代码 | DFP |
| 封装等效代码 | FL20,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLATPACK |
| 电源 | 5 V |
| Prop。Delay @ Nom-Sup | 10 ns |
| 认证状态 | Not Qualified |
| 筛选级别 | 38535V;38534K;883S |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn63Pb37) |
| 端子形式 | FLAT |
| 端子节距 | 1.27 mm |
| 端子位置 | DUAL |
| Base Number Matches | 1 |
| 54ACT241W-QMLV | 54ACT241J-QMLV | 54ACT241E-QMLV | 54ACT241DMQB | 54ACT241LMQB | |
|---|---|---|---|---|---|
| 描述 | IC,BUFFER/DRIVER,DUAL,4-BIT,ACT-CMOS,FP,20PIN,CERAMIC | IC,BUFFER/DRIVER,DUAL,4-BIT,ACT-CMOS,DIP,20PIN,CERAMIC | IC,BUFFER/DRIVER,DUAL,4-BIT,ACT-CMOS,LLCC,20PIN,CERAMIC | ACT SERIES, DUAL 4-BIT DRIVER, TRUE OUTPUT, CDIP20, CERAMIC, DIP-20 | ACT SERIES, DUAL 4-BIT DRIVER, TRUE OUTPUT, CQCC20, CERAMIC, LCC-20 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 包装说明 | DFP, FL20,.3 | DIP, DIP20,.3 | QCCN, LCC20,.35SQ | DIP, DIP20,.3 | QCCN, LCC20,.35SQ |
| Reach Compliance Code | compliant | compli | compli | unknown | unknown |
| 控制类型 | ENABLE LOW/HIGH | ENABLE LOW/HIGH | ENABLE LOW/HIGH | ENABLE LOW/HIGH | ENABLE LOW/HIGH |
| JESD-30 代码 | R-XDFP-F20 | R-XDIP-T20 | S-XQCC-N20 | R-GDIP-T20 | S-CQCC-N20 |
| 负载电容（CL） | 50 pF | 50 pF | 50 pF | 50 pF | 50 pF |
| 逻辑集成电路类型 | BUS DRIVER | BUS DRIVER | BUS DRIVER | BUS DRIVER | BUS DRIVER |
| 最大I（ol） | 0.024 A | 0.024 A | 0.024 A | 0.024 A | 0.024 A |
| 位数 | 4 | 4 | 4 | 4 | 4 |
| 功能数量 | 2 | 2 | 2 | 2 | 2 |
| 端子数量 | 20 | 20 | 20 | 20 | 20 |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 输出极性 | TRUE | TRUE | TRUE | TRUE | TRUE |
| 封装主体材料 | CERAMIC | CERAMIC | CERAMIC | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DFP | DIP | QCCN | DIP | QCCN |
| 封装等效代码 | FL20,.3 | DIP20,.3 | LCC20,.35SQ | DIP20,.3 | LCC20,.35SQ |
| 封装形状 | RECTANGULAR | RECTANGULAR | SQUARE | RECTANGULAR | SQUARE |
| 封装形式 | FLATPACK | IN-LINE | CHIP CARRIER | IN-LINE | CHIP CARRIER |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 筛选级别 | 38535V;38534K;883S | 38535V;38534K;883S | 38535V;38534K;883S | MIL-STD-883 Class B | MIL-STD-883 Class B |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | YES | NO | YES | NO | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子形式 | FLAT | THROUGH-HOLE | NO LEAD | THROUGH-HOLE | NO LEAD |
| 端子节距 | 1.27 mm | 2.54 mm | 1.27 mm | 2.54 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | QUAD | DUAL | QUAD |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 |
| JESD-609代码 | e0 | e0 | - | e0 | e0 |
| Prop。Delay @ Nom-Sup | 10 ns | - | - | 10 ns | 10 ns |
| 端子面层 | Tin/Lead (Sn63Pb37) | Tin/Lead (Sn63Pb37) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
嵌入式系统
stm32/stm8
DSP 与 ARM 处理器
TI技术论坛
为我们提建议&公告
DIY/开源硬件专区
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
