CAT93C46
(Die Rev. L)
1K-Bit Microwire Serial EEPROM
FEATURES
I
High speed operation: 1MHz
I
Low power CMOS technology
I
1.8 to 6.0 volt operation
I
Selectable x8 or x16 memory organization
I
Self-timed write cycle with auto-clear
I
Hardware and software write protection
H
GEN
FR
ALO
EE
LE
A
D
F
R
E
E
TM
I
Power-up inadvertant write protection
I
1,000,000 Program/erase cycles
I
100 year data retention
I
Commercial, industrial and automotive
temperature ranges
I
“Green” package option available
DESCRIPTION
The CAT93C46 is a 1K-bit Serial EEPROM memory
device which is configured as either registers of 16 bits
(ORG pin at V
CC
) or 8 bits (ORG pin at GND). Each
register can be written (or read) serially by using the
DI (or DO) pin. The CAT93C46 is manufactured using
PIN CONFIGURATION
DIP Package (P, L)
CS
SK
DI
DO
1
2
3
4
8
7
6
5
VCC
NC
ORG
GND
SOIC Package (J,W)
NC
VCC
CS
SK
1
2
3
4
8
7
6
5
SOIC Package (S,V)
CS
SK
DI
DO
i
D
1
2
3
4
8
7
6
5
CS
SK
DI
1
2
3
4
DO
TSSOP Package (U,Y)
8
7
6
5
VCC
NC
ORG
GND
c
s
VCC
NC
ORG
GND
CS
SK
DI
DO
SOIC Package (K,X)
1
2
3
4
8
7
6
5
i
t
n
o
ORG
GND
DO
DI
VCC
NC
ORG
GND
u
n
CS
SK
DI
DO
V
CC
GND
ORG
NC
Catalyst’s advanced CMOS EEPROM floating gate
technology. The device is designed to endure 1,000,000
program/erase cycles and has a data retention of 100
years. The device is available in 8-pin DIP, 8-pin SOIC,
8-pin TSSOP and 8-pad TDFN packages.
FUNCTIONAL SYMBOL
V
CC
d
e
SK
a
P
t
r
ORG
CS
DI
DO
NC
GND
PIN FUNCTIONS
Pin Name
Function
Chip Select
Clock Input
Serial Data Input
Serial Data Output
+1.8 to 6.0V Power Supply
Ground
Memory Organization
No Connection
TDFN Package (RD4, ZD4)
VCC
8
NC
7
ORG
6
GND
5
1
CS
2
SK
3
DI
4
DO
Bottom View
Note: When the ORG pin is connected to VCC, the x16 organiza-
tion is selected. When it is connected to ground, the x8 pin is
selected. If the ORG pin is left unconnected, then an internal pullup
device will select the x16 organization.
© 2004 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice.
Doc. No. 1086, Rev. L
CAT93C46
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias .................. -55°C to +125°C
Storage Temperature ........................ -65°C to +150°C
Voltage on any Pin with
Respect to Ground
(1)
............. -2.0V to +V
CC
+2.0V
V
CC
with Respect to Ground ................ -2.0V to +7.0V
Package Power Dissipation
Capability (T
A
= 25°C) ................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300°C
Output Short Circuit Current
(2)
........................ 100 mA
RELIABILITY CHARACTERISTICS
Symbol
N
END(3)
T
DR(3)
V
ZAP(3)
I
LTH(3)(4)
Parameter
Endurance
Data Retention
ESD Susceptibility
Latch-Up
Reference Test Method
MIL-STD-883, Test Method 1033
MIL-STD-883, Test Method 1008
MIL-STD-883, Test Method 3015
JEDEC Standard 17
Min
1,000,000
100
2000
100
Typ
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation of
the device at these or any other conditions outside of those
listed in the operational sections of this specification is not
implied. Exposure to any absolute maximum rating for
extended periods may affect device performance and
reliability.
D.C. OPERATING CHARACTERISTICS
V
CC
= +1.8V to +6.0V, unless otherwise specified.
Symbol
I
CC1
I
CC2
I
SB1
I
SB2
I
LI
I
LO
V
IL1
V
IH1
V
IL2
V
IH2
V
OL1
V
OH1
V
OL2
V
OH2
Parameter
Power Supply Current
(Write)
Power Supply Current
(Read)
Power Supply Current
(Standby) (x8 Mode)
Test Conditions
Power Supply Current
(Standby) (x16Mode)
Input Leakage Current
Output Leakage Current
(Including ORG pin)
Input Low Voltage
i
D
Input High Voltage
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
c
s
i
t
n
o
f
SK
= 1MHz
V
CC
= 5.0V
f
SK
= 1MHz
V
CC
= 5.0V
CS = 0V
ORG=GND
CS=0V
ORG=Float or V
CC
V
IN
= 0V to V
CC
u
n
Min
d
e
Typ
0
a
P
Max
Max
3
500
10
10
1
1
0.8
V
CC
+ 1
V
CC
x 0.2
V
CC
+1
0.4
Units
Cycles/Byte
Years
Volts
mA
t
r
Units
mA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
OUT
= 0V to V
CC
,
CS = 0V
-0.1
2
0
V
CC
x 0.7
4.5V
≤
V
CC
< 5.5V
1.8V
≤
V
CC
< 4.5V
4.5V
≤
V
CC
< 5.5V
I
OL
= 2.1mA
4.5V
≤
V
CC
< 5.5V
I
OH
= -400µA
1.8V
≤
V
CC
< 4.5V
I
OL
= 1mA
1.8V
≤
V
CC
< 4.5V
I
OH
= -100µA
4.5V
≤
V
CC
< 5.5V
1.8V
≤
V
CC
< 4.5V
2.4
0.2
V
CC
- 0.2
V
V
Output High Voltage
Note:
(1) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is V
CC
+0.5V, which may overshoot to V
CC
+2.0V for periods of less than 20 ns.
(2) Output shorted for no more than one second. No more than one output shorted at a time.
(3) This parameter is tested initially and after a design or process change that affects the parameter.
(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from –1V to V
CC
+1V.
Doc. No. 1086, Rev. L
2
CAT93C46
PIN CAPACITANCE
Symbol
C
OUT(1)
C
IN(1)
Test
Output Capacitance (DO)
Input Capacitance (CS, SK, DI, ORG)
Conditions
V
OUT
=0V
V
IN
=0V
Min
Typ
Max
5
5
Units
pF
pF
INSTRUCTION SET
Address
Instruction
READ
ERASE
WRITE
EWEN
EWDS
ERAL
WR A L
Start Bit
1
1
1
1
1
1
1
Opcode
10
11
01
00
00
00
00
x8
A6-A0
A6-A0
A6-A0
11XXXXX
00XXXXX
10XXXXX
01XXXXX
Data
x8
x1 6
x16
A5-A0
A5-A0
A5-A0
11XXXX
00XXXX
10XXXX
01XXXX
Comments
Read Address AN– A0
D7-D0
D15-D0
Clear Address AN– A0
Write Address AN– A0
Write Enable
Write Disable
D7-D0
A.C. CHARACTERISTICS
Symbol
t
CSS
t
CSH
t
DIS
t
DIH
t
PD1
t
PD0
Parameter
CS Setup Time
CS Hold Time
DI Setup Time
t
HZ(1)
t
EW
t
CSMIN
t
SKHI
t
SKLOW
t
SV
SK
MAX
i
D
DI Hold Time
Output Delay to 1
Output Delay to 0
Output Delay to High-Z
Program/Erase Pulse Width
Minimum CS Low Time
Minimum SK High Time
Minimum SK Low Time
Output Delay to Status Valid
Maximum Clock Frequency
c
s
i
t
n
o
(3)
Test
Conditions
u
n
V
CC
=
1.8V-6V
Min
200
0
400
400
1
1
10
1
1
1
1
DC
d
e
D15-D0
Limits
V
CC
=
2.5V-6V
Min
100
0
200
200
0.5
0.5
10
0.5
0.5
0.5
0.5
DC
Clear All Addresses
Write All Addresses
a
P
V
CC
=
4.5V-5.5V
Min
50
0
100
100
0.25
0.25
100
10
0.25
0.25
0.25
0.25
DC
1000
Max
t
r
Units
ns
ns
ns
ns
µs
µs
ns
ms
µs
µs
µs
µs
kHz
Max
Max
C
L
= 100pF
400
200
250
500
3
Doc. No. 1086, Rev. L
CAT93C46
POWER-UP TIMING
(1)(2)
Symbol
t
PUR
t
PUW
Parameter
Power-up to Read Operation
Power-up to Write Operation
Max
1
1
Units
ms
ms
A.C. TEST CONDITIONS
Input Rise and Fall Times
Input Pulse Voltages
Timing Reference Voltages
Input Pulse Voltages
Timing Reference Voltages
≤
50ns
0.4V to 2.4V
0.8V, 2.0V
0.2V
CC
to 0.7V
CC
0.5V
CC
4.5V
≤
V
CC
≤
5.5V
4.5V
≤
V
CC
≤
5.5V
1.8V
≤
V
CC
≤
4.5V
1.8V
≤
V
CC
≤
4.5V
NOTE:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) t
PUR
and t
PUW
are the delays required from the time V
CC
is stable until the specified operation can be initiated.
(3) The input levels and timing reference points are shown in “AC Test Conditions” table.
DEVICE OPERATION
The CAT93C46 is a 1024-bit nonvolatile memory in-
tended for use with industry standard microprocessors.
The CAT93C46 can be organized as either registers of
16 bits or 8 bits. When organized as X16, seven 9-bit
instructions control the reading, writing and erase opera-
tions of the device. When organized as X8, seven 10-bit
instructions control the reading, writing and erase
operations of the device. The CAT93C46 operates on
a single power supply and will generate on chip, the high
voltage required during any write operation.
Instructions, addresses, and write data are clocked into
the DI pin on the rising edge of the clock (SK). The DO
pin is normally in a high impedance state except when
reading data from the device, or when checking the
ready/busy status after a write operation.
The ready/busy status can be determined after the start
of a write operation by selecting the device (CS high) and
polling the DO pin; DO low indicates that the write
operation is not completed, while DO high indicates that
the device is ready for the next instruction. If necessary,
the DO pin may be placed back into a high impedance
state during chip select by shifting a dummy “1” into the
DI pin. The DO pin will enter the high impedance state on
the falling edge of the clock (SK). Placing the DO pin into
the high impedance state is recommended in applica-
tions where the DI pin and the DO pin are to be tied
together to form a common DI/O pin.
i
D
c
s
i
t
n
o
u
n
Read
Write
The format for all instructions sent to the device is a
logical "1" start bit, a 2-bit (or 4-bit) opcode, 6-bit address
(an additional bit when organized X8) and for write
operations a 16-bit data field (8-bit for X8 organizations).
d
e
a
P
t
r
Upon receiving a READ command and an address
(clocked into the DI pin), the DO pin of the CAT93C46 will
come out of the high impedance state and, after sending
an initial dummy zero bit, will begin shifting out the data
addressed (MSB first). The output data bits will toggle on
the rising edge of the SK clock and are stable after the
specified time delay (t
PD0
or t
PD1
).
After receiving a WRITE command, address and the
data, the CS (Chip Select) pin must be deselected for a
minimum of t
CSMIN
. The falling edge of CS will start the
self clocking clear and data store cycle of the memory
location specified in the instruction. The clocking of the
SK pin is not necessary after the device has entered the
self clocking mode. The ready/busy status of the
CAT93C46 can be determined by selecting the device
and polling the DO pin. Since this device features Auto-
Clear before write, it is NOT necessary to erase a
memory location before it is written into.
Doc. No. 1086, Rev. L
4
CAT93C46
Figure 1. Sychronous Data Timing
tSKHI
SK
tDIS
DI
tCSS
CS
tDIS
DO
tPD0,tPD1
DATA VALID
VALID
VALID
tDIH
tSKLOW
tCSH
Figure 2. Read Instruction Timing
SK
CS
AN
DI
1
1
0
DO
HIGH-Z
Figure 3. Write Instruction Timing
SK
CS
i
D
1
c
s
0
1
i
t
n
o
AN—1
tPD0
A0
u
n
0
DN
d
e
D1
D0
a
P
tCSMIN
STANDBY
tHZ
t
r
tCSMIN
HIGH-Z
DN—
1
tCSMIN
STATUS
VERIFY
AN
AN-1
A0
DN
D0
STANDBY
DI
tSV
DO
HIGH-Z
tEW
BUSY
READY
tHZ
HIGH-Z
5
Doc. No. 1086, Rev. L
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
