LT1055/LT1056
Precision, High Speed,
JFET Input Operational Amplifiers
FEATURES
s
s
s
DESCRIPTION
150µV Max
500µV Max
4µV/°C Max
150pA Max
2.5nA Max
12V/µs Min
The LT1055/LT1056 JFET input operational amplifiers
combine precision specifications with high speed perfor-
mance.
For the first time, 16V/µs slew rate and 6.5MHz gain-ban-
width product are simultaneously achieved with offset
voltage of typically 50µV, 1.2µV/°C drift, bias currents of
40pA at 70°C and 500pA at 125°C.
The 150µV maximum offset voltage specification is the
best available on any JFET input operational amplifier.
The LT1055 and LT1056 are differentiated by their operat-
ing currents. The lower power dissipation LT1055 achieves
lower bias and offset currents and offset voltage. The
additional power dissipation of the LT1056 permits higher
slew rate, bandwidth and faster settling time with a slight
sacrifice in DC performance.
The voltage-to-frequency converter shown below is one of
the many applications which utilize both the precision and
high speed of the LT1055/LT1056.
For a JFET input op amp with 23V/µs guaranteed slew rate,
refer to the LT1022 data sheet.
and LTC are registered trademarks and LT is a trademark of Linear Technology Corporation.
s
Guaranteed
Offset Voltage
–55°C to 125°C
Guaranteed
Drift
Guaranteed
Bias Current
70°C
125°C
Guaranteed
Slew Rate
APPLICATIONS
s
s
s
s
s
s
s
Precision, High Speed Instrumentation
Logarithmic Amplifiers
D/A Output Amplifiers
Photodiode Amplifiers
Voltage-to-Frequency Converters
Frequency-to-Voltage Converters
Fast, Precision Sample-and-Hold
TYPICAL APPLICATION
0kHz to 10kHz Voltage-to-Frequency Converter
4.7k
15V
3M
140
0.001 (POLYSTYRENE)
10kHZ
TRIM
5k
OUTPUT
1Hz TO 10kHz
0.005%
LINEARITY
120
NUMBER OF UNITS
100
80
60
40
20
0.1µF
0
–15V
THE LOW OFFSET VOLTAGE OF LT1056
CONTRIBUTES ONLY 0.1Hz OF ERROR
WHILE ITS HIGH SLEW RATE PERMITS
10kHz OPERATION.
–400
–200
200
400
0
INPUT OFFSET VOLTAGE (µV)
LT1055/56 TA02
LT1055/56 TA01
0V TO 10V
INPUT
2
+
–
33pF
15V
7
LT1056
6
4
–15V
1.5k
0.1µF
22k
3
3.3M
2N3906
= 1N4148
*1% FILM
LM329
U
U
U
Distribution of Input Offset Voltage
(H Package)
V
S
=
±15V
T
A
= 25°C
634 UNITS TESTED
FROM THREE RUNS
50% TO
±60µV
1
LT1055/LT1056
ABSOLUTE
MAXIMUM
RATINGS
Supply Voltage ......................................................
±20V
Differential Input Voltage .......................................
±40V
Input Voltage .........................................................
±20V
Output Short-Circuit Duration .......................... Indefinite
Operating Temperature Range
LT1055AM/LT1055M/LT1056AM/
LT1056M ......................................... –55°C to 125°C
LT1055AC/LT1055C/LT1056AC/
LT1056C ................................................ 0°C to 70°C
Storage Temperature Range
All Devices ...................................... – 65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
PACKAGE/ORDER INFORMATION
TOP VIEW
NC
8
BALANCE 1
–IN 2
+IN
3
7
V
+
6 OUT
ORDER PART
NUMBER
LT1055ACH
LT1055CH
LT1055AMH
LT1055MH
LT1056ACH
LT1056CH
LT1056AMH
LT1056MH
5 BALANCE
4
V
–
H PACKAGE
8-LEAD TO-5 METAL CAN
T
JMAX
= 150°C,
θ
JA
= 150°C/ W,
θ
JC
= 45°C/ W
TOP VIEW
BAL 1
–IN 2
+IN
3
V
–
8
7
6
5
N/C
V
+
OUT
BAL
LT1055CN8
LT1056CN8
4
N8 PACKAGE
8-LEAD PLASTIC DIP
T
JMAX
= 100°C,
θ
JA
= 130°C/ W
Consult factory for Industrial grade parts.
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
V
OS
Input Offset Voltage (Note1)
CONDITIONS
LT1055 H Package
LT1056 H Package
LT1055 N8 Package
LT1056 N8 Package
Fully Warmed Up
Fully Warmed Up
V
CM
= 10V
V
S
=
±15V,
T
A
= 25°C, V
CM
= 0V unless otherwise noted.
LT1055AM/LT1056AM
LT1055AC/LT1056AC
MIN
TYP
MAX
—
50
150
—
50
180
—
—
—
—
—
—
—
2
10
—
±10
±50
—
30
130
12
—
—
10
12
—
10
—
—
10
11
—
—
4
—
—
1.8
—
—
2.5
—
—
28
50
—
14
20
—
1.8
4
150
400
—
130
300
—
±11
±12
—
86
100
—
90
106
—
±12
±13.2
—
10
13
—
12
16
—
—
5.0
—
—
6.5
—
—
2.8
4.0
—
5.0
6.5
—
±5
—
LT1055M/LT1056M
LT1055CH/LT1056CH
LT1055CN8/LT1056CN8
MIN
TYP
MAX
—
70
400
—
70
450
—
120
700
—
140
800
—
2
20
—
±10
±50
—
30
150
12
—
10
—
12
—
10
—
—
10
11
—
—
4
—
—
2.0
—
—
2.8
—
—
30
60
—
15
22
—
1.8
4
120
400
—
100
300
—
±11
±12
—
83
98
—
88
104
—
±12
±13.2
—
7.5
12
—
9.0
14
—
—
4.5
—
—
5.5
—
—
2.8
4.0
—
5.0
7.0
—
±5
—
I
OS
I
B
Input Offset Current
Input Bias Current
e
n
I
n
A
VOL
CMRR
PSRR
V
OUT
SR
GBW
I
S
Input Resistance:Differential
Common Mode V
CM
= – 11V to 8V
V
CM
= 8V to 11V
Input Capacitance
Input Noise Voltage
0.1Hz to 10Hz LT1055
LT1056
Input Noise Voltage Density
f
0
= 10Hz (Note 2)
f
0
= 1kHz (Note 3)
Input Noise Current Density
f
0
= 10Hz, 1kHz (Note 4)
Large-Signal Voltage Gain
V
0
=
±10V
R
L
= 2k
R
L
= 1k
Input Voltage Range
Common-Mode Rejection Ratio
V
CM
=
±11V
Power Supply Rejection Ratio
V
S
=
±10V
to
±18V
Output Voltage Swing
R
L
= 2k
Slew Rate
LT1055
LT1056
Gain-Bandwidth Product
f = 1MHz
LT1055
LT1056
Supply Current
LT1055
LT1056
Offset Voltage Adjustment Range R
POT
= 100k
UNITS
µV
µV
µV
µV
pA
pA
pA
Ω
Ω
Ω
pF
µV
P-P
µV
P-P
nV/
√
Hz
nV/
√
Hz
fA/
√
Hz
V/mV
V/mV
V
dB
dB
V
V/µs
V/µs
MHz
MHz
mA
mA
mV
2
U
W
U
U
W W
W
LT1055/LT1056
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
V
OS
Input Offset Voltage (Note1)
CONDITIONS
LT1055 H Package
LT1056 H Package
LT1055 N8 Package
LT1056 N8 Package
H Package (Note 5)
N8 Package (Note 5)
V
S
=
±15V,
V
CM
= 0V, 0°C
≤
T
A
≤
70°C unless otherwise noted.
LT1055AC
LT1056AC
TYP
100
100
—
—
1.2
—
10
14
±30
±40
250
100
105
±13.1
LT1055CH/LT1056CH
LT1055CN8/LT1056CN8
MIN
TYP
MAX
—
140
750
—
140
800
—
250
1250
—
280
1350
—
1.6
8.0
—
3.0
12.0
—
—
—
—
60
82
87
±12
16
18
±40
±50
250
98
103
±13.1
80
100
±200
±240
—
—
—
—
q
q
q
q
q
q
q
q
q
q
q
q
q
q
I
OS
I
B
A
VOL
CMRR
PSRR
V
OUT
Average Temperature
Coefficient of Input Offset
Voltage
Input Offset Current
Input Bias Current
Large-Signal Voltage Gain
Common-Mode Rejection Ratio
Power Supply Rejection Ratio
Output Voltage Swing
MIN
—
—
—
—
—
—
—
—
—
—
80
85
89
±12
MAX
330
360
—
—
4.0
—
50
70
±150
±80
—
—
—
—
UNITS
µV
µV
µV
µV
µV/°C
µV/°C
pA
pA
pA
pA
V/mV
dB
dB
V
Warmed Up
LT1055
T
A
= 70°C
LT1056
Warmed Up
LT1055
T
A
= 70°C
LT1056
V
O
=
±10V,
R
L
= 2k
V
Cm
=
±10.5V
V
S
=
±10V
to
±18V
R
L
= 2k
V
S
=
±15V,
V
CM
= 0V, –55°C
≤
T
A
≤
125°C unless otherwise noted.
LT1055AM
LT1056AM
MIN
TYP
MAX
—
180
500
—
180
550
—
1.3
4.0
LT1055M
LT1056M
TYP
MAX
250
1200
250
1250
1.8
8.0
SYMBOL PARAMETER
V
OS
Input Offset Voltage (Note1)
Average Temperature
Coefficient of Input Offset
Voltage
Input Offset Current
Input Bias Current
Large-Signal Voltage Gain
Common-Mode Rejection Ratio
Power Supply Rejection Ratio
Output Voltage Swing
CONDITIONS
LT1055
LT1056
(Note 5)
q
q
q
MIN
—
—
—
UNITS
µV
µV
µV/°C
I
OS
I
B
A
VOL
CMRR
PSRR
V
OUT
Warmed Up
LT1055
T
A
= 125°C
LT1056
Warmed Up
LT1055
T
A
= 125°C
LT1056
V
O
=
±10V,
R
L
= 2k
V
CM
=
±10.5V
V
S
=
±10V
to
±17V
R
L
= 2k
q
q
q
q
q
q
q
q
—
—
—
—
40
85
88
±12
0.20
0.25
±0.4
±0.5
120
100
104
±12.9
1.2
1.5
±2.5
±3.0
—
—
—
—
—
—
—
—
35
82
86
±12
0.25
0.30
±0.5
±0.6
120
98
102
±12.9
1.8
2.4
±4.0
±5.0
—
—
—
—
nA
nA
nA
nA
V/mV
dB
dB
V
The
q
denotes specifications which apply over the full operating
temperature range.
For MIL-STD components, please refer to LTC883 data sheet for test
listing and parameters.
Note 1:
Offset voltage is measured under two different conditions:
(a) approximately 0.5 seconds after application of power; (b) at T
A
= 25°C
only, with the chip heated to approximately 38°C for the LT1055 and to
45°C for the LT1056, to account for chip temperature rise when the device
is fully warmed up.
Note 2:
10Hz noise voltage density is sample tested on every lot of A
grades. Devices 100% tested at 10Hz are available on request.
Note 3:
This parameter is tested on a sample basis only.
Note 4:
Current noise is calculated from the formula: i
n
= (2ql
B
)
1/2
, where
q = 1.6
×
10
–19
coulomb. The noise of source resistors up to 1GΩ
swamps the contribution of current noise.
Note 5: Offset voltage drift with temperature is practically unchanged when
the offset voltage is trimmed to zero with a 100k potentiometer between
the balance terminals and the wiper tied to V
+
. Devices tested to tighter
drift specifications are available on request.
3
LT1055/LT1056
TYPICAL PERFORMANCE CHARACTERISTICS
Input Bias and Offset Currents
vs Temperature
INPUT BIAS CURRENT, T
A
= 25°C, T
A
= 70°C (pA)
1000
INPUT BIAS AND OFFSET CURRENT (pA)
300
V
S
= ±15V
V
CM
= 0V
WARMED UP
BIAS OR OFFSET CURRENTS
MAY BE POSITIVE OR NEGATIVE
BIAS CURRENT
40
0
– 40
100
A
T
A
= 25°C
A
400
0
– 400
NUMBER OF INPUTS
30
10
OFFSET CURRENT
3
0
25
75
100
50
AMBIENT TEMPERATURE (°C)
Distribution of Offset Voltage Drift
with Temperature (H Package)*
140
120
CHANGE IN OFFSET VOLTAGE (µV)
80
OFFSET VOLTAGE CHANGE µV)
V
S
=
±15V
634 UNITS TESTED
FROM THREE RUNS
BATTERY VOLTAGE (V)
100
80
60
40
20
0
–10 –8 –6 –4 –2 0 2
4 6 8 10
OFFSET VOLTAGE DRIFT WITH TEMPERATURE (µV/°C)
*DISTRIBUTION IN THE PLASTIC (N8) PACKAGE
IS SIGNIFICANTLY WIDER.
0.1Hz to 10Hz Noise
0.1Hz TO 10Hz PEAK-TO-PEAK NOISE (µV/
P-P
)
10
7
5
NOISE VOLTAGE (1µV/DIVISION)
LT1056
70
PEAK-TO-PEAK
NOISE
50
RMS NOISE VOLTAGE DENSITY (nV/√Hz)
LT1055
0
2
6
4
TIME (SECONDS)
4
U W
LT1055/56 G01
Input Bias Current Over the
Common-Mode Range
120
V
S
= ±15V
WARMED UP
80
T
A
= 125°C
T
A
= 70°C
1200
Distribution of Input Offset
Voltage (N8 Package)
160
INPUT BIAS CURRENT, T
A
= 125°C (pA)
V
S
=
±15V
T
A
= 25°C
140
550 UNITS
TESTED FROM
120 TWO RUNS
(LT1056)
100
80
60
40
20
0
–800 –600 –400 –200 0 200 400 600 800
INPUT OFFSET VOLTAGE (µV)
LT1055/56 G03
800
50% YIELD
TO
±140µV
T
A
= 70°C
–80
B
B
T
A
= 125°C
–800
125
–120
–15
A = POSITIVE INPUT CURRENT
B = NEGATIVE INPUT CURRENT
15
–1200
–5
0
5
10
–10
COMMON-MODE INPUT VOLTAGE (V)
LT1055/56 G02
Warm-Up Drift
100
V
S
= ±15V
T
A
= 25°C
Long Term Drift of
Representative Units
50
40
30
20
10
0
–10
–20
–30
–40
–50
5
50% TO
±1.5µV/°C
V
S
= ±15V
T
A
= 25°C
60
LT1056CN8
40
LT1055CN8
LT1056 H PACKAGE
LT1055 H PACKAGE
0
0
1
3
4
2
TIME AFTER POWER ON (MINUTES)
20
0
1
3
2
TIME (MONTHS)
4
5
LT1055/56 G05
LT1055/56 GO6
LT1055/56 G04
Noise vs Chip Temperature
100
1000
Voltage Noise vs Frequency
V
S
= ±15V
T
A
= 25°C
RMS NOISE VOLTAGE DENSITY (nV/√Hz)
300
3
f
0
= 10kHz
2
f
0
= 1kHz
30
20
100
LT1056
1/f CORNER = 28HZ
30
LT1055
1/f CORNER
= 20HZ
10
1
3
10
100
30
FREQUENCY (Hz)
300
1000
1
10
20
30
50
60
40
CHIP TEMPERATURE (°C)
70
8
10
10
80
LT1055/56 GO7
LT1055/56 G08
LT1055/56 G09
LT1055/LT1056
TYPICAL PERFORMANCE CHARACTERISTICS
LT1056 Large-Signal Response
Small-Signal Response
LT1055 Large-Signal Response
5V/DIV
A
V
= 1, C
L
= 100pF, 0.5µs/DIV
LT1055/56 G10
20mV/DIV
5V/DIV
Undistorted Output Swing vs
Frequency
30
PEAK-TO-PEAK OUTPUT SWING (V)
V
S
= ±15V
T
A
= 25°C
24
SLEW RATE (V/µS)
20
LT1055 GBW
OUTPUT IMPEDANCE (Ω)
18
LT1055
12
LT1056
6
V
S
= ±15V
f
0
= 1MHz FOR GBW
–25
25
75
TEMPERATURE (˚C)
125
LT1055/56 G14
0
0.1
1
FREQUENCY (MHz)
Gain vs Frequency
140
120
100
GAIN (dB)
V
S
= ±15V
T
A
= 25°C
GAIN (dB)
80
60
LT1055
40
20
0
–20
LT1056
LT1055
10
GAIN
LT1056
120
VOLTAGE GAIN (V/mV)
1
10
100
1k 10k 100k 1M 10M 100M
FREQUENCY (Hz)
LT1055/56 G16
U W
LT1055/56 G13
A
V
= 1, C
L
= 100pF, 0.5µs/DIV
LT1055/56 G12
A
V
= 1, C
L
= 100pF, 0.2µs/DIV
LT1055/56 G11
Slew Rate, Gain-Bandwidth vs
Temperature
30
LT1056 GBW
10
Output Impedence vs Frequency
100
V
S
= ±15V
T
A
= 25°C
A
V
= 100
GAIN-BANDWIDTH PRODUCT (MHz)
8
6
4
LT1055
10
LT1055
1
LT1056
A
V
= 10
LT1056
10
LT1056 SLEW
LT1055 SLEW
2
LT1055
LT1056
A
V
= 1
0
0.1
1
10
100
FREQUENCY (kHz)
1000
LT1055/56 G15
10
Gain, Phase Shift vs Frequency
100
20
1000
Voltage Gain vs Temperature
R
L
= 2k
PHASE SHIFT (DEGREES)
V
S
= ±15V
V
O
= ±10V
PHASE
300
R
L
= 1k
100
140
LT1055
0
V
S
= ±15V
T
A
= 25°C
–10
1
4
2
FREQUENCY (MHz)
6
8 10
160
LT1056
30
10
–75
–25
25
75
TEMPERATURE (°C)
125
LT1055/56 G18
LT1055/56 G17
5
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