LT1158
Half Bridge N-Channel
Power MOSFET Driver
FEATURES
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DESCRIPTION
A single input pin on the LT1158 synchronously controls
two N-channel power MOSFETs in a totem pole configura-
tion. Unique adaptive protection against shoot-through
currents eliminates all matching requirements for the two
MOSFETs. This greatly eases the design of high efficiency
motor control and switching regulator systems.
A continuous current limit loop in the LT1158 regulates
short-circuit current in the top power MOSFET. Higher
start-up currents are allowed as long as the MOSFET V
DS
does not exceed 1.2V. By returning the fault output to the
enable input, the LT1158 will automatically shut down in
the event of a fault and retry when an internal pull-up
current has recharged the enable capacitor.
An on-chip charge pump is switched in when needed to
turn on the top N-channel MOSFET continuously. Special
circuitry ensures that the top side gate drive is safely
maintained in the transition between PWM and DC opera-
tion. The gate-to-source voltages are internally limited to
14.5V when operating at higher supply voltages.
Drives Gate of Top Side MOSFET Above V
+
Operates at Supply Voltages from 5V to 30V
150ns Transition Times Driving 3000pF
Over 500mA Peak Driver Current
Adaptive Non-Overlap Gate Drives
Continuous Current Limit Protection
Auto Shutdown and Retry Capability
Internal Charge Pump for DC Operation
Built-In Gate Voltage Protection
Compatible with Current-Sensing MOSFETs
TTL/CMOS Input Levels
Fault Output Indication
APPLICATIONS
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PWM of High Current Inductive Loads
Half Bridge and Full Bridge Motor Control
Synchronous Step-Down Switching Regulators
Three-Phase Brushless Motor Drive
High Current Transducer Drivers
Battery-Operated Logic-Level MOSFETs
TYPICAL APPLICATION
24V
1N4148
BOOST DR
BOOST
T GATE DR
T GATE FB
T SOURCE
0.1µF
IRFZ34
+
10µF
V
+
V
+
+
500µF
LOW
ESR
PWM
0Hz TO
100kHz
INPUT
LT1158
SENSE
+
+
R
SENSE
0.015Ω
LOAD
+
1µF
ENABLE
FAULT
BIAS
SENSE
–
B GATE DR
B GATE FB
GND
–
IRFZ34
0.01µF
LT1158 TA01
U
U
U
Top and Bottom Gate Waveforms
V
IN
= 24V
R
L
= 12Ω
1158 TA02
1
LT1158
ABSOLUTE
MAXIMUM
RATINGS
Supply Voltage (Pins 2, 10) .................................... 36V
Boost Voltage (Pin 16)............................................ 56V
Continuous Output Currents (Pins 1, 9, 15) ....... 100mA
Sense Voltages (Pins 11, 12)................... –5V to V
+
+5V
Top Source Voltage (Pin 13).................... –5V to V
+
+5V
Boost to Source Voltage (V16 – V13) ....... –0.3V to 20V
Operating Temperature Range
LT1158C ................................................ 0°C to 70°C
LT1158I ............................................ –40°C to 85°C
Junction Temperature (Note 1)
LT1158C .......................................................... 125°C
LT1158I ........................................................... 150°C
Storage Temperature Range ................ –65°C to 150°C
Lead Temperature (Soldering, 10 sec.)................ 300°C
PACKAGE/ORDER INFORMATION
TOP VIEW
BOOST DR
V
+
BIAS
ENABLE
FAULT
INPUT
GND
B GATE FB
1
2
3
4
5
6
7
8
16 BOOST
15 T GATE DR
14 T GATE FB
13 T SOURCE
12 SENSE
+
11 SENSE
–
10 V
+
9
B GATE DR
ORDER PART
NUMBER
LT1158CN
LT1158IN
N PACKAGE
16-LEAD PLASTIC DIP
θ
JA
= 70°C/W
TOP VIEW
BOOST DR 1
V
+
2
BIAS 3
ENABLE 4
FAULT 5
INPUT 6
GND 7
B GATE FB 8
16 BOOST
15 T GATE DR
14 T GATE FB
13 T SOURCE
12 SENSE
+
11 SENSE
–
10 V
+
9
S PACKAGE
16-LEAD PLASTIC SOL
B GATE DR
LT1158CS
LT1158IS
θ
JA
= 110°C/W
Consult factory for Military grade parts.
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
I
2
+ I
10
DC Supply Current (Note 2)
CONDITIONS
Test Circuit, T
A
= 25
°
C, V
+
= V16 = 12V, V11 = V12 = V13 = 0V, Pins 1 and 4
open, Gate Feedback pins connected to Gate Drive pins unless otherwise specified.
LT1158I
MIN TYP MAX
4.5
8
q
LT1158C
MIN TYP MAX
4.5
8
0.8
0.85
1.2
15
9
40
12
12
2.2
7
13
3
1.4
5
1.15
1.5
25
11
43
14.5
14.5
3
10
18
4.5
2
15
1.4
1.8
35
47
17
17
UNITS
mA
mA
mA
mA
V
µA
V
V
µA
V
V
V
V
V
+
= 30V, V16 = 15V, V4 = 0.5V
V
+
= 30V, V16 = 15V, V6 = 0.8V
V
+
= 30V, V16 = 15V, V6 = 2V
V
+
= V13 = 30V, V16 = 45V, V6 = 0.8V
2.2
7
13
3
1.4
5
1.15
1.5
25
11
43
14.5
14.5
3
10
18
4.5
2
15
1.4
1.7
35
47
17
17
I
16
V6
I
6
V4
∆V4
I
4
V15
V9
V1
Boost Current
Input Threshold
Input Current
Enable Low Threshold
Enable Hysteresis
Enable Pullup Current
Charge Pump Voltage
Bottom Gate “ON” Voltage
Boost Drive Voltage
0.8
0.9
1.3
15
9
40
12
12
V6 = 5V
V6 = 0.8V, Monitor V9
V6 = 0.8V, Monitor V9
V4 = 0V
V
+
= 5V, V6 = 2V, Pin 16 open, V13
→
5V
V
+
= 30V, V6 = 2V, Pin16 open, V13
→
30V
V
+
= V16 = 18V, V6 = 0.8V
V
+
= V16 = 18V, V6 = 0.8V, 100mA Pulsed Load
q
q
q
q
q
q
q
q
2
U
W
U
U
W W
W
LT1158
ELECTRICAL CHARACTERISTICS
SYMBOL
V8
I
5
V5
PARAMETER
Bottom Turn-Off Threshold
Fault Output Leakage
Fault Output Saturation
CONDITIONS
Test Circuit, T
A
= 25
°
C, V
+
= V16 = 12V, V11 = V12 = V13 = 0V, Pins 1 and 4
open, Gate Feedback pins connected to Gate Drive pins unless otherwise specified.
LT1158I
MIN TYP MAX
1
1
q
LT1158C
MIN TYP MAX
1
1
1.75
1.5
0.1
0.5
85
120
120
1.1
110
150
1.25
130
350
120
130
200
100
2.5
2
1
1
135
180
180
1.4
250
550
250
250
400
200
UNITS
V
V
µA
V
mV
mV
mV
V
ns
ns
ns
ns
ns
ns
V14 – V13 Top Turn-Off Threshold
V
+
= V16 = 5V, V6 = 0.8V
V
+
= V16 = 5V, V6 = 2V
V
+
= 30V, V16 = 15V, V6 = 2V
V
+
= 30V, V16 = 15V, V6 = 2V, I5 = 10mA
V = 30V, V16 = 15V, V6 = 2V, I5 = 100µA
V = 30V, V16 = 15V, V6 = 2V, Closed Loop
q
+
+
1.75
1.5
0.1
0.5
2.5
2
1
1
130
170
180
1.4
250
550
250
250
400
200
V12 – V11 Fault Conduction Threshold
V12 – V11 Current Limit Threshold
V12 – V11 Current Limit Inhibit
V
DS
Threshold
t
R
t
D
t
F
t
R
t
D
t
F
Top Gate Rise Time
Top Gate Turn-Off Delay
Top Gate Fall Time
Bottom Gate Rise Time
Bottom Gate Turn-Off Delay
Bottom Gate Fall Time
90
130
120
1.1
q
q
q
q
q
q
110
150
1.25
130
350
120
130
200
100
V = V12 = 12V, V6 = 2V, Decrease V11
until V15 goes low
Pin 6 (+) Transition, Meas. V15 – V13 (Note 3)
Pin 6 (–) Transition, Meas. V15 – V13 (Note 3)
Pin 6 (–) Transition, Meas. V15 – V13 (Note 3)
Pin 6 (–) Transition, Meas. V9 (Note 3)
Pin 6 (+) Transition, Meas. V9 (Note 3)
Pin 6 (+) Transition, Meas. V9 (Note 3)
+
The
q
denotes specifications that apply over the full operating temperature
range.
Note 1:
T
J
is calculated from the ambient temperature T
A
and power
dissipation P
D
according to the following formulas:
LT1158IN, LT1158CN: T
J
= T
A
+ (P
D
×
70°C/W)
LT1158IS, LT1158CS: T
J
= T
A
+ (P
D
×
110°C/W)
Note 2:
Dynamic supply current is higher due to the gate charge being
delivered at the switching frequency. See typical performance
characteristics and applications information.
Note 3:
Gate rise times are measured from 2V to 10V, delay times are
measured from the input transition to when the gate voltage has decreased
to 10V, and fall times are measured from 10V to 2V.
TYPICAL PERFORMANCE CHARACTERISTICS
DC Supply Current
14
I
2
+ I
10
+ I
16
12
INPUT HIGH
SUPPLY CURRENT (mA)
SUPPLY CURRENT (mA)
V13 = 0V
12
V13 = V
+
10
8
10
INPUT LOW
8
6
4
2
0
0
5
10
15 20 25 30
SUPPLY VOLTAGE (V)
35
40
ENABLE LOW
SUPPLY CURRENT (mA)
U W
LT1158 G01
DC Supply Current
14
I
2
+ I
10
+ I
16
V
+
= 12V
INPUT HIGH
30
25
20
15
10
5
0
Dynamic Supply Current (V
+
)
50% DUTY CYCLE
C
GATE
= 3000pF
V
+
= 24V
V
+
= 12V
V
+
= 6V
INPUT LOW
6
4
2
0
–50 –25
ENABLE LOW
50
25
75
0
TEMPERATURE (°C)
100
125
1
10
INPUT FREQUENCY (kHz)
100
LT1158 G03
LT1158
G02
3
LT1158
TYPICAL PERFORMANCE CHARACTERISTICS
Dynamic Supply Current
40
35
50% DUTY CYCLE
V
+
= 12V
TOP GATE VOLTAGE (V)
INPUT THRESHOLD VOLTAGE (V)
SUPPLY CURRENT (mA)
30
25
20
15
10
5
0
1
10
INPUT FREQUENCY (kHz)
100
LT1158 G04
C
GATE
= 10000pF
C
GATE
= 3000pF
C
GATE
= 1000pF
Enable Thresholds
3.5
FAULT CONDUCTION THRESHOLD (mV)
ENABLE THRESHOLD VOLTAGE (V)
3.0
2.5
2.0
1.5
1.0
0.5
0
0
5
10
V(HIGH)
–40°C
+25°C
+85°C
140
130
120
110
100
90
80
70
60
0
5
10 15 20 25 30
SUPPLY VOLTAGE (V)
35
40
+85°C
+25°C
–40°C
CURRENT LIMIT THRESHOLD (mV)
–40°C
+25°C
V(LOW)
+85°C
15 20 25 30
SUPPLY VOLTAGE (V)
Current Limit Inhibit V
DS
Threshold
1.50
CURRENT LIMIT INHIBIT THRESHOLD (V)
1.45
1.40
1.35
1.30
1.25
1.20
1.15
1.10
1.05
1.00
0
V2 – V11
350
350
BOTTOM GATE FALL TIME (ns)
BOTTOM GATE RISE TIME (ns)
5
10 15 20 25 30
SUPPLY VOLTAGE (V)
4
U W
35
40
LT1158 G07
Charge Pump Output Voltage
50
45
40
35
30
25
20
15
10
5
0
0
5
10 15 20 25 30
SUPPLY VOLTAGE (V)
35
40
10µA LOAD
NO LOAD
Input Thresholds
2.0
1.8
1.6
1.4
1.2
V(LOW)
1.0
0.8
0
5
V(HIGH)
–40°C
+25°C
+85°C
–40°C
+25°C
+85°C
10 15 20 25 30
SUPPLY VOLTAGE (V)
35
40
LT1158 G05
LT1158 G06
Fault Conduction Threshold
160
150
V11 = 0V
200
190
180
170
160
150
140
130
120
110
100
Current Limit Threshold
CLOSED LOOP
+85°C
+25°C
–40°C
0
5
10 15 20 25 30
SUPPLY VOLTAGE (V)
35
40
LT1158 G08
LT1158 G09
Bottom Gate Rise Time
400
400
Bottom Gate Fall Time
300
250
200
150
100
50
C
GATE
= 1000pF
C
GATE
= 3000pF
C
GATE
= 10000pF
300
250
200
150
100
50
0
C
GATE
= 10000pF
–40°C
+25°C
+85°C
C
GATE
= 3000pF
C
GATE
= 1000pF
0
5
10 15 20 25 30
SUPPLY VOLTAGE (V)
35
40
35
40
0
0
5
10 15 20 25 30
SUPPLY VOLTAGE (V)
35
40
LT1158 G10
LT1158 G11
LT1158 G12
LT1158
TYPICAL PERFORMANCE CHARACTERISTICS
Top Gate Rise Time
400
350
400
350
TOP GATE RISE TIME (ns)
TOP GATE FALL TIME (ns)
C
GATE
= 10000pF
TRANSITION TIMES (ns)
300
250
200
150
100
50
0
0
5
C
GATE
= 10000pF
C
GATE
= 3000pF
C
GATE
= 1000pF
10 15 20 25 30
SUPPLY VOLTAGE (V)
PI FU CTIO S
Pin 1 (Boost Drive):
Recharges and clamps the bootstrap
capacitor to 14.5V higher than pin 13 via an external diode.
Pin 2 (V
+
):
Main supply pin; must be closely decoupled to
the ground pin 7.
Pin 3 (Bias):
Decouple point for the internal 2.6V bias
generator.
Pin 3 cannot have any external DC loading.
Pin 4 (Enable):
When left open, the LT1158 operates
normally. Pulling pin 4 low holds both MOSFETs off
regardless of the input state.
Pin 5 (Fault):
Open collector NPN output which turns on
when V12 – V11 exceeds the fault conduction threshold.
Pin 6 (Input):
Taking pin 6 high turns the top MOSFET on
and bottom MOSFET off; pin 6 low reverses these states.
An input latch captures each low state, ignoring an ensu-
ing high until pin 13 has gone below 2.6V.
Pin 8 (Bottom Gate Feedback):
Must connect directly to
the bottom power MOSFET gate. The top MOSFET turn-on
is inhibited until pin 8 has discharged to 1.5V. A hold-on
current source also feeds the bottom gate via pin 8.
Pin 9 (Bottom Gate Drive):
The high current drive point
for the bottom MOSFET. When a gate resistor is used, it is
inserted between pin 9 and the gate of the MOSFET.
Pin 10 (V
+
):
Bottom side driver supply; must be con-
nected to the same supply as pin 2.
Pin 11 (Sense Negative):
The floating reference for the
current limit comparator. Connects to the low side of a
current shunt or Kelvin lead of a current-sensing MOSFET.
When pin 11 is within 1.2V of V
+
, current limit is inhibited.
Pin 12 (Sense Positive):
Connects to the high side of the
current shunt or sense lead of a current-sensing MOSFET.
A built-in offset between pins 11 and 12 in conjunction
with R
SENSE
sets the top MOSFET short-circuit current.
Pin 13 (Top Source):
Top side driver return; connects to
MOSFET source and low side of the bootstrap capacitor.
Pin 14 (Top Gate Feedback):
Must connect directly to the
top power MOSFET gate. The bottom MOSFET turn-on is
inhibited until V14 – V13 has discharged to 1.75V. An on-
chip charge pump also feeds the top gate via pin 14.
Pin 15 (Top Gate Drive):
The high current drive point for
the top MOSFET. When a gate resistor is used, it is inserted
between pin 15 and the gate of the MOSFET.
Pin 16 (Boost):
Top side driver supply; connects to the
high side of the bootstrap capacitor and to a diode either
from supply (V
+
< 10V) or from pin 1 (V
+
> 10V).
U W
35
40
LT1158 G13
Top Gate Fall Time
800
700
600
500
400
Transition Times vs R
Gate
V
+
= 12V
C
GATE
= 3000pF
300
250
200
150
100
RISE TIME
FALL TIME
C
GATE
= 3000pF
300
200
100
C
GATE
= 1000pF
50
0
0
5
10 15 20 25 30
SUPPLY VOLTAGE (V)
35
40
0
0
10 20 30 40 50 60 70 80 90 100
GATE RESISTANCE (Ω)
LT1158 G15
LT1158 G14
U
U
U
5
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