LT1229/LT1230
Dual and Quad 100MHz
Current Feedback Amplifiers
FEATURES
s
s
s
s
s
s
s
s
s
s
s
DESCRIPTIO
100MHz Bandwidth
1000V/µs Slew Rate
Low Cost
30mA Output Drive Current
0.04% Differential Gain
0.1° Differential Phase
High Input Impedance: 25MΩ, 3pF
Wide Supply Range:
±2V
to
±15V
Low Supply Current: 6mA Per Amplifier
Inputs Common Mode to Within 1.5V of Supplies
Outputs Swing Within 0.8V of Supplies
The LT1229/LT1230 dual and quad 100MHz current feed-
back amplifiers are designed for maximum performance
in small packages. Using industry standard pinouts, the
dual is available in the 8-pin miniDIP and the 8-pin SO
package while the quad is in the 14-pin DIP and 14-pin SO.
The amplifiers are designed to operate on almost any
available supply voltage from 4V (±2V) to 30V (±15V).
These current feedback amplifiers have very high input
impedance and make excellent buffer amplifiers. They
maintain their wide bandwidth for almost all closed-loop
voltage gains. The amplifiers drive over 30mA of output
current and are optimized to drive low impedance loads,
such as cables, with excellent linearity at high frequencies.
The LT1229/LT1230 are manufactured on Linear
Technology’s proprietary complementary bipolar process.
For a single amplifier like these see the LT1227 and for
better DC accuracy see the LT1223.
APPLICATI
s
s
s
s
S
Video Instrumentation Amplifiers
Cable Drivers
RGB Amplifiers
Test Equipment Amplifiers
TYPICAL APPLICATI
Video Loop Through Amplifier
R
G1
3.01k
R
F1
750Ω
R
G2
187Ω
R
F2
750Ω
10
0
Loop Through Amplifier Frequency
Response
NORMAL SIGNAL
–10
GAIN (dB)
–
3.01k
V
IN –
1/2
LT1229
–
3.01k V
IN+
1/2
LT1229
V
OUT
–20
–30
–40
–50
–60
10
100
1k
10k
100k
1M
10M 100M
LT1229 • TA02
+
+
1% RESISTORS
WORST CASE CMRR = 22dB
TYPICALLY = 38dB
V
OUT
= G (V
IN+
– V
IN –
)
R
F1
= R
F2
COMMON-MODE SIGNAL
12.1k
12.1k
BNC INPUTS
HIGH INPUT RESISTANCE DOES NOT LOAD CABLE EVEN
WHEN POWER IS OFF
R
G1
= (G – 1) R
F2
R
F2
R
G2
=
G–1
TRIM CMRR WITH R
G1
LT1229 • TA01
U
FREQUENCY (Hz)
UO
UO
1
LT1229/LT1230
ABSOLUTE
AXI U
RATI GS
Storage Temperature Range ................. –65°C to 150°C
Junction Temperature
Plastic Package .............................................. 150°C
Ceramic Package ............................................ 175°C
Lead Temperature (Soldering, 10 sec.)................. 300°C
Supply Voltage ......................................................
±18V
Input Current ......................................................
±15mA
Output Short Circuit Duration (Note 1) ......... Continuous
Operating Temperature Range
LT1229C, LT1230C ............................... 0°C to 70°C
LT1229M, LT1230M ....................... –55°C to 125°C
PACKAGE/ORDER I FOR ATIO
TOP VIEW
OUT A
–IN A
+IN A
V
–
1
2
A
3
4
B
6
5
–IN B
+IN B
8
7
V
+
OUT B
ORDER PART
NUMBER
LT1229MJ8
LT1229CJ8
LT1229CN8
LT1229CS8
S8 PART MARKING
1229
N8 PACKAGE
J8 PACKAGE
8-LEAD CERAMIC DIP 8-LEAD PLASTIC DIP
S8 PACKAGE
8-LEAD PLASTIC SOIC
LT1124 • POI01
T
J MAX
= 175°C,
θ
JA
= 100°C/W (J8)
T
J MAX
= 150°C,
θ
JA
= 100°C/W (N8)
T
J MAX
= 150°C,
θ
JA
= 150°C/W (S8)
Each Amplifier, V
CM
= 0V,
±5V ≤
V
S
=
±
15V, pulse tested unless otherwise noted.
SYMBOL
V
OS
PARAMETER
Input Offset Voltage
Input Offset Voltage Drift
I
IN+
I
IN–
e
n
+i
n
–in
R
IN
C
IN
Noninverting Input Current
Inverting Input Current
Input Noise Voltage Density
Noninverting Input Noise Current Density
Inverting Input Noise Current Density
Input Resistance
Input Capacitance
Input Voltage Range
V
S
=
±15V,
T
A
= 25°C
q
ELECTRICAL CHARACTERISTICS
CONDITIONS
T
A
= 25°C
q
q
T
A
= 25°C
q
T
A
= 25°C
q
f = 1kHz, R
F
= 1k, R
G
= 10Ω, R
S
= 0Ω
f = 1kHz, R
F
= 1k, R
G
= 10Ω, R
S
= 10k
f = 1kHz
V
IN
=
±13V,
V
S
=
±15V
V
IN
=
±3V,
V
S
=
±5V
q
q
V
S
=
±5V,
T
A
= 25°C
q
CMRR
Common-Mode Rejection Ratio
V
S
=
±15V,
V
CM
=
±13V,
T
A
= 25°C
V
S
=
±15V,
V
CM
=
±12V
V
S
=
±
5V, V
CM
=
±3V,
T
A
= 25°C
V
S
=
±5V,
V
CM
=
±
2V
2
U
U
W
W W
U
W
TOP VIEW
OUT A
1
2
3
4
5
6
7
B
C
A
D
14
OUT D
13 –IN D
12 +IN D
11 V
–
10
+IN C
9
8
–IN C
OUT C
ORDER PART
NUMBER
LT1230MJ
LT1230CJ
LT1230CN
LT1230CS
–IN A
+IN A
V
+
+IN B
–IN B
OUT B
J PACKAGE
N PACKAGE
14-LEAD CERAMIC DIP
14-LEAD PLASTIC DIP
S PACKAGE
14-LEAD PLASTIC SOIC
LT1229 • POI02
T
J MAX
= 175°C,
θ
JA
= 80°C/W (J)
T
J MAX
= 150°C,
θ
JA
= 70°C/W (N)
T
J MAX
= 150°C,
θ
JA
= 110°C/W (S)
MIN
TYP
±3
10
±0.3
±10
3.2
1.4
32
MAX
±10
±15
±3
±10
±50
±100
UNITS
mV
mV
µV/°C
µA
µA
µA
µA
nV/√Hz
pA/√Hz
pA/√Hz
MΩ
MΩ
pF
V
V
V
V
dB
dB
dB
dB
2
2
±13
±12
±3
±2
55
55
55
55
25
25
3
±13.5
±3.5
69
69
q
q
LT1229/LT1230
Each Amplifier, V
CM
= 0V,
±5V ≤
V
S
=
±15V,
pulse tested unless otherwise noted.
SYMBOL
PARAMETER
Inverting Input Current
Common-Mode Rejection
CONDITIONS
V
S
=
±15V,
V
CM
=
±13V,
T
A
= 25°C
V
S
=
±15V,
V
CM
=
±12V
V
S
=
±5V,
V
CM
=
±3V,
T
A
= 25°C
V
S
=
±5V,
V
CM
=
±2V
V
S
=
±2V
to
±15V,
T
A
= 25°C
V
S
=
±3V
to
±15V
V
S
=
±2V
to
±15V,
T
A
= 25°C
V
S
=
±3V
to
±15V
V
S
=
±2V
to
±15V,
T
A
= 25°C
V
S
=
±3V
to
±15V
V
S
=
±15V,
V
OUT
=
±10V,
R
L
= 1k
V
S
=
±5V,
V
OUT
=
±2V,
R
L
= 150Ω
V
S
=
±15V,
V
OUT
=
±10V,
R
L
= 1k
V
S
=
±5V,
V
OUT
=
±2V,
R
L
= 150Ω
V
S
=
±15V,
R
L
= 400Ω, T
A
= 25°C
q
q
ELECTRICAL CHARACTERISTICS
MIN
TYP
2.5
2.5
MAX
10
10
10
10
UNITS
µA/V
µA/V
µA/V
µA/V
dB
dB
q
q
q
PSRR
Power Supply Rejection Ratio
Noninverting Input Current
Power Supply Rejection
Inverting Input Current
Power Supply Rejection
60
60
80
10
0.1
50
50
5
5
nA/V
nA/V
µA/V
µA/V
dB
dB
kΩ
kΩ
V
V
V
V
q
q
q
q
q
A
V
R
OL
V
OUT
Large-Signal Voltage Gain, (Note 2)
Transresistance,
∆V
OUT
/∆I
IN–
, (Note 2)
Maximum Output Voltage Swing, (Note 2)
55
55
100
100
±12
±10
±3
±2.5
30
65
65
200
200
±13.5
±3.7
65
6
125
9.5
11
V
S
=
±5V,
R
L
= 150Ω, T
A
= 25°C
q
I
OUT
I
S
SR
SR
t
r
BW
t
r
Maximum Output Current
Supply Current, (Note 3)
Slew Rate, (Notes 4 and 6)
Slew Rate
Rise Time, (Notes 5 and 6)
Small-Signal Bandwidth
Small-Signal Rise Time
Propagation Delay
Small-Signal Overshoot
R
L
= 0Ω, T
A
= 25°C
V
OUT
= 0V, Each Amplifier, T
A
= 25°C
q
mA
mA
mA
V/µs
V/µs
T
A
= 25°C
V
S
=
±15V,
R
F
= 750Ω, R
G
= 750Ω, R
L
= 400Ω
T
A
= 25°C
V
S
=
±15V,
R
F
= 750Ω, R
G
= 750Ω, R
L
= 100Ω
V
S
=
±15V,
R
F
= 750Ω, R
G
= 750Ω, R
L
= 100Ω
V
S
=
±15V,
R
F
= 750Ω, R
G
= 750Ω, R
L
= 100Ω
V
S
=
±15V,
R
F
= 750Ω, R
G
= 750Ω, R
L
= 100Ω
0.1%, V
OUT
= 10V, R
F
=1k, R
G
= 1k, R
L
=1k
V
S
=
±15V,
R
F
= 750Ω, R
G
= 750Ω, R
L
= 1k
V
S
=
±15V,
R
F
= 750Ω, R
G
= 750Ω, R
L
= 1k
V
S
=
±15V,
R
F
= 750Ω, R
G
= 750Ω, R
L
= 150Ω
V
S
=
±15V,
R
F
= 750Ω, R
G
= 750Ω, R
L
= 150Ω
300
700
2500
10
100
3.5
3.5
15
45
0.01
0.01
0.04
0.1
20
ns
MHz
ns
ns
%
ns
%
Deg
%
Deg
t
s
Settling Time
Differential Gain, (Note 7)
Differential Phase, (Note 7)
Differential Gain, (Note 7)
Differential Phase, (Note 7)
The
q
denotes specifications which apply over the operating temperature
range.
Note 1:
A heat sink may be required depending on the power supply
voltage and how many amplifiers are shorted.
Note 2:
The power tests done on
±15V
supplies are done on only one
amplifier at a time to prevent excessive junction temperatures when testing
at maximum operating temperature.
Note 3:
The supply current of the LT1229/LT1230 has a negative
temperature coefficient. For more information see the application
information section.
Note 4:
Slew rate is measured at
±5V
on a
±10V
output signal while
operating on
±15V
supplies with R
F
= 1k, R
G
= 110Ω and R
L
= 400Ω. The
slew rate is much higher when the input is overdriven and when the
amplifier is operated inverting, see the applications section.
Note 5:
Rise time is measured from 10% to 90% on a
±500mV
output
signal while operating on
±15V
supplies with R
F
= 1k, R
G
= 110Ω and R
L
=
100Ω. This condition is not the fastest possible, however, it does
guarantee the internal capacitances are correct and it makes automatic
testing practical.
Note 6:
AC parameters are 100% tested on the ceramic and plastic DIP
packaged parts (J and N suffix) and are sample tested on every lot of the
SO packaged parts (S suffix).
Note 7:
NTSC composite video with an output level of 2V
P
.
3
LT1229/LT1230
TYPICAL PERFOR A CE CHARACTERISTICS
Voltage Gain and Phase vs
Frequency, Gain = 6dB
8
7
6
GAIN
PHASE
0
45
90
–3dB BANDWIDTH (MHz)
VOLTAGE GAIN (dB)
5
4
3
2
1
0
–1
–2
0.1
V
S
= ±15V
R
L
= 100Ω
R
F
= 750Ω
1
10
100
LT1229 • TPC01
135
180
225
120
100
80
60
40
20
0
0
2
4
6
8
10
12
R
F
= 500Ω
R
F
= 750Ω
R
F
= 1k
–3dB BANDWIDTH (MHz)
FREQUENCY (MHz)
Voltage Gain and Phase vs
Frequency, Gain = 20dB
22
21
20
VOLTAGE GAIN (dB)
PHASE
–3dB BANDWIDTH (MHz)
19
18
17
16
15
14
13
12
0.1
V
S
= ±15V
R
L
= 100Ω
R
F
= 750Ω
1
10
100
LT1229 • TPC04
135
180
225
120
100
80
60
40
20
0
0
2
4
6
8
10
12
14
16
18
R
F
= 250Ω
R
F
= 500Ω
R
F
= 750Ω
R
F
= 1k
R
F
= 2k
–3dB BANDWIDTH (MHz)
GAIN
FREQUENCY (MHz)
Voltage Gain and Phase vs
Frequency, Gain = 40dB
42
41
40
PHASE
0
45
90
–3dB BANDWIDTH (MHz)
39
38
37
36
35
34
33
32
0.1
V
S
= ±15V
R
L
= 100Ω
R
F
= 750Ω
1
10
100
LT1229 • TPC07
135
180
225
12
10
8
6
4
2
0
0
2
4
6
8
10
–3dB BANDWIDTH (MHz)
GAIN
VOLTAGE GAIN (dB)
FREQUENCY (MHz)
4
U W
– 3dB Bandwidth vs Supply
Voltage, Gain = 2, R
L
= 100Ω
180
160
140
PEAKING
≤
0.5dB
PEAKING
≤
5dB
180
160
140
120
100
80
60
40
20
0
14
16
18
– 3dB Bandwidth vs Supply
Voltage, Gain = 2, R
L
= 1k
R
F
= 500Ω
R
F
= 750Ω
PHASE SHIFT (DEG)
PHASE SHIFT (DEG)
PEAKING
≤
0.5dB
PEAKING
≤
5dB
R
F
= 1k
R
F
= 2k
R
F
= 2k
0
2
4
6
8
10
12
14
16
18
SUPPLY VOLTAGE (±V)
LT1229 • TPC02
SUPPLY VOLTAGE (±V)
LT1229 • TPC03
– 3dB Bandwidth vs Supply
Voltage, Gain = 10, R
L
= 100Ω
0
45
90
– 3dB Bandwidth vs Supply
Voltage, Gain = 10, R
L
= 1k
180
160
140
120
100
80
60
40
20
0
0
2
4
6
8
10
12
14
16
18
R
F
= 2k
R
F
= 250Ω
R
F
= 500Ω
R
F
= 750Ω
R
F
= 1k
PEAKING
≤
0.5dB
PEAKING
≤
5dB
180
160
140
PEAKING
≤
0.5dB
PEAKING
≤
5dB
SUPPLY VOLTAGE (±V)
LT1229 • TPC05
SUPPLY VOLTAGE (±V)
LT1229 • TPC06
– 3dB Bandwidth vs Supply
Voltage, Gain = 100, R
L
= 100Ω
18
16
14
R
F
= 500Ω
R
F
= 1k
R
F
= 2k
18
16
14
12
10
8
6
4
2
0
12
14
16
18
– 3dB Bandwidth vs Supply
Voltage, Gain = 100, R
L
= 1kΩ
R
F
= 500Ω
PHASE SHIFT (DEG)
R
F
= 1k
R
F
= 2k
0
2
4
6
8
10
12
14
16
18
SUPPLY VOLTAGE (±V)
LT1229 • TPC08
SUPPLY VOLTAGE (±V)
LT1229 • TPC09
LT1229/LT1230
TYPICAL PERFOR A CE CHARACTERISTICS
Maximum Capacitance Load vs
Feedback Resistor
10000
TOTAL HARMONIC DISTORTION (%)
CAPACITIVE LOAD (pF)
1000
V
S
= ±5V
DISTORTION (dBc)
100
V
S
= ±15V
10
R
L
= 1k
PEAKING
≤
5dB
GAIN = 2
1
0
1
2
3
LT1229 • TPC10
FEEDBACK RESISTOR (kΩ)
Input Common-Mode Limit vs
Temperature
V
+
OUTPUT SATURATION VOLTAGE (V)
–0.5
–0.5
–1.0
R
L
=
∞
±2V
≤
V
S
≤
±18V
COMMON MODE RANGE (V)
–1.0
–1.5
–2.0
V
+
= 2V TO 18V
OUTPUT SHORT CIRCUIT CURRENT (mA)
2.0
1.5
1.0
0.5
V
–
– 50 –25
0
25
50
75
100
125
V
–
= –2V TO –18V
TEMPERATURE (°C)
LT1229 • TPC13
Spot Noise Voltage and Current vs
Frequency
100
80
SPOT NOISE (nV/√Hz OR pA/√Hz)
60
POSITIVE
40
OUTPUT IMPEDANCE (Ω)
–i
n
POWER SUPPLY REJECTION (dB)
10
e
n
+i
n
1
10
100
1k
10k
FREQUENCY (Hz)
U W
LT1229 • TPC16
Total Harmonic Distortion vs
Frequency
0.10
V
S
= ±15V
R
L
= 400Ω
R
F
= R
G
= 750Ω
–20
2nd and 3rd Harmonic
Distortion vs Frequency
V
S
= ±15V
V
O
= 2V
P-P
R
L
= 100Ω
R
F
= 750Ω
A
V
= 10dB
–30
2ND
–40
3RD
–50
0.01
V
O
= 7V
RMS
V
O
= 1V
RMS
–60
0.001
10
100
1k
FREQUENCY (Hz)
LT1229 • TPC11
10k
100k
–70
1
10
FREQUENCY (MHz)
LT1229 • TPC12
100
Output Saturation Voltage vs
Temperature
V
+
70
Output Short-Circuit Current vs
Junction Temperature
60
50
1.0
0.5
V
–
–50 –25
40
0
25
50
75
100 125
LT1229 • TPC14
30
–50 –25
0
25
50
75 100 125 150 175
LT1229 • TPC15
TEMPERATURE (°C)
TEMPERATURE (°C)
Power Supply Rejection vs
Frequency
100
V
S
= ±15V
R
L
= 100Ω
R
F
= R
G
= 750Ω
Output Impedance vs
Frequency
V
S
= ±15V
10
1.0
R
F
= R
G
= 2k
0.1
R
F
= R
G
= 750Ω
NEGATIVE
20
0.01
100k
0
10k
100k
1M
FREQUENCY (Hz)
10M
100M
0.001
10k
100k
1M
FREQUENCY (Hz)
10M
100M
LT1229 • TPC17
LT1229 • TPC18
5
嵌入式系统
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