LT1336
Half-Bridge N-Channel
Power MOSFET Driver
with Boost Regulator
FEATURES
s
s
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DESCRIPTION
The LT
®
1336 is a cost effective half-bridge N-channel
power MOSFET driver. The floating driver can drive the
topside N-channel power MOSFETs operating off a high
voltage (HV) rail of up to 60V (absolute maximum). In
PWM operation an on-chip switching regulator maintains
charge in the bootstrap capacitor even when approaching
and operating at 100% duty cycle.
The internal logic prevents the inputs from turning on the
power MOSFETs in a half-bridge at the same time. Its
unique adaptive protection against shoot-through cur-
rents eliminates all matching requirements for the two
MOSFETs. This greatly eases the design of high efficiency
motor control and switching regulator systems.
During low supply or start-up conditions, the undervoltage
lockout actively pulls the driver outputs low to prevent the
power MOSFETs from being partially turned on. The 0.5V
hysteresis allows reliable operation even with slowly vary-
ing supplies.
, LTC and LT are registered trademarks of Linear Technology Corporation.
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s
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Floating Top Driver Switches Up to 60V
Internal Boost Regulator for DC Operation
Drives Gate of Top N-Channel MOSFET
above Supply
180ns Transition Times Driving 10,000pF
Adaptive Nonoverlapping Gate Drives Prevent
Shoot-Through
Top Drive Maintained at High Duty Cycles
TTL/CMOS Input Levels
Undervoltage Lockout with Hysteresis
Operates at Supply Voltages from 10V to 15V
Separate Top and Bottom Drive Pins
APPLICATIONS
s
s
s
s
s
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PWM of High Current Inductive Loads
Half-Bridge and Full-Bridge Motor Control
Synchronous Step-Down Switching Regulators
3-Phase Brushless Motor Drive
High Current Transducer Drivers
Class D Power Amplifiers
TYPICAL APPLICATION
12V
1N4148
200µH*
R
SENSE
2Ω
1/4W
1
I
SENSE
2
SV
+
PV
+
SWITCH
BOOST
16
14
1N4148
HV = 40V MAX**
+
10
10µF
25V
5
3
4
PWM
0Hz TO 100kHz
13
TGATEDR
LT1336
12
TGATEFB
11
TSOURCE
UVOUT
9
BGATEDR
INTOP
8
BGATEFB
INBOTTOM
SGND
6
SWGND
15
PGND
7
+
IRFZ44
1000µF
100V
+
C
BOOST
1µF
INTOP INBOTTOM TGATEDR
IRFZ44
L
L
H
H
*SUMIDA RCR-664D-221KC
**FOR HV > 40V SEE “DERIVING THE FLOATING
SUPPLY WITH THE FLYBACK TOPOLOGY” IN
APPLICATIONS INFORMATION SECTION
U
U
U
BGATEDR
L
H
L
L
L
H
L
H
L
L
H
L
1336 TA01
1
LT1336
ABSOLUTE
MAXIMUM
RATINGS
Supply Voltage (Pins 2, 10) .................................... 20V
Boost Voltage ......................................................... 75V
Peak Output Currents (< 10µs) .............................. 1.5A
Input Pin Voltages .......................... – 0.3V to V
+
+ 0.3V
Top Source Voltage ..................................... – 5V to 60V
Boost-to-Source Voltage
(V
BOOST
– V
TSOURCE
) ............................ – 0.3V to 20V
Switch Voltage (Pin 16) ............................ – 0.3V to 60V
Operating Temperature Range
Commercial ............................................ 0°C to 70°C
Industrial ........................................... – 40°C to 85°C
Junction Temperature (Note 1)............................ 125°C
Storage Temperature Range ................ – 65°C to 150°C
Lead Temperature (Soldering, 10 sec)................. 300°C
PACKAGE/ORDER INFORMATION
TOP VIEW
I
SENSE
SV
+
INTOP
INBOTTOM
UVOUT
SGND
PGND
BGATEFB
1
2
3
4
5
6
7
8
16 SWITCH
15 SWGND
14 BOOST
13 TGATEDR
12 TGATEFB
11 TSOURCE
10 PV
+
9
BGATEDR
ORDER PART
NUMBER
LT1336CN
LT1336CS
LT1336IN
LT1336IS
N PACKAGE
16-LEAD PDIP
S PACKAGE
16-LEAD PLASTIC SO NARROW
T
JMAX
= 125°C,
θ
JA
= 70°C/ W (N)
T
JMAX
= 125°C,
θ
JA
= 110°C/ W (S)
Consult factory for Military grade parts.
ELECTRICAL CHARACTERISTICS
Test Circuit, T
A
= 25°C, V
+
= V
BOOST
= 12V, V
TSOURCE
= 0V and Pins 1, 16
open. Gate Feedback pins connected to Gate Drive pins unless otherwise specified.
SYMBOL PARAMETER
DC Supply Current (Note 2)
I
S
CONDITIONS
V
+
= 15V, V
INTOP
= 0.8V, V
INBOTTOM
= 2V
V
+
= 15V, V
INTOP
= 2V, V
INBOTTOM
= 0.8V
V
+
= 15V, V
INTOP
= 0.8V, V
INBOTTOM
= 0.8V
V
+
= 15V, V
TSOURCE
= 40V, V
INTOP
= V
INBOTTOM
=
0.8V (Note 3)
V
+
= 15V, V
TSOURCE
= 60V, V
BOOST
= 75V,
V
INTOP
= V
INBOTTOM
= 0.8V
q
q
MIN
12
12
12
TYP
15
14
15
30
5
1.4
MAX
20
20
20
40
7
0.8
25
9.4
8.8
9.8
9.2
5
0.4
12
12
0.7
0.7
UNITS
mA
mA
mA
mA
mA
V
V
µA
V
V
V
V
µA
V
V
V
V
V
I
BOOST
V
IL
V
IH
I
IN
V
+UVH
V
+UVL
V
BUVH
V
BUVL
I
UVOUT
V
UVOUT
V
OH
Boost Current (Note 2)
Input Logic Low
Input Logic High
Input Current
V
+
Undervoltage Start-Up Threshold
V
+
Undervoltage Shutdown Threshold
V
BOOST
Undervoltage Start-Up Threshold
V
BOOST
Undervoltage Shutdown Threshold
Undervoltage Output Leakage
Undervoltage Output Saturation
Top Gate ON Voltage
Bottom Gate ON Voltage
3
2
8.4
7.8
1.7
7
8.9
8.3
9.3
8.7
0.1
0.2
V
INTOP
= V
INBOTTOM
= 4V
q
V
TSOURCE
= 60V, V
BOOST
– V
TSOURCE
V
TSOURCE
= 60V, V
BOOST
– V
TSOURCE
V
+
= 15V
V
+
= 7.5V, I
UVOUT
= 2.5mA
V
INTOP
= 2V, V
INBOTTOM
= 0.8V,
V
TGATE DR
– V
TSOURCE
V
INTOP
= 0.8V, V
INBOTTOM
= 2V, V
BGATE DR
V
INTOP
= 0.8V, V
INBOTTOM
= 2V,
V
TGATE DR
– V
TSOURCE
V
INTOP
= 2V, V
INBOTTOM
= 0.8V, V
BGATE DR
q
q
q
q
q
q
8.8
8.2
11
11
11.3
11.3
0.4
0.4
V
OL
Top Gate OFF Voltage
Bottom Gate OFF Voltage
2
U
W
U
U
W W
W
LT1336
ELECTRICAL CHARACTERISTICS
Test Circuit, T
A
= 25°C, V
+
= V
BOOST
= 12V, V
TSOURCE
= 0V, and Pins 1, 16
open. Gate Feedback pins connected to Gate Drive pins unless otherwise specified.
SYMBOL PARAMETER
V
IS
V
ISHYS
V
SAT
V
BOUT
t
r
I
SENSE
Peak Current Threshold
I
SENSE
Hysteresis
Switch Saturation Voltage
V
BOOST
Regulated Output
Top Gate Rise Time
Bottom Gate Rise Time
t
f
Top Gate Fall Time
Bottom Gate Fall Time
t
D1
Top Gate Turn-On Delay
Bottom Gate Turn-On Delay
t
D2
Top Gate Turn-Off Delay
Bottom Gate Turn-Off Delay
t
D3
Top Gate Lockout Delay
Bottom Gate Lockout Delay
t
D4
Top Gate Release Delay
Bottom Gate Release Delay
CONDITIONS
V
TSOURCE
= 60V, V
BOOST
= 68V, V
+
– V
ISENSE
MIN
310
25
q
TYP
480
55
0.85
MAX
650
85
1.2
11.2
200
200
140
140
500
400
600
400
600
500
500
400
UNITS
mV
mV
V
V
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
TSOURCE
= 60V, V
BOOST
= 68V
V
ISENSE
= V
+
, V
BOOST
– V
TSOURCE
= 9V,
I
SW
= 100mA
V
TSOURCE
= 40V, V
INTOP
= V
INBOTTOM
= 0.8V,
I
BOOST
= 10mA, V
BOOST
– V
TSOURCE
V
INTOP
(+) Transition, V
INBOTTOM
= 0.8V,
Measured at V
TGATE DR
– V
TSOURCE
(Note 4)
V
INBOTTOM
(+) Transition, V
INTOP
= 0.8V,
Measured at V
BGATE DR
(Note 4)
V
INTOP
(–) Transition, V
INBOTTOM
= 0.8V,
Measured at V
TGATE DR
– V
TSOURCE
(Note 4)
V
INBOTTOM
(–) Transition, V
INTOP
= 0.8V,
Measured at V
BGATE DR
(Note 4)
V
INTOP
(+) Transition, V
INBOTTOM
= 0.8V,
Measured at V
TGATE DR
– V
TSOURCE
(Note 4)
V
INBOTTOM
(+) Transition, V
INTOP
= 0.8V,
Measured at V
BGATE DR
(Note 4)
V
INTOP
(–) Transition, V
INBOTTOM
= 0.8V,
Measured at V
TGATE DR
– V
TSOURCE
(Note 4)
V
INBOTTOM
(–) Transition, V
INTOP
= 0.8V,
Measured at V
BGATE DR
(Note 4)
V
INBOTTOM
(+) Transition, V
INTOP
= 2V,
Measured at V
TGATE DR
– V
TSOURCE
(Note 4)
V
INTOP
(+) Transition, V
INBOTTOM
= 2V,
Measured at V
BGATE DR
(Note 4)
V
INBOTTOM
(–) Transition, V
INTOP
= 2V,
Measured at V
TGATE DR
– V
TSOURCE
(Note 4)
V
INTOP
(–) Transition, V
INBOTTOM
= 2V,
Measured at V
BGATE DR
(Note 4)
q
q
q
q
q
q
q
q
q
q
q
q
10
10.6
130
90
60
60
250
200
300
200
300
250
250
200
The
q
denotes specifications which apply over the full operating
temperature range.
Note 1:
T
J
is calculated from the ambient temperature T
A
and power
dissipation P
D
according to the following formulas:
LT1336CN/LT1336IN: T
J
= T
A
+ (P
D
)(70°C/ W)
LT1336CS/LT1336IS: T
J
= T
A
+ (P
D
)(110°C/ W)
Note 2:
Dynamic supply current is higher due to the gate charge being
delivered at the switching frequency. See Typical Performance
Characteristics and Applications Information sections.
Note 3:
Pins 1 and 16 connected to each end of the inductor. Booster is
free running.
Note 4:
See Timing Diagram. Gate rise times are measured from 2V to 10V
and fall times are measured from 10V to 2V. Delay times are measured
from the input transition to when the gate voltage has risen to 2V or
decreased to 10V.
3
LT1336
TYPICAL PERFORMANCE CHARACTERISTICS
DC Supply Current
vs Supply Voltage
22
20
V
TSOURCE
= 0V
BOTH INPUTS
HIGH OR LOW
18
17
SUPPLY CURRENT (mA)
SUPPLY CURRENT (mA)
16
14
12
10
8
6
4
6
8
10 12 14 16
SUPPLY VOLTAGE (V)
18
20
V
INTOP
= HIGH
V
INBOTTOM
= LOW
V
INTOP
= LOW
V
INBOTTOM
= HIGH
15
14
13
12
11
10
9
–50
–25
BOTH INPUTS
HIGH OR LOW
SUPPLY CURRENT (mA)
18
DC + Dynamic Supply Current
vs Input Frequency
60
50
50% DUTY CYCLE
C
GATE
= 3000pF
60
50
SUPPLY CURRENT (mA)
SUPPLY CURRENT (mA)
40
30
V
+
= 15V
20
10
0
40
C
GATE
= 10000pF
30
C
GATE
= 3000pF
20
10
0
C
GATE
= 1000pF
SUPPLY VOLTAGE (V)
V = 20V
+
1
10
100
INPUT FREQUENCY (kHz)
Undervoltage Lockout (V
BOOST
)
13
12
V
BOOST
– V
TSOURCE
VOLTAGE (V)
V
TSOURCE
= 60V
INPUT THRESHOLD VOLTAGE (V)
1.8
1.6
11
10
9
8
7
6
5
4
–50
–25
0
25
50
75
TEMPERATURE (°C)
100
125
SHUTDOWN THRESHOLD
START-UP THRESHOLD
INPUT CURRENT (µA)
4
U W
1336 G01
DC Supply Current
vs Temperature
V
+
= 12V
V
TSOURCE
= 0V
34
31
28
25
22
19
16
13
10
0
25
50
75
TEMPERATURE (°C)
100
125
DC Supply Current
vs Top Source Voltage
V
+
= 12V
V
INTOP
= LOW
V
INBOTTOM
= HIGH
BOTH INPUTS
HIGH OR LOW
16
V
INTOP
= HIGH
V
INBOTTOM
= LOW
V
INTOP
= LOW
V
INBOTTOM
= HIGH
V
INTOP
= HIGH
V
INBOTTOM
= LOW
0
5
10 15 20 25 30
TOP SOURCE VOLTAGE (V)
35
40
1336 G02
1336 G18
DC + Dynamic Supply Current
vs Input Frequency
13
Undervoltage Lockout (V
+
)
12
11
10
START-UP THRESHOLD
9
8
7
6
5
SHUTDOWN THRESHOLD
50% DUTY CYCLE
V
+
= 12V
V
+
= 10V
1000
1336 G03
1
10
100
INPUT FREQUENCY (kHz)
1000
1336 G04
4
–50
–25
0
25
50
75
TEMPERATURE (°C)
100
125
1336 G05
Input Threshold Voltage
vs Temperature
2.0
V
+
= 12V
V
HIGH
14
13
12
11
10
9
8
7
6
5
0.8
–50
–25
0
25
50
75
TEMPERATURE (°C)
100
125
Top or Bottom Input Pin Current
vs Temperature
V
+
= 12V
V
IN
= 4V
V
LOW
1.4
1.2
1.0
4
–50
–25
50
25
0
75
TEMPERATURE (°C)
100
125
1336 G06
1336 G07
1336 G08
LT1336
TYPICAL PERFORMANCE CHARACTERISTICS
Top or Bottom Input Pin Current
vs Input Voltage
5.0
4.5
4.0
V
+
= 12V
230
210
V
+
= 12V
BOTTOM GATE RISE TIME (ns)
BOTTOM GATE FALL TIME (ns)
INPUT CURRENT (mA)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
4
5
6
10
8
7
9
INPUT VOLTAGE (V)
11
12
Top Gate Rise Time
vs Temperature
300
280
260
V
+
= 12V
C
LOAD
= 10000pF
TOP GATE FALL TIME (ns)
TOP GATE RISE TIME (ns)
240
220
200
180
160
140
120
100
80
–50
–25
C
LOAD
= 1000pF
0
25
50
75
TEMPERATURE (°C)
100
125
C
LOAD
= 3000pF
140
120
100
80
60
40
C
LOAD
= 1000pF
20
–50 –25
0
25
50
75
100
125
C
LOAD
= 3000pF
TURN-ON DELAY TIME (ns)
Turn-Off Delay Time
vs Temperature
400
V
+
= 12V
350
TURN-OFF DELAY TIME (ns)
C
LOAD
= 3000pF
LOCKOUT DELAY TIME (ns)
RELEASE DELAY TIME (ns)
300
250
200
150
100
–50
TOP DRIVER
BOTTOM DRIVER
–25
0
25
50
75
TEMPERATURE (°C)
U W
1336 G09
1336 G12
Bottom Gate Rise Time
vs Temperature
210
190
170
150
130
110
90
70
50
125
Bottom Gate Fall Time
vs Temperature
V
+
= 12V
190
170
150
130
110
90
70
50
–50
C
LOAD
= 10000pF
C
LOAD
= 10000pF
C
LOAD
= 3000pF
C
LOAD
= 1000pF
–25
0
25
50
75
TEMPERATURE (°C)
100
C
LOAD
= 1000pF
C
LOAD
= 3000pF
30
–50
–25
0
25
50
75
TEMPERATURE (°C)
100
125
1336 G10
1336 G11
Top Gate Fall Time
vs Temperature
180
160
V
+
= 12V
C
LOAD
= 10000pF
Turn-On Delay Time
vs Temperature
400
350
300
TOP DRIVER
250
200
BOTTOM DRIVER
150
100
–50
V
+
= 12V
C
LOAD
= 3000pF
–25
TEMPERATURE (°C)
1336 G13
0
25
50
75
TEMPERATURE (°C)
100
125
1336 G14
Lockout Delay Time
vs Temperature
400
V
+
= 12V
350
300
250
200
150
100
–50
C
LOAD
= 3000pF
Release Delay Time
vs Temperature
400
350
V
+
= 12V
C
LOAD
= 3000pF
TOP DRIVER
BOTTOM DRIVER
300
TOP DRIVER
250
200
BOTTOM DRIVER
150
100
–50
100
125
–25
0
25
50
75
TEMPERATURE (°C)
100
125
–25
0
25
50
75
TEMPERATURE (°C)
100
125
1336 G15
1336 G16
1336 G17
5
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