TST30H120CW thru TST30H200CW
Taiwan Semiconductor
Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ High efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
TO-220AB
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters, lighting
and on-board DC/DC converters.
MECHANICAL DATA
Case:
TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N with suffix "M" on P/N - commercial grade
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:
As marked
Mounting torque:
0.56 Nm max.
Weight:
1.88 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
= 25 C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified
current
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
dV/dt
TYP.
Instantaneous forward voltage per diode
( Note1 )
I
F
= 15A
I
F
= 15A
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
V
F
V
F
I
R
R
θJC
T
J
T
STG
0.79
0.65
-
10
2.2
MAX.
0.88
0.75
250
35
TST30H
120CW
120
TST30H
150CW
150
30
15
150
10000
TYP.
0.81
0.68
-
3
3
- 55 to +150
- 55 to +150
MAX.
0.90
0.77
150
20
TYP.
0.84
0.70
-
3
3
MAX.
0.92
0.79
150
20
O
o
TST30H
200CW
200
UNIT
V
A
A
V/μs
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
Voltage rate of change (Rated V
R
)
V
μA
mA
C/W
O
O
Instantaneous reverse current per diode at rated
reverse voltage
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with pulse width=300μs, 1% duty cycle
C
C
Document Number: DS_D1409020
Version: C14
TST30H120CW thru TST30H200CW
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
TST30HXXXCW
(Note 1)
PART NO.
SUFFIX
M
PACKING
CODE
C0
PACKING CODE
SUFFIX
G
PACKAGE
TO-220AB
PACKING
50 / Tube
Note 1: "XXX" defines voltage from 120V (TST30H120CW) to 200V (TST30H200CW)
EXAMPLE
PREFERRED P/N
TST30H120CWMC0
TST30H120CWMC0G
PART NO.
TST30H120CW
TST30H120CW
PART NO.
SUFFIX
M
M
PACKING CODE
C0
C0
G
PACKING CODE
SUFFIX
DESCRIPTION
Commercial grade
Commercial grade
Green compound
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25
o
C unless otherwise noted)
FIG. 1 FORWARD CURRENT DERATING CURVE
35
30
25
TST30H150CW
20
15
10
5
0
0
25
50
75
100
125
150
TST30H200CW
TST30H120CW
INSTANTANEOUS FORWARD CURRENT (A)
FIG. 2 TYPICAL FORWARD CHARACTERISTICS
100
TST30H120CW
AVERAGE FORWARD CURRENT (A)
10
T
J
=150
o
C
1
T
J
=125
o
C
T
J
=100
o
C
0.1
T
J
=25
o
C
0.01
0
0.2
0.4
0.6
0.8
1
FORWARD VOLTAGE (V)
WITH HEATSINK
3in x 5in x 0.25in
Al-Plate
CASE TEMPERATURE (
o
C)
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT (A)
INSTANTANEOUS FORWARD CURRENT (A)
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
100
TST30H150CW
TST30H200CW
10
10
T
J
=150
o
C
1
T
J
=125
o
C
T
J
=150
o
C
T
J
=125
o
C
1
T
J
=100
o
C
0.1
T
J
=100
o
C
0.1
T
J
=25
o
C
0.01
T
J
=25
o
C
0.01
0
0.2
0.4
0.6
0.8
1
FORWARD VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
FORWARD VOLTAGE (V)
Document Number: DS_D1409020
Version: C14
TST30H120CW thru TST30H200CW
Taiwan Semiconductor
FIG. 5 TYPICAL REVERSE CHARACTERISTICS
100
TST30H120CW
INSTANTANEOUS REVERSE CURRENT
(mA)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
100
TST30H150CW
INSTANTANEOUS REVERSE CURRENT
(mA)
10
1
0.1
0.01
0.001
T
J
=25
o
C
T
J
=150
o
C
T
J
=125
o
C
T
J
=100
o
C
10
1
0.1
0.01
0.001
T
J
=25
o
C
T
J
=150
o
C
T
J
=125
o
C
T
J
=100
o
C
0.0001
0.0001
0.00001
10
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
0.00001
10
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
100
TST30H200CW
INSTANTANEOUS REVERSE CURRENT
(mA)
FIG. 6 TYPICAL JUNCTION CAPACTIANCE
10000
f=1.0MHz
Vsig=50mVp-p
JUNCTION CAPACITANCE (pF)
10
1
T
J
=150
o
C
0.1
0.01
0.001
T
J
=125
o
C
T
J
=100
o
C
TST30H120CW
1000
TST30H150CW
TST30H200CW
0.0001
T
J
=25
o
C
10
20
30
40
50
60
70
80
90
100
100
0.1
1
10
100
REVERSE VOLTAGE (V)
0.00001
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D1409020
Version: C14
TST30H120CW thru TST30H200CW
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
TO-220AB
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
Unit (mm)
Min
-
2.54
2.80
0.68
3.54
14.60
13.19
2.41
4.42
1.14
5.84
2.20
0.35
0.95
Max
10.50
3.44
4.20
0.94
4.00
16.00
14.79
2.67
4.76
1.40
6.86
2.80
0.64
1.45
Unit (inch)
Min
-
0.100
0.110
0.027
0.139
0.575
0.519
0.095
0.174
0.045
0.230
0.087
0.014
0.037
Max
0.413
0.135
0.165
0.037
0.157
0.630
0.582
0.105
0.187
0.055
0.270
0.110
0.025
0.057
MARKING DIAGRAM
P/N
G
YWW
F
= Specific Device Code
= Green Compound
= Date Code
= Factory Code
Document Number: DS_D1409020
Version: C14
TST30H120CW thru TST30H200CW
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1409020
Version: C14
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