SKiiP 22 NAB 12 - SKiiP 22 NAB 12 I
Absolute Maximum Ratings
Symbol
Conditions
1)
Values
1200
± 20
23 / 15
46 / 30
24 / 17
48 / 34
1500
25
700
2400
– 40 . . . + 150
– 40 . . . + 125
2500
Units
V
V
A
A
A
A
V
A
A
A
2
s
°C
°C
V
Inverter & Chopper
V
CES
V
GES
I
C
T
heatsink
= 25 / 80 °C
t
p
< 1 ms; T
heatsink
= 25 / 80 °C
I
CM
T
heatsink
= 25 / 80 °C
I
F
= –I
C
I
FM
= –I
CM
t
p
< 1 ms; T
heatsink
= 25 / 80 °C
Bridge Rectifier
V
RRM
T
heatsink
= 80 °C
I
D
I
FSM
t
p
= 10 ms; sin. 180 °, T
j
= 25 °C
2
t
t
p
= 10 ms; sin. 180 °, T
j
= 25 °C
I
T
j
T
stg
V
isol
AC, 1 min.
MiniSKiiP 2
SEMIKRON integrated
intelligent Power
SKiiP 22 NAB 12
SKiiP 22 NAB 12 I
3)
3-phase bridge rectifier +
braking chopper +
3-phase bridge inverter
Case M2
Characteristics
Symbol
Conditions
1)
IGBT - Inverter & Chopper
I
C
= 15 A T
j
= 25 (125)
°C
V
CEsat
V
CC
= 600 V; V
GE
= ± 15 V
t
d(on)
t
r
I
C
= 15 A; T
j
= 125
°C
t
d(off)
R
gon
= R
goff
= 82
Ω
t
f
inductive load
E
on
+ E
off
C
ies
V
CE
= 25 V; V
GE
= 0 V, 1 MHz
R
thjh
per IGBT
Diode
2)
- Inverter & Chopper
V
F
= V
EC
I
F
= 15 A T
j
= 25 (125)
°C
V
TO
T
j
= 125 °C
r
T
T
j
= 125 °C
I
F
= 15 A, V
R
= – 600 V
I
RRM
di
F
/dt = – 400 A/µs
Q
rr
E
off
V
GE
= 0 V, T
j
= 125 °C
per diode
R
thjh
Diode - Rectifier
V
F
I
F
= 35 A, T
j
= 25 °C
R
thjh
per diode
Temperature Sensor
T = 25 / 100 °C
R
TS
Shunts (SKiiP 22 NAB 12 I)
R
cs(dc)
5 %
4)
R
cs(ac)
1%
Mechanical Data
case to heatsink, SI Units
M
1
mechanical outline see page
Case
B 16 – 8
2
min.
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
typ.
max.
Units
2,5(3,1) 3,0(3,7)
V
55
110
ns
45
90
ns
400
600
ns
70
100
ns
4,0
–
mJ
1,0
–
nF
–
1,4
K/W
V
2,0(1,8) 2,5(2,3)
V
1,2
1,0
mΩ
73
53
–
A
16
–
µC
2,7
–
mJ
0,6
1,7
K/W
–
1,2
–
1000 / 1670
16,5
10
–
M2
2,5
–
1,6
V
K/W
Ω
mΩ
mΩ
Nm
UL recognized file no. E63532
•
•
specification of shunts and
temperature sensor see part A
common characteristics see
page B 16 – 4
T
heatsink
= 25 °C, unless
otherwise specified
CAL = Controlled Axial Lifetime
Technology (soft and fast
recovery)
With integrated DC and/or AC
shunts
accuracy of pure shunt, please
note that for DC shunt no
separate sensing contact is
used.
1)
2)
3)
4)
© by SEMIKRON
000131
B 16 – 53
Fig. 1 Typ. output characteristic, t
p
= 80
µs;
25 °C
Fig. 2 Typ. output characteristic, t
p
= 80
µs;
125 °C
22NA1203.xls
22NA1204.xls
5
mWs
Eon
4
T
j
= 125 °C
V
CE
= 600 V
V
GE
= ± 15 V
R
G
= 52
Ω
5
mWs
4
T
j
= 125 °C
V
CE
= 600 V
V
GE
= ± 15 V
I
C
= 15 A
Eon
3
Eoff
3
2
2
Eoff
1
E
0
0
I
C
10
20
A
30
1
E
0
0
R
G
50
100
Ω
150
Fig. 3 Turn-on /-off energy = f (I
C
)
I
Cpuls
= 15 A
Fig. 4 Turn-on /-off energy = f (R
G
)
V
GE
= 0 V
f = 1 MHz
Fig. 5 Typ. gate charge characteristic
B 16 – 54
Fig. 6 Typ. capacitances vs. V
CE
000131
© by SEMIKRON
MiniSKiiP 1200 V
ICop / IC
1.2
Mini1207
T
j
= 150 °C
V
GE
=
≥
15 V
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
Th [°C]
Fig. 7 Rated current of the IGBT I
Cop
/ I
C
= f (T
h
)
ICpuls/IC
2,5
Mini1209
T
j
=
≤
150 °C
V
GE
= ± 15 V
ICsc/ICN
12
Mini1210
2
10
T
j
=
≤
150 °C
V
GE
= ± 15 V
t
sc
=
≤
10
µs
L
ext
< 25 nH
8
1,5
6
1
4
Note:
*Allowed numbers of
short ci cuit:<1000
r
*Time between short
circuit:>1s
0,5
2
0
0
500
1000
1500
VCE [V]
0
0
500
1000
1500
VCE [V]
Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT
Fig. 10 Safe operating area at short circuit of the IGBT
Fig. 11 Typ. freewheeling diode forward characteristic
B 16 – 4
Fig. 12 Forward characteristic of the input bridge diode
0698
© by SEMIKRON
MiniSKiiP 2
+rect
+B
+DC
I+
SKiiP 20 NAB 06 ...
SKiiP 21 NAB 06 ...
SKiiP 20 NAB 12 ...
SKiiP 22 NAB 12 ...
Circuit
Case M2
Layout and connections for the
customer’s printed circuit board
Note: The shunts are available
only by option I
g1
L1
L2
L3
B
gB
+T
-T
g2
g3
g5
U
V
W
g4
Isu
0u
g6
Isv
0v
Isw
0w
Hauptanschluß
power connector
control pin
Steueranschluß
-rect
-B
-DC
-DC/A
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