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CY7C1380DV25-200BGI

产品描述Cache SRAM, 512KX36, 3ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, BGA-119
产品类别存储    存储   
文件大小498KB,共29页
制造商Cypress(赛普拉斯)
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CY7C1380DV25-200BGI概述

Cache SRAM, 512KX36, 3ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, BGA-119

CY7C1380DV25-200BGI规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Cypress(赛普拉斯)
零件包装代码BGA
包装说明14 X 22 MM, 2.40 MM HEIGHT, BGA-119
针数119
Reach Compliance Codecompliant
ECCN代码3A991.B.2.A
最长访问时间3 ns
其他特性PIPELINED ARCHITECTURE
JESD-30 代码R-PBGA-B119
JESD-609代码e0
长度22 mm
内存密度18874368 bit
内存集成电路类型CACHE SRAM
内存宽度36
湿度敏感等级3
功能数量1
端子数量119
字数524288 words
字数代码512000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织512KX36
封装主体材料PLASTIC/EPOXY
封装代码BGA
封装形状RECTANGULAR
封装形式GRID ARRAY
并行/串行PARALLEL
峰值回流温度(摄氏度)220
认证状态Not Qualified
座面最大高度2.4 mm
最大供电电压 (Vsup)2.625 V
最小供电电压 (Vsup)2.375 V
标称供电电压 (Vsup)2.5 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Lead (Sn/Pb)
端子形式BALL
端子节距1.27 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度14 mm
Base Number Matches1

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CY7C1380DV25
CY7C1382DV25
18-Mbit (512K x 36/1M x 18)
Pipelined SRAM
Features
• Supports bus operation up to 250 MHz
• Available speed grades are 250, 200 and 167 MHz
• Registered inputs and outputs for pipelined operation
• 2.5V core power supply
• Fast clock-to-output times
— 2.6 ns (for 250-MHz device)
• Provide high-performance 3-1-1-1 access rate
User-selectable burst counter supporting Intel
®
Pentium
®
interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self-timed writes
• Asynchronous output enable
• Single Cycle Chip Deselect
• Available in JEDEC-standard lead-free 100-pin TQFP,
lead-free and non lead-free 119-ball BGA package and
165-ball FBGA package
• IEEE 1149.1 JTAG-Compatible Boundary Scan
• “ZZ” Sleep Mode Option
Functional Description
[1]
The CY7C1380DV25/CY7C1382DV25 SRAM integrates
512K x 36 and 1M x 18 SRAM cells with advanced
synchronous peripheral circuitry and a two-bit counter for
internal burst operation. All synchronous inputs are gated by
registers controlled by a positive-edge-triggered Clock Input
(CLK). The synchronous inputs include all addresses, all data
inputs, address-pipelining Chip Enable (CE
1
), depth-
expansion Chip Enables (CE
2
and CE
3[2]
), Burst Control
inputs (ADSC, ADSP, and ADV), Write Enables (BW
X
, and
BWE), and Global Write (GW). Asynchronous inputs include
the Output Enable (OE) and the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle.This part supports Byte Write
operations (see Pin Descriptions and Truth Table for further
details). Write cycles can be one to two or four bytes wide as
controlled by the byte write control inputs. GW when active
LOW causes all bytes to be written.
The CY7C1380DV25/CY7C1382DV25 operates from a +2.5V
core power supply while all outputs may operate with a +2.5
supply. All inputs and outputs are JEDEC-standard JESD8-5-
compatible.
Selection Guide
250 MHz
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
2.6
350
70
200 MHz
3.0
300
70
167 MHz
3.4
275
70
Unit
ns
mA
mA
Notes:
1. For best-practices recommendations, please refer to the Cypress application note
System Design Guidelines
on www.cypress.com.
2. CE
3
, CE
2
are for TQFP and 165 FBGA package only. 119 BGA is offered only in 1 Chip Enable.
Cypress Semiconductor Corporation
Document #: 38-05546 Rev. *D
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised June 27, 2006

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