Datasheet> 器件分类 > 分立半导体> 二极管> BYV27/100

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BYV27/100: 产品描述Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2; 产品类别分立半导体二极管; 文件大小73KB，共2页; 制造商Diodes Incorporated

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BYV27/100概述

Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2

BYV27/100规格参数

参数名称	属性值
是否Rohs认证	不符合
包装说明	HERMETIC SEALED, GLASS PACKAGE-2
针数	2
Reach Compliance Code	compliant
ECCN代码	EAR99
应用	EFFICIENCY
外壳连接	ISOLATED
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
最大正向电压 (VF)	1.1 V
JESD-30 代码	E-LALF-W2
JESD-609代码	e0
最大非重复峰值正向电流	50 A
元件数量	1
相数	1
端子数量	2
最高工作温度	175 °C
最大输出电流	2 A
封装主体材料	GLASS
封装形状	ELLIPTICAL
封装形式	LONG FORM
峰值回流温度（摄氏度）	235
认证状态	Not Qualified
最大重复峰值反向电压	100 V
最大反向恢复时间	0.025 µs
表面贴装	NO
端子面层	Tin/Lead (Sn/Pb)
端子形式	WIRE
端子位置	AXIAL
处于峰值回流温度下的最长时间	10
Base Number Matches	1

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BYV27/50 - BYV27/200

2.0A SUPER-FAST GLASS BODY RECTIFIER

Features

Hermetically Sealed Glass Body Construction

Controlled Avalanche Characteristics

Super-Fast Switching for High Efficiency

High Current Capability and Low Forward

Voltage Drop

Surge Overload Rating to 50A Peak

Low Reverse Leakage Current

SOD-57

Dim

Min

26.0

Max

4.2

0.82

3.6

Mechanical Data

Case: SOD-57, Glass

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 0.50 grams (approx.)

Mounting Position: Any

Marking: Type Number

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Non-Repetitive Peak Reverse Voltage

Average Rectified Output Current

(Note 1)

Non-Repetitive Peak Forward Surge Current 8.3ms

single half sine-wave superimposed on rated load

(JEDEC Method)

Repetitive Forward Surge Current

Forward Voltage

@ I

= 5.0A

Peak Reverse Current

@ T

= 25°C

at Rated DC Blocking Voltage

@ T

= 165°C

Non-Repetitive Reverse Avalanche Energy

= 0.6A Inductive Load

@ T

= 175°C

Reverse Recovery Time

Operating and Storage Temperature Range

Notes:

(Note 2)

Typical Thermal Resistance Junction to Ambient (Note 1)

Symbol

RRM

RWM

R(RMS)

RSM

FSM

FRM

RSM

qJA

STG

@ T

= 25°C unless otherwise specified

BYV27/100

100

110

2.0

1.1

1.0

150

-65 to +175

BYV27/150

150

100

165

BYV27/200

200

140

220

Unit

K/W

°C

BYV27/50

1.Leads maintained at ambient temperature at a distance of 10mm from the case.

2. Measured with I

= 0.5A, I

= 1.0A, I

= 0.25A. See Figure 4.

DS30038 Rev. A - PRELIMINARY

1 of 2

BYV27/50 / BYV27/200

BYV27/100相似产品对比

	BYV27/100	BYV27/50	BYV27/150
描述	Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2	Rectifier Diode, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2	Rectifier Diode, 1 Phase, 1 Element, 2A, 150V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2
是否Rohs认证	不符合	不符合	不符合
包装说明	HERMETIC SEALED, GLASS PACKAGE-2	E-LALF-W2	E-LALF-W2
针数	2	2	2
Reach Compliance Code	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99
应用	EFFICIENCY	EFFICIENCY	EFFICIENCY
外壳连接	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
最大正向电压 (VF)	1.1 V	1.1 V	1.1 V
JESD-30 代码	E-LALF-W2	E-LALF-W2	E-LALF-W2
JESD-609代码	e0	e0	e0
最大非重复峰值正向电流	50 A	50 A	50 A
元件数量	1	1	1
相数	1	1	1
端子数量	2	2	2
最高工作温度	175 °C	175 °C	175 °C
最大输出电流	2 A	2 A	2 A
封装主体材料	GLASS	GLASS	GLASS
封装形状	ELLIPTICAL	ELLIPTICAL	ELLIPTICAL
封装形式	LONG FORM	LONG FORM	LONG FORM
峰值回流温度（摄氏度）	235	NOT SPECIFIED	NOT SPECIFIED
认证状态	Not Qualified	Not Qualified	Not Qualified
最大重复峰值反向电压	100 V	50 V	150 V
最大反向恢复时间	0.025 µs	0.025 µs	0.025 µs
表面贴装	NO	NO	NO
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	WIRE	WIRE	WIRE
端子位置	AXIAL	AXIAL	AXIAL
处于峰值回流温度下的最长时间	10	NOT SPECIFIED	NOT SPECIFIED
Base Number Matches	1	1	1

BYV27/100

BYV27/100概述

BYV27/100规格参数

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