REVISIONS
LTR
A
DESCRIPTION
Add case outline 2. Add input voltage test. Add footnote
3/
. Editorial changes
throughout.
DATE (YR-MO-DA)
90-03-30
APPROVED
M. Poelking
B
Change boilerplate to add one-part part numbers. Add table IIB for delta limits. -rrp
97-12-08
R. Monnin
C
Add radiation hardened assurance requirements. - lgt
99-03-01
R. Monnin
THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED.
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
REV
SHEET
PREPARED BY
JOSEPH A. KERBY
C
1
C
2
C
3
C
4
C
5
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STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
CHECKED BY
CHARLES E. BESORE
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216
APPROVED BY
MONICA L. POELKING
MICROCIRCUIT, LINEAR, RADIATION
HARDENED, PRECISION INSTRUMENTATION
AMPLIFIER, MONOLITHIC SILICON
DRAWING APPROVAL DATE
88-02-10
AMSC N/A
REVISION LEVEL
C
SIZE
A
SHEET
CAGE CODE
67268
1 OF
14
5962-88539
DSCC FORM 2233
APR 97
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
5962-E118-99
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and
M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the
Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the
PIN.
1.2 PIN. The PIN is as shown in the following examples.
For device classes M and Q:
5962
RHA
designator
(see 1.2.1)
-
88539
01
E
X
Federal
stock class
designator
\
Device
type
(see 1.2.2)
/
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
\/
Drawing number
For device class V:
5962
RHA
designator
(see 1.2.1)
-
88539
01
V
E
X
Federal
stock class
designator
\
Device
type
(see 1.2.2)
/
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and
are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
01
Generic number
AD524
Circuit function
Precision instrumentation amplifier
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as listed
below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q
designators will not be included in the PIN and will not be marked on the device.
Device class
M
Device requirements documentation
Vendor self-certification to the requirements for MIL-STD-883 compliant,
non-JAN class level B microcircuits in accordance with MIL-PRF-38535,
appendix A
Certification and qualification to MIL-PRF-38535
Q or V
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-88539
SHEET
C
2
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
E
2
Descriptive designator
GDIP1-T16 or CDIP2-T16
CQCC1-N20
Terminals
16
20
Package style
Dual-in-line
Square leadless chip carrier
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
1.3 Absolute maximum ratings. 1/
Supply voltage (V
S
) ..........................................................................................
18V dc
Internal power dissipation (P
D
) .........................................................................280 mW
Input voltage ....................................................................................................
V
S
maximum
Storage temperature range (T
STG
)....................................................................-65
C to +150
C
Lead temperature (soldering, 10 seconds) ......................................................+300
C
Thermal resistance
Junction-to-case (
JC
) ...................................................................................See MIL-STD-1835
Junction-to-ambient (
JA
) :
Case outline E.........................................................................................95
C/W
Case outline 2 .........................................................................................150
C/W
1.4 Recommended operating conditions.
Supply voltage (V
S
) ..........................................................................................
6 V dc to
18 V dc
Ambient operating temperature (T
A
).................................................................-55
C to +125
C
1.5 Radiation features.
Neutron ............................................................................................................ 2/
Total dose (Dose rate = 50 – 300 Krads/s) ......................................................
100 K rads (Si)
Latch up ........................................................................................................... 2/
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in
the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the
solicitation.
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ This test is to be conducted only when specified in the purchase order or contract.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-88539
SHEET
C
3
STANDARDS
DEPARTMENT OF DEFENSE
MIL-STD-883 -
MIL-STD-973 -
MIL-STD-1835 -
HANDBOOKS
DEPARTMENT OF DEFENSE
MIL-HDBK-103 -
MIL-HDBK-780 -
List of Standard Microcircuit Drawings (SMD's).
Standard Microcircuit Drawings.
Test Method Standard Microcircuits.
Configuration Management.
Interface Standard For Microcircuit Case Outlines.
(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Block diagram. The block diagram shall be as specified on figure 2.
3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be as specified on figure 3.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space
limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the
RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535.
Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-88539
SHEET
C
4
TABLE I. Electrical performance characteristics.
Conditions 1/
-55
C
T
A
+125
C
unless otherwise
specified
G = 1, V
O
=
10 V
M, D, L, R
Gain error 10
GE
10
G = 10, V
O
=
10 V
M, D, L, R
Gain error 100
GE
100
G = 100, V
O
=
10 V
M, D, L, R
Gain error 1000
GE
1000
G = 1000, V
O
=
10 V
M, D, L, R
Gain error drift 1
Gain error drift 10
Gain error drift 100
Gain error drift 1000
Input offset voltage
TCGE
1
TCGE
10
TCGE
100
TCGE
1000
V
OSI
G = 1, V
O
=
10 V
G = 10, V
O
=
10 V
G = 100, V
O
=
10 V
2/
2/
2/
2, 3
2, 3
2, 3
2, 3
1
01
01
01
01
01
1
01
1
01
1
01
Test
Symbol
Group A
subgroups
Device
type
Limits
Unit
Min
Gain error 1
GE
1
1
01
Max
.05
.05
%
.25
.25
%
.5
.5
%
2.0
2.0
%
5
10
25
50
100
1.0
ppm/
C
ppm/
C
ppm/
C
ppm/
C
G = 1000, V
O
=
10 V 2/
V
IN
= 0 V, T
A
= 25
C
M, D, L, R
V
mV
Input offset voltage drift
Output offset voltage
TCV
OSI
V
OSO
V
IN
= 0 V, G = 1000
V
IN
= 0 V, T
A
= 25
C
2/
2, 3
1
01
01
2
3
25
V/
C
mV
M, D, L, R
Output offset voltage drift
Input bias current
TCV
OSO
I
B
V
IN
= 0 V, G = 1
G=1
2/
2, 3
1
2, 3
M, D, L, R
Input offset current
I
IO
I
IO
= (I
B+
) - (I
B-
)
G=1
M, D, L, R
See footnotes at end of table.
1
1
2, 3
1
01
-35
-50
01
01
-50
-70
50
50
70
1000
35
50
100
V/
C
nA
nA
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-88539
SHEET
C
5
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