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LTC1155M: 产品描述Dual High Side Micropower MOSFET Driver; 文件大小263KB，共16页; 制造商Linear ( ADI ); 官网地址http://www.analog.com/cn/index.html

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LTC1155M概述

Dual High Side Micropower MOSFET Driver

LTC1155M相似产品对比

	LTC1155M	LTC1155MJ8	LTC1155IS8	LTC1155IN8	LTC1155I	LTC1155CS8	LTC1155CN8	LTC1155CJ8	LTC1155	LTC1155C
描述	Dual High Side Micropower MOSFET Driver	Dual High Side Micropower MOSFET Driver	Dual High Side Micropower MOSFET Driver	Dual High Side Micropower MOSFET Driver	Dual High Side Micropower MOSFET Driver	Dual High Side Micropower MOSFET Driver	Dual High Side Micropower MOSFET Driver	Dual High Side Micropower MOSFET Driver	Dual High Side Micropower MOSFET Driver	Dual High Side Micropower MOSFET Driver
是否Rohs认证	-	不符合	不符合	不符合	-	不符合	不符合	不符合	-	-
厂商名称	-	Linear ( ADI )	Linear ( ADI )	Linear ( ADI )	-	Linear ( ADI )	Linear ( ADI )	Linear ( ADI )	-	-
零件包装代码	-	DIP	SOIC	DIP	-	SOIC	DIP	DIP	-	-
包装说明	-	DIP, DIP8,.3	SOP, SOP8,.25	DIP, DIP8,.3	-	SOP, SOP8,.25	DIP, DIP8,.3	DIP, DIP8,.3	-	-
针数	-	8	8	8	-	8	8	8	-	-
Reach Compliance Code	-	unknow	_compli	_compli	-	_compli	_compli	unknow	-	-
ECCN代码	-	EAR99	EAR99	EAR99	-	EAR99	EAR99	EAR99	-	-
高边驱动器	-	YES	YES	YES	-	YES	YES	YES	-	-
接口集成电路类型	-	BUFFER OR INVERTER BASED MOSFET DRIVER	BUFFER OR INVERTER BASED MOSFET DRIVER	BUFFER OR INVERTER BASED MOSFET DRIVER	-	BUFFER OR INVERTER BASED MOSFET DRIVER	BUFFER OR INVERTER BASED MOSFET DRIVER	BUFFER OR INVERTER BASED MOSFET DRIVER	-	-
JESD-30 代码	-	R-GDIP-T8	R-PDSO-G8	R-PDIP-T8	-	R-PDSO-G8	R-PDIP-T8	R-GDIP-T8	-	-
JESD-609代码	-	e0	e0	e0	-	e0	e0	e0	-	-
功能数量	-	2	2	2	-	2	2	2	-	-
端子数量	-	8	8	8	-	8	8	8	-	-
最高工作温度	-	125 °C	85 °C	85 °C	-	70 °C	70 °C	70 °C	-	-
封装主体材料	-	CERAMIC, GLASS-SEALED	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	CERAMIC, GLASS-SEALED	-	-
封装代码	-	DIP	SOP	DIP	-	SOP	DIP	DIP	-	-
封装等效代码	-	DIP8,.3	SOP8,.25	DIP8,.3	-	SOP8,.25	DIP8,.3	DIP8,.3	-	-
封装形状	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	-
封装形式	-	IN-LINE	SMALL OUTLINE	IN-LINE	-	SMALL OUTLINE	IN-LINE	IN-LINE	-	-
峰值回流温度（摄氏度）	-	NOT SPECIFIED	235	NOT SPECIFIED	-	235	NOT SPECIFIED	NOT SPECIFIED	-	-
电源	-	4.5/18 V	4.5/18 V	4.5/18 V	-	4.5/18 V	4.5/18 V	4.5/18 V	-	-
认证状态	-	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	-	-
座面最大高度	-	5.08 mm	1.75 mm	3.937 mm	-	1.75 mm	3.937 mm	5.08 mm	-	-
最大供电电压	-	18 V	18 V	18 V	-	18 V	18 V	18 V	-	-
最小供电电压	-	4.5 V	4.5 V	4.5 V	-	4.5 V	4.5 V	4.5 V	-	-
标称供电电压	-	5 V	5 V	5 V	-	5 V	5 V	5 V	-	-
表面贴装	-	NO	YES	NO	-	YES	NO	NO	-	-
技术	-	CMOS	CMOS	CMOS	-	CMOS	CMOS	CMOS	-	-
温度等级	-	MILITARY	INDUSTRIAL	INDUSTRIAL	-	COMMERCIAL	COMMERCIAL	COMMERCIAL	-	-
端子面层	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	-
端子形式	-	THROUGH-HOLE	GULL WING	THROUGH-HOLE	-	GULL WING	THROUGH-HOLE	THROUGH-HOLE	-	-
端子节距	-	2.54 mm	1.27 mm	2.54 mm	-	1.27 mm	2.54 mm	2.54 mm	-	-
端子位置	-	DUAL	DUAL	DUAL	-	DUAL	DUAL	DUAL	-	-
处于峰值回流温度下的最长时间	-	NOT SPECIFIED	20	NOT SPECIFIED	-	20	NOT SPECIFIED	NOT SPECIFIED	-	-
断开时间	-	60 µs	60 µs	60 µs	-	60 µs	60 µs	60 µs	-	-
接通时间	-	1000 µs	2000 µs	2000 µs	-	1000 µs	1000 µs	1000 µs	-	-
宽度	-	7.62 mm	3.9 mm	7.62 mm	-	3.9 mm	7.62 mm	7.62 mm	-	-

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