电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

CY7C1360A-225BGCT

产品描述Cache SRAM, 256KX36, 2.5ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119
产品类别存储    存储   
文件大小562KB,共28页
制造商Rochester Electronics
官网地址https://www.rocelec.com/
下载文档 详细参数 全文预览

CY7C1360A-225BGCT概述

Cache SRAM, 256KX36, 2.5ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119

CY7C1360A-225BGCT规格参数

参数名称属性值
包装说明BGA,
Reach Compliance Codeunknown
ECCN代码3A991.B.2.A
最长访问时间2.5 ns
其他特性PIPELINED ARCHITECTURE
JESD-30 代码R-PBGA-B119
长度22 mm
内存密度9437184 bit
内存集成电路类型CACHE SRAM
内存宽度36
功能数量1
端子数量119
字数262144 words
字数代码256000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织256KX36
封装主体材料PLASTIC/EPOXY
封装代码BGA
封装形状RECTANGULAR
封装形式GRID ARRAY
并行/串行PARALLEL
座面最大高度2.4 mm
最大供电电压 (Vsup)3.63 V
最小供电电压 (Vsup)3.135 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子形式BALL
端子节距1.27 mm
端子位置BOTTOM
宽度14 mm
Base Number Matches1

文档预览

下载PDF文档
CY7C1360A
CY7C1362A
256K x 36/512K x 18 Synchronous
Pipelined Burst SRAM
Features
Fast access times: 2.5 ns, 3.0 ns, and 3.5 ns
Fast clock speed: 225, 200, 166, and 150 MHz
Fast OE access times: 2.5 ns, 3.0 ns, and 3.5 ns
Optimal for depth expansion (one cycle chip deselect
to eliminate bus contention)
3.3V –5% and +10% power supply
3.3V or 2.5V I/O supply
5V-tolerant inputs except I/Os
Clamp diodes to V
SS
at all inputs and outputs
Common data inputs and data outputs
Byte Write Enable and Global Write control
Multiple chip enables for depth expansion:
three chip enables for A package version and two chip
enables for BG and AJ package versions
Address pipeline capability
Address, data, and control registers
Internally self-timed Write Cycle
Burst control pins (interleaved or linear burst
sequence)
Automatic power-down feature available using ZZ
mode or CE deselect
JTAG boundary scan for BG and AJ package version
Low-profile 119-bump, 14-mm × 22-mm PBGA (Ball Grid
Array) and 100-pin TQFP packages
synchronous peripheral circuitry and a two-bit counter for
internal burst operation. All synchronous inputs are gated by
registers controlled by a positive-edge-triggered Clock Input
(CLK). The synchronous inputs include all addresses, all data
inputs, address-pipelining Chip Enable (CE), depth-expansion
Chip Enables (CE
2
and CE
3
), burst control inputs (ADSC,
ADSP, and ADV), Write Enables (BWa, BWb, BWc, BWd, and
BWE), and global Write (GW). However, the CE
3
chip enable
input is only available for the TA package version.
Asynchronous inputs include the Output Enable (OE) and
burst mode control (MODE). The data outputs (Q), enabled by
OE, are also asynchronous.
Addresses and chip enables are registered with either
Address Status Processor (ADSP) or Address Status
Controller (ADSC) input pins. Subsequent burst addresses
can be internally generated as controlled by the Burst Advance
Pin (ADV).
Address, data inputs, and Write controls are registered on-chip
to initiate self-timed Write cycle. Write cycles can be one to
four bytes wide as controlled by the Write control inputs.
Individual byte Write allows individual byte to be written. BWa
controls DQa. BWb controls DQb. BWc controls DQc. BWd
controls DQd. BWa, BWb, BWc, and BWd can be active only
with BWE being LOW. GW being LOW causes all bytes to be
written. The x18 version only has 18 data inputs/outputs (DQa
and DQb) along with BWa and BWb (no BWc, BWd, DQc, and
DQd).
For the BGA and TQFP AJ package versions, four pins are
used to implement JTAG test capabilities: Test Mode Select
(TMS), Test Data-In (TDI), Test Clock (TCK), and Test
Data-Out (TDO). The JTAG circuitry is used to serially shift
data to and from the device. JTAG inputs use LVTTL/LVCMOS
levels to shift data during this testing mode of operation. The
TA package version does not offer the JTAG capability.
The CY7C1360A and CY7C1362A operate from a +3.3V
power supply. All inputs and outputs are LVTTL-compatible.
Functional Description
The Cypress Synchronous Burst SRAM family employs
high-speed, low-power CMOS designs using advanced
triple-layer polysilicon, double-layer metal technology. Each
memory cell consists of four transistors and two high-valued
resistors.
The CY7C1360A and CY7C1362A SRAMs integrate 262,144
× 36 and 524,288 × 18 SRAM cells with advanced
Selection Guide
7C1360A-225
7C1362A-225
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
2.5
650
10
7C1360A-200
7C1362A-200
3.0
600
10
7C1360A-166
7C1362A-166
3.5
520
10
7C1360A-150
7C1362A-150
3.5
460
10
Unit
ns
mA
mA
Cypress Semiconductor Corporation
Document #: 38-05258 Rev. *C
3901 North First Street
San Jose
CA 95134 • 408-943-2600
Revised January 18, 2003

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2439  1653  1732  157  1489  36  5  47  19  35 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved