OM6516SC
OM6520SC
INSULATED GATE BIPOLAR TRANSISTOR
(IGBT) IN A HERMETIC TO-258AA PACKAGE
1000 Volt, 25 Amp, N-Channel IGBT
In A Hermetic Metal Package
FEATURES
•
•
•
•
•
•
•
•
Isolated IGBTs In A Hermetic Package
High Input Impedance
Low On-Voltage
High Current Capability
High Switching Speed
Low Tail Current
Available With Free Wheeling Diode
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This IGBT power transistor features the high switching speeds of a power MOSFET
and the low on-resistance of a bipolar transistor. It is ideally suited for high power
switching applications such as frequency converters for 3Ø motors, UPS and high
power SMPS.
MAXIMUM RATINGS
@ 25°C Unless Specified Otherwise
PART
NUMBER
OM6516SC
OM6520SC
I
C
(Cont.)
@ 90°C, A
25
25
V
(BR)CES
V
1000
1000
V
CE (sat)
(Typ.)
V
4.0
4.0
T
f
(Typ.)
ns
300
300
q
JC
°C/W
1.0
1.0
P
D
W
125
125
T
J
°C
150
150
3.1
SCHEMATICS
Collector
Collector
.165
.155
MECHANICAL OUTLINE
.695
.685
.270
.240
.045
.035
.835
.815
Gate
Gate
.707
.697
1
C
2
E
3
G
.550
.530
.092 MAX.
Emitter
Emitter
.750
.500
.065
.055
.140 TYP.
.005
OM6516SC
OM6520SC(w/Diode)
.200 TYP.
PACKAGE OPTIONS
NOTE: IGBTs are also available in Z-Tab, dual and quad
pak styles - Please call the factory for more information.
MOD PAK
4 11 R2
Supersedes 2 07 R1
6 PIN SIP
3.1 - 155
3.1
OM6516SC OM6520SC
PRELIMINARY DATA: OM6516SC
IGBT CHARACTERISTICS
Parameter - OFF
V
(BR)CES
Collector Emitter
Breakdown Voltage
I
CES
Zero Gate Voltage
Drain Current
0.25
1.0
±100
mA
mA
nA
Min. Typ. Max. Units Test Conditions
1000
V
V
CE
= 0
I
C
= 250 µA
V
CE
= Max. Rat., V
GE
= 0
V
CE
= 0.8 Max. Rat., V
GE
= 0
T
C
= 125°C
I
GES
Gate Emitter Leakage
Current
Parameter - ON
V
GE(th)
Gate Threshold Voltage
Saturation Voltage
V
CE(sat)
Collector Emitter
Saturation Voltage
Dynamic
g
fs
C
ies
C
oes
C
res
T
d(on)
t
r
T
d(off)
t
f
T
d(off)
t
f
E
off
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Delay Time
Fall Time
Turn-Off Losses
5.5
2000
160
65
50
200
200
300
200
200
1.5
S
pF
pF
pF
nS
nS
nS
nS
nS
nS
V
CEclamp
= 600 V, I
C
= 15 A
V
GE
= 15 V, R
g
= 3.3
V
CE
= 20 V, I
C
= 15 A
V
GE
= 0
V
CE
= 25 V
f = 1 mHz
V
CC
= 600 V, I
C
= 15 A
V
GE
= 15 V, R
g
= 3.3 ,
T
j
= 125°C
4.0
4.5
V
4.5
3.0
6.5
V
V
V
CE
= V
GE
, I
C
= 1 mA
V
GE
= 15 V, I
C
= 15 A
T
C
= 25°C
V
GE
= 15 V, I
C
= 15 A
T
C
= 125°C
V
CE(sat)
Collector Emitter
V
GE
= ±20 V
V
CE
= 0 V
PRELIMINARY DATA: OM6520SC
IGBT CHARACTERISTICS
Parameter - OFF
(see Note 1)
V
(BR)CES
Collector Emitter
Breakdown Voltage
I
CES
Zero Gate Voltage
Drain Current
I
GES
Gate Emitter Leakage
Current
Parameter - ON
V
GE(th)
Gate Threshold Voltage
Saturation Voltage
V
CE(sat)
Collector Emitter
Saturation Voltage
Dynamic
g
fs
C
ies
C
oes
C
res
T
d(on)
t
r
T
d(off)
t
f
T
d(off)
t
f
E
off
V
f
I
r
t
rr
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Delay Time
Fall Time
Turn-Off Losses
Maximum Forward Voltage
Maximum Reverse Current
Reverse Recovery Time
5.5
2000
160
65
50
200
200
300
200
200
1.5
1.85
1.70
500
7.0
50
S
pF
pF
pF
nS
nS
nS
nS
nS
nS
V
CEclamp
= 600 V, I
C
= 15 A
V
GE
= 15 V, R
g
= 3.3
V
CE
= 20 V, I
C
= 15 A
V
GE
= 0
V
CE
= 25 V
f = 1 mHz
V
CC
= 600 V, I
C
= 15 A
V
GE
= 15 V, R
g
= 3.3 ,
T
j
= 125°C
4.0
4.5
V
4.5
3.0
6.5
V
V
V
CE
= V
GE
, I
C
= 1 mA
V
GE
= 15 V, I
C
= 15 A
T
C
= 25°C
V
GE
= 15 V, I
C
= 15 A
T
C
= 125°C
V
CE(sat)
Collector Emitter
0.25
1.0
±100
mA
mA
nA
Min. Typ. Max. Units Test Conditions
1000
V
V
CE
= 0
I
C
= 250 µA
V
CE
= Max. Rat., V
GE
= 0
V
CE
= 0.8 Max. Rat., V
GE
= 0
T
C
= 125°C
V
GE
= ±20 V
V
CE
= 0 V
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
Switching-Resistive Load
Switching-Resistive Load
Switching-Inductive Load
Switching-Inductive Load
mWs L = 1 mH, T
j
= 125°C
mWs L = 1 mH, T
j
= 125°C
V
V
µA
mA
nS
I
F
= 30 A, T
C
= 25°C
I
F
= 30 A, T
C
= 150°C
V
R
= 1000 V, T
C
= 25°C
V
R
= 800 V, T
C
= 125°C
I
F
= 1 A, d
i
/ d
t
= -15 A µ/S
V
R
= 30 V, T
j
= 25°C
DIODE CHARACTERISTICS
Note 1: Limited by diode I
r
characteristic.
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