CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 840V, T
J
= 125
o
C, R
G
= 51Ω.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
CES
I
CES
TEST CONDITIONS
I
C
= 250µA, V
GE
= 0V
V
CE
= BV
CES
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 150
o
C
MIN
1200
-
-
-
-
-
6.0
-
12
-
-
-
-
-
-
-
-
-
TYP
-
-
50
-
2.45
3.6
6.8
-
-
10.2
24
32
21
11
185
100
370
195
MAX
-
250
-
0.6
2.7
4.2
-
±250
-
-
30
39
25
15
240
130
500
270
UNITS
V
µA
µA
mA
V
V
V
nA
A
V
nC
nC
ns
ns
ns
ns
µJ
µJ
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 2.3A,
V
GE
= 15V
T
C
= 25
o
C
T
C
= 150
o
C
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
GE(TH)
I
GES
SSOA
V
GEP
Q
G(ON)
I
C
= 40µA, V
CE
= V
GE
V
GE
=
±20V
T
J
= 150
o
C, R
G
= 51Ω, V
GE
= 15V,
L = 400µH, V
CE(PK)
= 1200V
I
C
= 2.3A, V
CE
= 0.5 BV
CES
I
C
= 10A,
V
CE
= 0.5 BV
CES
V
GE
= 15V
V
GE
= 20V
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON
E
OFF
IGBT and Diode at T
J
= 25
o
C
I
CE
= 2.3A
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 51Ω
L = 5mH
Test Circuit (Figure 20)
2
HGTP2N120BND, HGT1S2N120BNDS
Electrical Specifications
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON
E
OFF
V
EC
t
rr
I
EC
= 2.3A
I
EC
= 2.3A, dl
EC
/dt = 200A/µs
I
EC
= 1A, dl
EC
/dt = 200A/µs
Thermal Resistance Junction To Case
R
θJC
IGBT
Diode
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
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