HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3
Data Sheet
January 2000
File Number
4412.2
14A, 600V, UFS Series N-Channel IGBTs
The HGTD7N60B3S, HGT1S7N60B3S and HGTP7N60B3
are MOS gated high voltage switching devices combining the
best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and the
low on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25
o
C and 150
o
C.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction
losses are essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49190.
Features
• 14A, 600V, T
C
= 25
o
C
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . .120ns at T
J
= 150
o
C
• Short Circuit Rating
• Low Conduction Loss
Packaging
JEDEC TO-220AB
E
COLLECTOR
(FLANGE)
C
G
Ordering Information
PART NUMBER
HGTD7N60B3S
HGT1S7N60B3S
HGTP7N60B3
PACKAGE
TO-252AA
TO-263AB
TO-220AB
BRAND
G7N60B
G7N60B3
G7N60B3
COLLECTOR
(FLANGE)
G
E
JEDEC TO-263AB
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA and TO-263AB variant in tape and reel, e.g.,
HGTD7N60B3S9A.
Symbol
C
JEDEC TO-252AA
COLLECTOR
(FLANGE)
G
G
E
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Rev. A
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
ALL TYPES
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
ARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Short Circuit Withstand Time (Note 2) at V
GE
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
Short Circuit Withstand Time (Note 2) at V
GE
= 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
600
14
7
56
±
20
±
30
35A at 600V
60
0.476
100
-55 to 150
260
2
12
UNITS
V
A
A
A
V
V
W
W/
o
C
mJ
o
C
o
C
µ
s
µ
s
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Single Pulse; Pulse width limited by maximum junction temperature. Parts may current limit at less than I
CM
.
2. V
CE
= 360V, T
J
= 125
o
C, R
G
= 50
Ω
.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
CES
BV
ECS
I
CES
TEST CONDITIONS
I
C
= 250
µ
A, V
GE
= 0V
I
C
= 3mA, V
GE
= 0V
V
CE
= BV
CES
T
C
= 25
o
C
T
C
= 150
o
C
MIN
600
15
-
-
-
-
3.0
-
V
CE
= 480V
V
CE
= 600V
42
35
TYP
-
28
-
-
1.8
2.1
5.1
-
-
-
MAX
-
-
100
2.0
2.1
2.4
6.0
±
100
-
-
UNITS
V
V
µ
A
mA
V
V
V
nA
A
A
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C110
,
V
GE
= 15V
T
C
= 25
o
C
T
C
= 150
o
C
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
GE(TH)
I
GES
SSOA
I
C
= 250
µ
A, V
CE
= V
GE
V
GE
=
±
20V
T
J
= 150
o
C
R
G
= 50
Ω
V
GE
= 15V
L = 100
µ
H
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
GEP
Q
G(ON)
I
C
= I
C110
, V
CE
= 0.5 BV
CES
I
C
= I
C110
,
V
CE
= 0. 5BV
CES
V
GE
= 15V
V
GE
= 20V
-
-
-
-
-
-
-
-
-
-
7.7
23
30
26
21
130
60
72
160
120
-
28
37
-
-
160
80
-
200
200
V
nC
nC
ns
ns
ns
ns
µ
J
µ
J
µ
J
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 3)
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
IGBT and Diode Both at T
J
= 25
o
C
I
CE
= I
C110
, V
CE
= 0.8 BV
CES
,
V
GE
= 15V, R
G
= 50
Ω
, L = 2mH
Test Circuit (Figure 17)
©2001 Fairchild Semiconductor Corporation
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Rev. A
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3
Electrical Specifications
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 3)
Thermal Resistance Junction To Case
NOTE:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due
to diode recovery.
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the Turn-On loss of the IGBT only. E
ON2
is the Turn-On loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 17.
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
R
θJC
TEST CONDITIONS
IGBT and Diode Both at T
J
= 150
o
C
I
CE
= I
C110
, V
CE
= 0.8 BV
CES
,
V
GE
= 15V, R
G
=50Ω, L = 2mH
Test Circuit (Figure 17)
MIN
-
-
-
-
-
-
-
-
TYP
24
22
230
120
80
310
350
-
MAX
-
-
295
175
-
350
500
2.1
UNITS
ns
ns
ns
ns
µJ
µJ
µJ
o
C/W
Typical Performance Curves
16
I
CE
, DC COLLECTOR CURRENT (A)
Unless Otherwise Specified
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
= 15V
14
12
10
8
6
4
2
0
25
50
75
100
125
150
50
T
J
= 150
o
C, R
G
= 50Ω, V
GE
= 15V
40
30
20
10
0
0
100
200
300
400
500
600
700
T
C
, CASE TEMPERATURE (
o
C)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
©2001 Fairchild Semiconductor Corporation
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Rev. A
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3
Typical Performance Curves
400
f
MAX
, OPERATING FREQUENCY (kHz)
Unless Otherwise Specified
(Continued)
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µs)
T
J
= 150
o
C, R
G
= 50Ω, L = 2mH, V
CE
= 480V
T
C
75
o
C
75
o
C
110
o
C
110
o
C
V
GE
15V
10V
15V
10V
V
CE
= 360V, R
G
= 50Ω, T
J
= 125
o
C
100
14
I
SC
10
80
60
10
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
ØJC
= 2.1
o
C/W, SEE NOTES
6
t
SC
40
1
2
10
11
12
13
14
15
V
GE
, GATE TO EMITTER VOLTAGE (V)
20
1
2
3
4
5
6
8
10
15
I
CE
, COLLECTOR TO EMITTER CURRENT (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
30
25
20
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V
GE
= 10V
40
30
T
C
= 150
o
C
T
C
= -55
o
C
T
C
= -55
o
C
15
T
C
= 150
o
C
T
C
= 25
o
C
20
T
C
= 25
o
C
10
5
0
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
10
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V
GE
= 15V
0
1
2
3
4
5
6
7
8
0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON STATE VOLTAGE
1600
E
OFF
, TURN-OFF ENERGY LOSS (µJ)
E
ON2
, TURN-ON ENERGY LOSS (µJ)
R
G
= 50Ω, L = 2mH, V
CE
= 480V
T
J
= 150
o
C, V
GE
= 10V
T
J
= 150
o
C, V
GE
= 15V
800
T
J
= 25
o
C, V
GE
= 10V
T
J
= 25
o
C, V
GE
= 15V
400
1000
R
G
= 50Ω, L = 2mH, V
CE
= 480V
800
T
J
= 150
o
C, V
GE
= 10V AND 15V
600
1200
400
200
T
J
= 25
o
C, V
GE
= 10V AND 15V
0
1
3
5
7
9
11
13
15
0
1
3
5
7
9
11
13
15
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Rev. A
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
18
100
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3
Typical Performance Curves
60
t
dI
, TURN-ON DELAY TIME (ns)
R
G
= 50Ω, L = 2mH, V
CE
= 480V
Unless Otherwise Specified
(Continued)
140
120
R
G
= 50Ω, L = 2mH, V
CE
= 480V
50
t
rI
, RISE TIME (ns)
T
J
= 150
o
C, V
GE
= 10V
T
J
= 25
o
C, V
GE
= 10V
T
J
= 25
o
C, V
GE
= 15V
100
80
60
40
20
0
T
J
= 25
o
C and 150
o
C, V
GE
= 15V
1
3
5
7
9
11
13
15
T
J
= 150
o
C, V
GE
= 10V
T
J
= 25
o
C, V
GE
= 10V
40
30
20
T
J
= 150
o
C, V
GE
= 15V
10
1
3
5
7
9
11
13
15
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
250
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
120
R
G
= 50Ω, L = 2mH, V
CE
= 480V
R
G
= 50Ω, L = 2mH, V
CE
= 480V
T
J
= 150
o
C, V
GE
= 15V
T
J
= 150
o
C, V
GE
= 10V
150
T
J
= 25
o
C, V
GE
= 15V
100
T
J
= 25
o
C, V
GE
= 10V
50
1
t
fI
, FALL TIME (ns)
200
100
T
J
= 150
o
C, V
GE
= 10V and 15V
80
60
T
J
= 25
o
C, V
GE
= 10V and 15V
9
11
13
15
40
1
3
5
7
9
11
13
15
3
5
7
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
40
15
V
GE
, GATE TO EMITTER VOLTAGE (V)
DUTY CYCLE = < 0.5%
PULSE DURATION = 250µs
V
CE
= 10V
T
C
= 25
o
C
I
g(REF)
= 0.758mA, R
L
= 86Ω, T
C
= 25
o
C
32
12
V
CE
= 200V
V
CE
= 600V
24
9
16
T
C
= 150
o
C
8
T
C
= -55
o
C
6
8
10
12
14
6
V
CE
= 400V
3
0
0
0
4
8
12
16
20
24
28
V
GE
, GATE TO EMITTER VOLTAGE (V)
Q
G
, GATE CHARGE (nC)
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Rev. A
微控制器 MCU
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