电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

5962-9317706VTC

产品描述FIFO, 16KX9, 15ns, Asynchronous, CMOS, DIP-28
产品类别存储    存储   
文件大小1MB,共20页
制造商e2v technologies
下载文档 详细参数 全文预览

5962-9317706VTC概述

FIFO, 16KX9, 15ns, Asynchronous, CMOS, DIP-28

5962-9317706VTC规格参数

参数名称属性值
厂商名称e2v technologies
零件包装代码DIP
包装说明DIP,
针数28
Reach Compliance Codeunknown
ECCN代码EAR99
最长访问时间15 ns
其他特性RETRANSMIT
周期时间25 ns
JESD-30 代码R-XDIP-T28
JESD-609代码e4
长度27.94 mm
内存密度147456 bit
内存宽度9
功能数量1
端子数量28
字数16384 words
字数代码16000
工作模式ASYNCHRONOUS
最高工作温度125 °C
最低工作温度-55 °C
组织16KX9
可输出NO
封装主体材料UNSPECIFIED
封装代码DIP
封装形状RECTANGULAR
封装形式IN-LINE
并行/串行PARALLEL
认证状态Not Qualified
筛选级别MIL-PRF-38535 Class V
座面最大高度5.84 mm
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装NO
技术CMOS
温度等级MILITARY
端子面层GOLD
端子形式THROUGH-HOLE
端子节距2.54 mm
端子位置DUAL
宽度7.62 mm
Base Number Matches1

文档预览

下载PDF文档
Features
First-in First-out Dual Port Memory
16384 bits x 9 Organization
Fast Flag and Access Times: 15, 30 ns
Wide Temperature Range: -55°C to +125°C
Programmable Half Full Flag
Fully Expandable by Word Width or Depth
Asynchronous Read/Write Operations
Empty, Full and Half Flags in Single Device Mode
Retransmit Capability
Bi-directional Applications
Battery Back-up Operation: 2V Data Retention
TTL Compatible
Single 5V + 10% Power Supply
QML Q and V with SMD 5962-93177
Description
The M672061H implements a first-in first-out algorithm, featuring asynchronous
read/write operations. The FULL and EMPTY flags prevent data overflow and under-
flow. The Expansion logic allows unlimited expansion in word size and depth with no
timing penalties. Twin address pointers automatically generate internal read and write
addresses, and no external address information are required for the Atmel FIFOs.
Address pointers are automatically incremented with the write pin and read pin. The 9
bits wide data are used in data communications applications where a parity bit for
error checking is necessary. The Retransmit pin resets the Read pointer to zero with-
out affecting the write pointer. This is very useful for retransmitting data when an error
is detected in the system.
Using an array of eight transistors (8T) memory cell, the M672061H combines an
extremely low standby supply current (typ = 0.1 µA) with a fast access time at 15 ns
over the full temperature range. All versions offer battery backup data retention capa-
bility with a typical power consumption at less than 2 µW.
For military/space applications that demand superior levels of performance and reli-
ability the M672061H is processed according to the methods of the latest revision of
the MIL PRF 38535 (Q and V) or ESA SCC 9000.
Rad. Tolerant
High Speed
16 Kb x 9
Parallel FIFO with
Programmable
Flag
M672061H
4144H–AERO–06/03
1

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 64  729  2448  337  223  7  41  38  45  48 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved