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IS42S32400-6TLI: 产品描述Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86; 产品类别存储存储; 文件大小825KB，共60页; 制造商Integrated Silicon Solution ( ISSI ); 标准

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IS42S32400-6TLI概述

Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86

IS42S32400-6TLI规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	Integrated Silicon Solution ( ISSI )
零件包装代码	TSOP2
包装说明	TSOP2, TSSOP86,.46,20
针数	86
Reach Compliance Code	compliant
ECCN代码	EAR99
访问模式	FOUR BANK PAGE BURST
最长访问时间	5.4 ns
其他特性	AUTO/SELF REFRESH
最大时钟频率 (fCLK)	166 MHz
I/O 类型	COMMON
交错的突发长度	1,2,4,8
JESD-30 代码	R-PDSO-G86
JESD-609代码	e3
长度	22.22 mm
内存密度	134217728 bit
内存集成电路类型	SYNCHRONOUS DRAM
内存宽度	32
湿度敏感等级	3
功能数量	1
端口数量	1
端子数量	86
字数	4194304 words
字数代码	4000000
工作模式	SYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	4MX32
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	TSOP2
封装等效代码	TSSOP86,.46,20
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE
峰值回流温度（摄氏度）	260
电源	3.3 V
认证状态	Not Qualified
刷新周期	4096
座面最大高度	1.2 mm
自我刷新	YES
连续突发长度	1,2,4,8,FP
最大待机电流	0.001 A
最大压摆率	0.18 mA
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	3 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Matte Tin (Sn)
端子形式	GULL WING
端子节距	0.5 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	40
宽度	10.16 mm
Base Number Matches	1

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IS42S32400

4M x 32

128Mb SYNCHRONOUS DRAM

PRELIMINARY INFORMATION

MARCH 2010

FEATURES

• Clock frequency: 166, 143 MHz

• Fully synchronous; all signals referenced to a

positive clock edge

• Internal bank for hiding row access/precharge

• Power supply

IS42S32400

• LVTTL interface

• Programmable burst length

– (1, 2, 4, 8, full page)

• Programmable burst sequence:

Sequential/Interleave

• Auto Refresh (CBR)

• Self Refresh

• 4096 refresh cycles every 64 ms

• Random column address every clock cycle

• Programmable CAS

latency (2, 3 clocks)

• Burst read/write and burst read/single write

operations capability

• Burst termination by burst stop and precharge

command

• Available in Industrial Temperature

• Available in 86-pin TSOP-II and 90-ball FBGA

• Available in Lead-free

ddq

3.3V 3.3V

OVERVIEW

ISSI

's 128Mb Synchronous DRAM achieves high-speed

data transfer using pipeline architecture. All inputs and

outputs signals refer to the rising edge of the clock input.

The 128Mb SDRAM is organized in 1Meg x 32 bit x 4

Banks.

KEY TIMING PARAMETERS

Parameter

Clk Cycle Time

CAS Latency = 3

CAS Latency = 2

Clk Frequency

CAS Latency = 3

CAS Latency = 2

Access Time from Clock

CAS Latency = 3

CAS Latency = 2

-6

166

125

5.4

6.5

-7

143

100

5.4

6.5

Unit

Mhz

out notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain

the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc.

- www.issi.com

Rev. 00A

03/04/2010

IS42S32400-6TLI相似产品对比

	IS42S32400-6TLI	IS42S32400-7TLI	IS42S32400-6TL	IS42S32400-7TI	IS42S32400-6BLI	IS42S32400-7TL	IS42S32400-6BL	IS42S32400-7BL	IS42S32400-7BLI
描述	Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86	Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86	Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86	Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, TSOP2-86	Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MO-207, FBGA-90	Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86	Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MO-207, FBGA-90	Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MO-207, FBGA-90	Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MO-207, FBGA-90
是否无铅	不含铅	不含铅	不含铅	含铅	不含铅	不含铅	不含铅	不含铅	不含铅
是否Rohs认证	符合	符合	符合	不符合	符合	符合	符合	符合	符合
零件包装代码	TSOP2	TSOP2	TSOP2	TSOP2	DSBGA	TSOP2	DSBGA	DSBGA	DSBGA
包装说明	TSOP2, TSSOP86,.46,20	TSOP2, TSSOP86,.46,20	TSOP2, TSSOP86,.46,20	TSOP2, TSSOP86,.46,20	TFBGA, BGA90,9X15,32	TSOP2, TSSOP86,.46,20	TFBGA, BGA90,9X15,32	TFBGA, BGA90,9X15,32	TFBGA, BGA90,9X15,32
针数	86	86	86	86	90	86	90	90	90
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
访问模式	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
最长访问时间	5.4 ns	5.4 ns	5.4 ns	5.4 ns	5.4 ns	5.4 ns	5.4 ns	5.4 ns	5.4 ns
其他特性	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
最大时钟频率 (fCLK)	166 MHz	143 MHz	166 MHz	143 MHz	166 MHz	143 MHz	166 MHz	143 MHz	143 MHz
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
交错的突发长度	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8
JESD-30 代码	R-PDSO-G86	R-PDSO-G86	R-PDSO-G86	R-PDSO-G86	R-PBGA-B90	R-PDSO-G86	R-PBGA-B90	R-PBGA-B90	R-PBGA-B90
JESD-609代码	e3	e3	e3	e0	e1	e3	e1	e1	e1
长度	22.22 mm	22.22 mm	22.22 mm	22.22 mm	13 mm	22.22 mm	13 mm	13 mm	13 mm
内存密度	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit
内存集成电路类型	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
内存宽度	32	32	32	32	32	32	32	32	32
湿度敏感等级	3	3	3	3	3	3	3	3	3
功能数量	1	1	1	1	1	1	1	1	1
端口数量	1	1	1	1	1	1	1	1	1
端子数量	86	86	86	86	90	86	90	90	90
字数	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words
字数代码	4000000	4000000	4000000	4000000	4000000	4000000	4000000	4000000	4000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	85 °C	85 °C	70 °C	85 °C	85 °C	70 °C	70 °C	70 °C	85 °C
最低工作温度	-40 °C	-40 °C	-	-40 °C	-40 °C	-	-	-	-40 °C
组织	4MX32	4MX32	4MX32	4MX32	4MX32	4MX32	4MX32	4MX32	4MX32
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSOP2	TSOP2	TSOP2	TSOP2	TFBGA	TSOP2	TFBGA	TFBGA	TFBGA
封装等效代码	TSSOP86,.46,20	TSSOP86,.46,20	TSSOP86,.46,20	TSSOP86,.46,20	BGA90,9X15,32	TSSOP86,.46,20	BGA90,9X15,32	BGA90,9X15,32	BGA90,9X15,32
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度（摄氏度）	260	260	260	NOT SPECIFIED	260	260	260	260	260
电源	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
刷新周期	4096	4096	4096	4096	4096	4096	4096	4096	4096
座面最大高度	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
自我刷新	YES	YES	YES	YES	YES	YES	YES	YES	YES
连续突发长度	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP
最大待机电流	0.001 A	0.001 A	0.001 A	0.001 A	0.001 A	0.001 A	0.001 A	0.001 A	0.001 A
最大压摆率	0.18 mA	0.16 mA	0.18 mA	0.16 mA	0.18 mA	0.16 mA	0.18 mA	0.16 mA	0.16 mA
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL
端子面层	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Tin/Silver/Copper (Sn/Ag/Cu)	Matte Tin (Sn)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	BALL	GULL WING	BALL	BALL	BALL
端子节距	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.8 mm	0.5 mm	0.8 mm	0.8 mm	0.8 mm
端子位置	DUAL	DUAL	DUAL	DUAL	BOTTOM	DUAL	BOTTOM	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	40	40	40	NOT SPECIFIED	40	40	40	40	40
宽度	10.16 mm	10.16 mm	10.16 mm	10.16 mm	8 mm	10.16 mm	8 mm	8 mm	8 mm
厂商名称	Integrated Silicon Solution ( ISSI )	-	Integrated Silicon Solution ( ISSI )	-	Integrated Silicon Solution ( ISSI )	-	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
Base Number Matches	1	1	1	1	1	1	1	-	-

IS42S32400-6TLI

IS42S32400-6TLI概述

IS42S32400-6TLI规格参数

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IS42S32400-6TLI相似产品对比

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