FLLD261
HIGH CONDUCTANCE LOW LEAKAGE DIODE
P
D
. . . .350 mW @ T
A
= 25 Deg C
B
V
. . . .200 V (M
IN
) @ I
R
= 5 uA
ABSOLUTE MAXIMUM RATINGS
(NOTE 1)
TEMPERATURES
Storage Temperature
Operating Junction Temperature
-55 to +150 Degrees C
-55 to +150 Degrees C
PACKAGE
TO-236AB (Low)
3
P8A
1
2
CONNECTION DIAGRAMS
3
POWER DISSIPATION
(NOTES 2 & 3)
Total Device Dissipation at TA = 25 Deg C
Derating Factor per Degree C
350 mW
2.8 mW
1
2
VOLTAGES & CURRENTS
WIV
Working Inverse Voltage
IO
Average Rectified Current
IF
DC Forward Current
if
Recurrent Peak Forward Current
if (surge) Peak Forward Surge Current
Pulse width = 1 second
Pulse width = 1 microsec
100 V
250 mA
600 mA
700 mA
1.0 A
3.0 A
ELECTRICAL CHARACTERISTICS
(25 Degrees C Ambient Temperature unless otherwise stated)
SYM
B
V
I
R
V
F
C
T
T
RR
T
FR
V
FM
CHARACTERISTICS
Breakdown Voltage
Reverse Voltage Leakage Current
Forward Voltage
Diode Capacitance
Reverse Recovery Time
Forward Recovery Time
Peak Forward Voltage
MIN
200
MAX
UNITS
V
TEST CONDITIONS
I
R
=
5.0 uA
T
A
= 150 Deg C
5.0
5.0
1.40
4.0
400
10
0.9
Typ
nA
uA
V
pF
ns
ns
V
V
R
= 100 V
V
R
= 100 V
I
F
=
V
R
=
200 mA
1.0 V
f = 1.0 MH
Z
I
F
= I
R
= 50 to 400 mA
I
RR
= 10% I
R
R
L
= 100 ohms
I
F
=
10 mA
I
F
=
10 mA
Rise Time = 5 ns +/-20%
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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EcoSPARK™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
DISCLAIMER
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench
QFET™
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QT Optoelectronics™
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SILENT SWITCHER
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H2
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