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IS43LR16320B-75BL: 产品描述DDR DRAM, 32MX16, 6ns, CMOS, PBGA60, 8 X 10 MM, LEAD FREE, MO-207, TFBGA-60; 产品类别存储存储; 文件大小2MB，共42页; 制造商Integrated Silicon Solution ( ISSI ); 标准

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IS43LR16320B-75BL概述

DDR DRAM, 32MX16, 6ns, CMOS, PBGA60, 8 X 10 MM, LEAD FREE, MO-207, TFBGA-60

IS43LR16320B-75BL规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	Integrated Silicon Solution ( ISSI )
零件包装代码	DSBGA
包装说明	TFBGA, BGA60,9X10,32
针数	60
Reach Compliance Code	compliant
ECCN代码	EAR99
访问模式	FOUR BANK PAGE BURST
最长访问时间	6 ns
其他特性	AUTO/SELF REFRESH
最大时钟频率 (fCLK)	133 MHz
I/O 类型	COMMON
交错的突发长度	2,4,8,16
JESD-30 代码	R-PBGA-B60
JESD-609代码	e1
长度	10 mm
内存密度	536870912 bit
内存集成电路类型	DDR DRAM
内存宽度	16
功能数量	1
端口数量	1
端子数量	60
字数	33554432 words
字数代码	32000000
工作模式	SYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	32MX16
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	TFBGA
封装等效代码	BGA60,9X10,32
封装形状	RECTANGULAR
封装形式	GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度（摄氏度）	260
电源	1.8 V
认证状态	Not Qualified
刷新周期	8192
座面最大高度	1.1 mm
自我刷新	YES
连续突发长度	2,4,8,16
最大待机电流	0.00001 A
最大压摆率	0.1 mA
最大供电电压 (Vsup)	1.95 V
最小供电电压 (Vsup)	1.7 V
标称供电电压 (Vsup)	1.8 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	Tin/Silver/Copper (Sn/Ag/Cu)
端子形式	BALL
端子节距	0.8 mm
端子位置	BOTTOM
处于峰值回流温度下的最长时间	40
宽度	8 mm
Base Number Matches	1

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IS43LR16320B, IS46LR16320B

Advanced Information

16Bits

4Banks Mobile DDR SDRAM

Description

The IS43/46LR16320B is a 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 8,388,608 words x

16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

on a 16bit bus. The double data rate architecture is essentially a 2

prefetch architecture with an interface designed to transfer two data

words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock.

The data paths are internally pipelined and 2n-bits prefetched to achieve very high bandwidth. All input and output voltage levels are

compatible with LVCMOS.

Features

• JEDEC standard 1.8V power supply.

• VDD = 1.8V, VDDQ = 1.8V

• Four internal banks for concurrent operation

• MRS cycle with address key programs

- CAS latency 2, 3 (clock)

- Burst length (2, 4, 8, 16)

- Burst type (sequential & interleave)

• Fully differential clock inputs (CK, /CK)

• All inputs except data & DM are sampled at the rising

edge of the system clock

• Data I/O transaction on both edges of data strobe

• Bidirectional data strobe per byte of data (DQS)

• DM for write masking only

• Edge aligned data & data strobe output

• Center aligned data & data strobe input

• 64ms refresh period (8K cycle)

• Auto & self refresh

• Concurrent Auto Precharge

• Maximum clock frequency up to 166MHZ

• Maximum data rate up to 333Mbps/pin

• Special Power Saving supports.

- PASR (Partial Array Self Refresh)

- Auto TCSR (Temperature Compensated Self Refresh)

- Deep Power Down Mode

- Programmable Driver Strength Control by Full Strength

or 1/2, 1/4, 1/8 of Full Strength

• LVCMOS compatible inputs/outputs

• 60-Ball FBGA package

products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services

described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information

and before placing orders for products.

Rev.00B | Dec. 2010

www.issi.com

- dram@issi.com

IS43LR16320B-75BL相似产品对比

	IS43LR16320B-75BL	IS46LR16320B-75BLA2	IS43LR16320B-75BLI	IS46LR16320B-75BLA1
描述	DDR DRAM, 32MX16, 6ns, CMOS, PBGA60, 8 X 10 MM, LEAD FREE, MO-207, TFBGA-60	32MX16 DDR DRAM, 6ns, PBGA60, 8 X 10 MM, LEAD FREE, MO-207, TFBGA-60	DDR DRAM, 32MX16, 6ns, CMOS, PBGA60, 8 X 10 MM, LEAD FREE, MO-207, TFBGA-60	32MX16 DDR DRAM, 6ns, PBGA60, 8 X 10 MM, LEAD FREE, MO-207, TFBGA-60
是否无铅	不含铅	不含铅	不含铅	不含铅
是否Rohs认证	符合	符合	符合	符合
厂商名称	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
零件包装代码	DSBGA	DSBGA	DSBGA	DSBGA
包装说明	TFBGA, BGA60,9X10,32	TFBGA, BGA60,9X10,32	TFBGA, BGA60,9X10,32	TFBGA, BGA60,9X10,32
针数	60	60	60	60
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99
访问模式	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
最长访问时间	6 ns	6 ns	6 ns	6 ns
其他特性	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
最大时钟频率 (fCLK)	133 MHz	133 MHz	133 MHz	133 MHz
I/O 类型	COMMON	COMMON	COMMON	COMMON
交错的突发长度	2,4,8,16	2,4,8,16	2,4,8,16	2,4,8,16
JESD-30 代码	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60
JESD-609代码	e1	e1	e1	e1
长度	10 mm	10 mm	10 mm	10 mm
内存密度	536870912 bit	536870912 bit	536870912 bit	536870912 bit
内存集成电路类型	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
内存宽度	16	16	16	16
功能数量	1	1	1	1
端口数量	1	1	1	1
端子数量	60	60	60	60
字数	33554432 words	33554432 words	33554432 words	33554432 words
字数代码	32000000	32000000	32000000	32000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	70 °C	105 °C	85 °C	85 °C
最低工作温度	-	-40 °C	-40 °C	-40 °C
组织	32MX16	32MX16	32MX16	32MX16
输出特性	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TFBGA	TFBGA	TFBGA	TFBGA
封装等效代码	BGA60,9X10,32	BGA60,9X10,32	BGA60,9X10,32	BGA60,9X10,32
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度（摄氏度）	260	260	260	260
电源	1.8 V	1.8 V	1.8 V	1.8 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
刷新周期	8192	8192	8192	8192
座面最大高度	1.1 mm	1.1 mm	1.1 mm	1.1 mm
自我刷新	YES	YES	YES	YES
连续突发长度	2,4,8,16	2,4,8,16	2,4,8,16	2,4,8,16
最大待机电流	0.00001 A	0.00001 A	0.00001 A	0.00001 A
最大压摆率	0.1 mA	0.1 mA	0.1 mA	0.1 mA
最大供电电压 (Vsup)	1.95 V	1.95 V	1.95 V	1.95 V
最小供电电压 (Vsup)	1.7 V	1.7 V	1.7 V	1.7 V
标称供电电压 (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V
表面贴装	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
端子面层	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)
端子形式	BALL	BALL	BALL	BALL
端子节距	0.8 mm	0.8 mm	0.8 mm	0.8 mm
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	40	40	40	40
宽度	8 mm	8 mm	8 mm	8 mm
Base Number Matches	1	1	1	1

IS43LR16320B-75BL

IS43LR16320B-75BL概述

IS43LR16320B-75BL规格参数

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