CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE(PK)
= 360V, T
J
= 125
o
C, R
G
= 25Ω.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
CES
BV
ECS
I
CES
V
CE(SAT)
V
GE(TH)
I
GES
SSOA
TEST CONDITIONS
I
C
= 250µA, V
GE
= 0V
I
C
= 10mA, V
GE
= 0V
V
CE
= BV
CES
V
CE
= BV
CES
I
C
= I
C110
,
V
GE
= 15V
I
C
= 250µA,
V
CE
= V
GE
V
GE
=
±20V
T
J
= 150
o
C
R
G
= 25Ω
V
GE
= 15V
L = 100µH
I
C
= I
C110
,
V
CE
= 0.5 BV
CES
V
CE(PK)
= 480V
V
CE(PK)
= 600V
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= 25
o
C
MIN
600
24
-
-
-
-
3.0
-
80
24
TYP
-
30
-
-
1.65
1.85
5.0
-
-
-
MAX
-
-
250
1.0
2.0
2.2
6.0
±100
-
-
UNITS
V
V
µA
mA
V
V
V
nA
A
A
Collector to Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Thermal Resistance
NOTE:
V
GEP
Q
G(ON)
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON
E
OFF
R
θJC
I
C
= I
C110
, V
CE
= 0.5 BV
CES
V
GE
= 15V
V
GE
= 20V
-
-
-
-
-
-
-
-
-
-
7.6
48
62
14
16
270
210
380
900
-
-
55
71
-
-
400
275
-
-
1.2
V
nC
nC
ns
ns
ns
ns
µJ
µJ
o
C/W
T
J
= 150
o
C,
I
CE
= I
C110,
V
CE(PK)
= 0.8 BV
CES,
V
GE
= 15V,
R
G
= 25Ω,
L = 100µH
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). The HGTP12N60C3 and HGT1S12N60C3S were tested per JEDEC standard
No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Turn-On losses include diode losses.
2
HGTP12N60C3, HGT1S12N60C3S
Typical Performance Curves
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
DUTY CYCLE <0.5%, V
CE
= 10V
PULSE DURATION = 250µs
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
80
70
60
50
40
30
20
10
0
4
6
8
10
12
14
V
GE
, GATE TO EMITTER VOLTAGE (V)
T
C
= 25
o
C
T
C
= -40
o
C
T
C
= 150
o
C
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, T
C
= 25
o
C
80
70
60
50
40
30
20
10
0
0
7.0V
2
4
6
8
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
7.5V
10
9.0V
10.0V
V
GE
= 15.0V
12.0V
8.5V
8.0V
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
80
70
60
50
40
30
20
10
0
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
C
= 25
o
C
T
C
= -40
o
C
T
C
= 150
o
C
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V
GE
= 10V
80
70
60
T
C
= -40
o
C
50
40
30
20
10
0
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
C
= 150
o
C
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V
GE
= 15V
T
C
= 25
o
C
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µs)
I
CE
, DC COLLECTOR CURRENT (A)
V
GE
= 15V
V
CE
= 360V, R
G
= 25Ω, T
J
= 125
o
C
120
15
I
SC
80
10
60
40
t
SC
5
10
11
12
13
14
V
GE
, GATE TO EMITTER VOLTAGE (V)
20
15
100
20
15
10
5
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 5. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
3
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
25
20
140
HGTP12N60C3, HGT1S12N60C3S
Typical Performance Curves
100
t
d(ON)I
, TURN-ON DELAY TIME (ns)
(Continued)
400
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
T
J
= 150
o
C, R
G
= 25Ω, L = 100µH, V
CE(PK)
= 480V
T
J
= 150
o
C, R
G
= 25Ω, L = 100mH, V
CE(PK)
= 480V
V
GE
= 15V
V
GE
= 10V
300
50
30
V
GE
= 10V
200
20
V
GE
= 15V
10
5
10
15
20
25
30
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
5
10
15
20
25
30
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
200
T
J
= 150
o
C, R
G
= 25Ω, L = 100µH, V
CE(PK)
= 480V
t
rI
, TURN-ON RISE TIME (ns)
100
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
300
T
J
= 150
o
C, R
G
= 25Ω, L = 100mH, V
CE(PK)
= 480V
t
fI
, FALL TIME (ns)
V
GE
= 10V
200
V
GE
= 10V or 15V
V
GE
= 15V
10
100
90
80
5
10
15
20
25
30
5
10
15
20
25
30
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
5
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
2.0
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
3.0
E
OFF
, TURN-OFF ENERGY LOSS (mJ)
E
ON
, TURN-ON ENERGY LOSS (mJ)
T
J
= 150
o
C, R
G
= 25Ω, L = 100µH, V
CE(PK)
= 480V
T
J
= 150
o
C, R
G
= 25Ω, L = 100µH, V
CE(PK)
= 480V
2.5
2.0
1.5
V
GE
= 10V or 15V
1.0
0.5
0
1.5
V
GE
= 10V
1.0
V
GE
= 15V
0.5
0
5
10
15
20
25
30
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
5
10
15
20
25
30
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
4
HGTP12N60C3, HGT1S12N60C3S
Typical Performance Curves
200
f
MAX
, OPERATING FREQUENCY (kHz)
100
V
GE
= 10V
V
GE
= 15V
f
MAX1
= 0.05/(t
D(OFF)I
+ t
D(ON)I
)
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
θJC
= 1.2
o
C/W
1
5
10
20
30
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
T
J
= 150
o
C, V
GE
= 15V, R
G
= 25Ω, L = 100µH
80
T
J
= 150
o
C, T
C
= 75
o
C
R
G
= 25Ω, L = 100µH
60
LIMITED BY
CIRCUIT
10
40
20
0
0
100
200
300
400
500
600
V
CE(PK)
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
2500
FREQUENCY = 1MHz
2000
C, CAPACITANCE (pF)
C
IES
FIGURE 14. SWITCHING SAFE OPERATING AREA
600
I
G(REF)
= 1.276mA, R
L
= 50Ω, T
C
= 25
o
C
15
V
GE
, GATE TO EMITTER VOLTAGE (V)
480
V
CE
= 600V
12
1500
360
9
1000
240
V
CE
= 400V
120
V
CE
= 200V
6
500
C
RES
0
0
5
10
15
20
25
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
OES
3
0
0
10
20
30
40
50
60
Q
G
, GATE CHARGE (nC)
0
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
Z
θ
JC
, NORMALIZED THERMAL RESPONSE
10
0
0.5
0.2
0.1
10
-1
0.05
0.02
0.01
SINGLE PULSE
10
-2
10
-5
10
-4
10
-3
10
-2
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
10
-1
10
0
P
D
t
2
10
1
t
1
t
1
, RECTANGULAR PULSE DURATION (s)
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
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