BFG310W/XR
NPN 14 GHz wideband transistor
Rev. 01 — 2 February 2005
Product data sheet
1. Product profile
1.1 General description
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.
1.2 Features
s
s
s
s
High power gain
Low noise figure
High transition frequency
Gold metallization ensures excellent reliability
1.3 Applications
s
Intended for Radio Frequency (RF) front end applications in the GHz range, such as:
x
analog and digital cellular telephones
x
cordless telephones (Cordless Telephone (CT), Personal Communication
Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)
x
radar detectors
x
pagers
x
Satellite Antenna TeleVision (SATV) tuners
1.4 Quick reference data
Table 1:
V
CBO
V
CEO
I
C
P
tot
h
FE
C
CBS
f
T
Quick reference data
Conditions
open emitter
open base
T
sp
≤
145
°C
I
C
= 5 mA; V
CE
= 3 V;
T
j
= 25
°C
V
CB
= 5 V; f = 1 MHz;
emitter grounded
I
C
= 5 mA; V
CE
= 3 V;
f = 1 GHz; T
amb
= 25
°C
[1]
Symbol Parameter
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
collector-base
capacitance
transition frequency
Min
-
-
-
-
60
-
-
Typ
-
-
-
-
100
0.17
14
Max
15
6
10
60
200
0.3
-
Unit
V
V
mA
mW
pF
GHz
Philips Semiconductors
BFG310W/XR
NPN 14 GHz wideband transistor
Quick reference data
…continued
Conditions
I
C
= 5 mA; V
CE
= 3 V;
f = 1.8 GHz; T
amb
= 25
°C
I
C
= 5 mA; V
CE
= 3 V;
f = 1.8 GHz; T
amb
= 25
°C;
Z
S
= Z
L
= 50
Ω
Γ
s
=
Γ
opt
; I
C
= 1 mA;
V
CE
= 3 V; f = 2 GHz
Min
-
-
Typ
18
14
Max
-
-
Unit
dB
dB
maximum stable gain
insertion power gain
Table 1:
MSG
|s
21
|
2
Symbol Parameter
NF
noise figure
-
1
-
dB
[1]
T
sp
is the temperature at the soldering point of the collector pin.
2. Pinning information
Table 2:
Pin
1
2
3
4
Pinning
Description
collector
emitter
base
emitter
2, 4
2
1
sym086
Simplified outline
3
4
Symbol
1
3
3. Ordering information
Table 3:
Ordering information
Package
Name
BFG310W/XR
-
Description
plastic surface mounted package; reverse pinning;
4 leads
Version
SOT343R
Type number
4. Marking
Table 4:
Marking codes
Marking code
[1]
A7*
Type number
BFG310W/XR
[1]
* = p: made in Hong Kong.
9397 750 14245
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 2 February 2005
2 of 12
Philips Semiconductors
BFG310W/XR
NPN 14 GHz wideband transistor
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
Conditions
open emitter
open base
open collector
T
sp
≤
145
°C
[1]
Min
-
-
-
-
-
−65
-
Max
15
6
2
10
60
+175
175
Unit
V
V
V
mA
mW
°C
°C
T
sp
is the temperature at the soldering point of the collector pin.
6. Thermal characteristics
Table 6:
R
th(j-sp)
[1]
Thermal characteristics
Conditions
T
sp
≤
145
°C
[1]
Symbol Parameter
thermal resistance from junction to solder point
Typ
530
Unit
K/W
T
sp
is the temperature at the soldering point of the collector pin.
7. Characteristics
Table 7:
Characteristics
T
j
= 25
°
C; unless otherwise specified.
Symbol Parameter
I
CBO
h
FE
C
CBS
C
CES
C
EBS
f
T
MSG
|s
21
|
2
collector-base cut-off current
DC current gain
collector-base capacitance
collector-emitter capacitance
emitter-base capacitance
transition frequency
maximum stable gain
insertion power gain
Conditions
I
E
= 0 A; V
CB
= 6 V
I
C
= 5 mA; V
CE
= 3 V
V
CB
= 5 V; f = 1 MHz; emitter grounded
V
CE
= 5 V; f = 1 MHz; base grounded
V
EB
= 0.5 V; f = 1 MHz; collector grounded
I
C
= 5 mA; V
CE
= 3 V; f = 1 GHz;
T
amb
= 25
°C
I
C
= 5 mA; V
CE
= 3 V; f = 1.8 GHz;
T
amb
= 25
°C
I
C
= 5 mA; V
CE
= 3 V; T
amb
= 25
°C;
Z
S
= Z
L
= 50
Ω
f = 1.8 GHz
f = 3 GHz
NF
P
L(1dB)
IP3
noise figure
output power at 1 dB gain
compression
third order intercept point
Γ
s
=
Γ
opt
; I
C
= 1 mA; V
CE
= 3 V; f = 2 GHz
I
C
= 5 mA; V
CE
= 3 V; f = 1.8 GHz;
T
amb
= 25
°C;
Z
S
= Z
L
= 50
Ω
I
C
= 5 mA; V
CE
= 3 V; f = 1.8 GHz;
T
amb
= 25
°C;
Z
S
= Z
L
= 50
Ω
-
-
-
-
-
14
11
1
1.8
8.5
-
-
-
-
-
dB
dB
dB
dBm
dBm
Min
-
60
-
-
-
-
-
Typ
-
100
0.17
0.22
0.16
14
18
Max
15
200
0.3
-
-
-
-
pF
pF
pF
GHz
dB
Unit
nA
9397 750 14245
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 2 February 2005
3 of 12
Philips Semiconductors
BFG310W/XR
NPN 14 GHz wideband transistor
P
tot
(mW)
60
50
70
001aac177
10
I
C
(mA)
8
I
B
= 120
µA
100
µA
80
µA
001aac178
40
30
20
6
60
µA
4
40
µA
20
µA
2
10
0
0
50
100
150
T
sp
(°C)
200
0
0
1
2
3
4
5
V
CE
(V)
6
Fig 1. Power derating curve
Fig 2. Collector current as a function of
collector-emitter voltage; typical values
001aac179
0.20
C
CBS
(pF)
0.19
40
G
(dB)
30
MSG
001aac180
0.18
20
0.17
10
0.16
s
21 2
0.15
0
1
2
3
4
V
CB
(V)
5
0
10
10
2
10
3
f (MHz)
10
4
I
C
= 0 mA; f = 1 MHz.
I
C
= 5 mA; V
CE
= 3 V.
Fig 3. Collector-base capacitance as a function of
collector-base voltage; typical values
Fig 4. Gain as a function of frequency; typical values
9397 750 14245
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 2 February 2005
4 of 12
Philips Semiconductors
BFG310W/XR
NPN 14 GHz wideband transistor
90°
+1
135°
+0.5
+2
45°
1.0
0.8
0.6
+0.2
0.4
0.2
180°
0
0.2
3 GHz
0.5
1
2
5
40 MHz
10
0°
0
+5
−0.2
−5
−135°
−0.5
−1
−90°
−2
−45°
1.0
001aac181
V
CE
= 3 V; I
C
= 5 mA; Z
o
= 50
Ω.
Fig 5. Common emitter input reflection coefficient (s
11
); typical values
90°
135°
45°
180°
20
16
12
8
40 MHz
4
0
3 GHz
0°
−135°
−45°
−90°
001aac182
V
CE
= 3 V; I
C
= 5 mA.
Fig 6. Common emitter forward transmission coefficient (s
21
); typical values
9397 750 14245
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 2 February 2005
5 of 12
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