IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BTA201-800ER
3Q Hi-Com Triac
22 September 2016
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT54 (TO-92) plastic package. This
"series ER" triac balances the requirements of commutation performance and gate sensitivity and
is intended for interfacing with low power drivers and logic ICs including microcontrollers. It has
reverse pinning to that of the standard triac in this package.
2. Features and benefits
•
•
•
•
•
•
•
•
•
3Q technology for improved noise immunity
Direct triggering from low power drivers and logic ICs
High commutation capability with sensitive gate
High immunity to false turn-on by dV/dt
High voltage capability
Planar passivated for voltage ruggedness and reliability
Reverse pinning version (ER)
Sensitive gate for easy logic level triggering
Triggering in three quadrants only
3. Applications
•
•
•
General purpose motor control
Small loads in washing machines
Solenoid drivers
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
Parameter
repetitive peak off-
state voltage
RMS on-state current
full sine wave; T
lead
≤ 54 °C;
Fig. 1;
Fig. 2; Fig. 3
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Conditions
Min
-
-
Typ
-
-
Max
800
1
Unit
V
A
Static characteristics
I
GT
gate trigger current
1
1
1
-
-
-
10
10
10
mA
mA
mA
WeEn Semiconductors
BTA201-800ER
3Q Hi-Com Triac
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
Symbol Description
T1
G
T2
main terminal 1
gate
main terminal 2
321
Simplified outline
Graphic symbol
T2
sym051
T1
G
TO-92 (SOT54)
6. Ordering information
Table 3. Ordering information
Type number
BTA201-800ER
Package
Name
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
BTA201-800ER
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
22 September 2016
2 / 13
WeEn Semiconductors
BTA201-800ER
3Q Hi-Com Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I t for fusing
rate of rise of on-state
current
peak gate current
peak gate power
average gate power
junction temperature
1.2
I
T(RMS)
(A)
1
54.3 °C
003aaa957
Conditions
Min
-
Max
800
1
13.7
12.5
0.78
100
2
5
0.1
125
003aaa958
Unit
V
A
A
A
A²s
A/µs
A
W
W
°C
full sine wave; T
lead
≤ 54 °C;
Fig. 1; Fig. 2;
Fig. 3
full sine wave; T
j(init)
= 25 °C; t
p
= 16.8 ms
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
t
p
= 10 ms; SIN
I
G
= 0.2 A
-
-
-
-
-
-
-
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
j
2
2
over any 20 ms period
-
-40
3
I
T(RMS)
(A)
0.8
0.6
0.4
0.2
0
-50
2
1
0
50
150
100
T
lead
(°C)
0
10
-2
10
-1
1
10
surge duration (s)
Fig. 1. RMS on-state current as a function of lead
temperature; maximum values
f = 50 Hz; T
lead
= 54 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
BTA201-800ER
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
22 September 2016
3 / 13
WeEn Semiconductors
BTA201-800ER
3Q Hi-Com Triac
1.5
P
tot
(W)
003aaa954
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
α = 180°
120°
90°
60°
30°
1
0.5
0
0
0.2
0.4
0.6
0.8
1
I
T(RMS)
(A)
1.2
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
10
3
I
TSM
(A)
003aaa955
I
T
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
2
(1)
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms
(1) dI
T
/dt limit
Fig. 4. Non-repetitive peak on-state current as a function of pulse width; maximum values
BTA201-800ER
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
22 September 2016
4 / 13
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