DATASHEET
HCS157MS
Radiation Hardened Quad 2-Input Multiplexers
FN3561
Rev 1.00
September 1995
Features
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
• Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/
Bit-Day (Typ)
• Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
• Dose Rate Upset >10
10
RAD (Si)/s, 20ns Pulse
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55
o
C
Pinouts
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T16, LEAD FINISH C
TOP VIEW
S 1
1I0 2
1I1 3
1Y 4
2I0 5
16 VCC
15 E
14 4I0
13 4I1
12 4Y
11 3I0
10 3I1
9 3Y
to
+125
o
C
2I1 6
2Y 7
GND 8
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
• Input Current Levels Ii
5A at VOL, VOH
Description
The Intersil HCS157MS is a Radiation Hardened quad
2-input multiplexers which select four bits of data from two
sources under the control of a common select input (S). The
Enable input (E NOT) is active low. When the enable pin is
high all of the outputs (1Y-4Y) are forced low regardless of
all other input conditions.
Moving data from two groups of registers to four common
output busses is a common use of these devices. The state
of the Select input determines the particular register from
which the data comes. They can also be used as function
generators.
The HCS157MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS157MS is supplied in a 16 lead Ceramic flat-
pack (K suffix) or a SBDIP Package (D suffix).
S
1I0
1I1
1Y
2I0
2I1
2Y
GND
16 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F16, LEAD FINISH C
TOP VIEW
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VCC
E
4I0
4I1
4Y
3I0
3I1
3Y
Ordering Information
PART NUMBER
HCS157DMSR
HCS157KMSR
HCS157D/Sample
HCS157K/Sample
HCS157HMSR
TEMPERATURE RANGE
-55
o
C to +125
o
C
-55
o
C to +125
o
C
+25
o
C
+25
o
C
+25
o
C
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
PACKAGE
16 Lead SBDIP
16 Lead Ceramic Flatpack
16 Lead SBDIP
16 Lead Ceramic Flatpack
DB NA
Die
FN3561 Rev 1.00
September 1995
Page 1 of 9
HCS157MS
Functional Block Diagram
S
1
E
15
4I1
13
12
14
10
11
6
5
3
2
3 CIRCUITS IDENTICAL TO CIRCUIT
IN ABOVE DASHED OUTLINE
9
7
4
3Y
2Y
1Y
4Y
4I0
3I1
3I0
2I1
2I0
1I1
1I0
TRUTH TABLE
SELECT
INPUTS
S
X
L
L
H
H
I0
X
L
H
X
X
ENABLE
E
H
L
L
L
L
H = High Level
L = Low Level
X = Immaterial
DATA INPUTS
I1
X
X
X
L
H
OUTPUT
Y
L
L
H
L
H
FN3561 Rev 1.00
September 1995
Page 2 of 9
HCS157MS
Absolute Maximum Ratings
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
10mA
DC Drain Current, Any One Output
25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance
JA
JC
o
SBDIP Package. . . . . . . . . . . . . . . . . . . .
73 C/W
24
o
C/W
o
C/W
Ceramic Flatpack Package . . . . . . . . . . . 114
29
o
C/W
o
C Ambient
Maximum Package Power Dissipation at +125
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/
o
C
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . . 100ns Max
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . VCC to 70% of VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . .0V to 30% of VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
1
2, 3
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V,
(Note 2)
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC - 0.4V,
VIL = 0V, (Note 2)
VCC = 4.5V, VIH = 3.15V,
IOL = 50A, VIL = 1.35V
VCC = 5.5V, VIH = 3.85V,
IOL = 50A, VIL = 1.65V
Output Voltage High
VOH
VCC = 4.5V, VIH = 3.15V,
IOH = -50A, VIL = 1.35V
VCC = 5.5V, VIH = 3.85V,
IOH = -50A, VIL = 1.65V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
2, 3
1
2, 3
1, 2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
MIN
-
-
7.2
6.0
-7.2
-6.0
-
MAX
40
750
-
-
-
-
0.1
UNITS
A
A
mA
mA
mA
mA
V
PARAMETER
Supply Current
SYMBOL
ICC
(NOTE 1)
CONDITIONS
VCC = 5.5V,
VIN = VCC or GND
Output Current
(Source)
IOH
Output Voltage Low
VOL
1, 2, 3
-
0.1
V
1, 2, 3
VCC
-0.1
VCC
-0.1
-
-
-
-
V
1, 2, 3
-
V
1
2, 3
0.5
5.0
-
A
A
-
Noise Immunity
Functional Test
NOTES:
FN
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, (Note 3)
7, 8A, 8B
1. All voltages referenced to device GND.
2. Force/Measure functions may be interchanged.
3. For functional tests, VO
4.0V is recognized as a logic “1”, and VO 0.5V is recognized as a logic “0”.
FN3561 Rev 1.00
September 1995
Page 3 of 9
HCS157MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
9
10, 11
TPLH
VCC = 4.5V
9
10, 11
Propagation Delay
Enable to Output
TPHL
VCC = 4.5V
9
10, 11
TPLH
VCC = 4.5V
9
10, 11
Propagation Delay
Select to Output
TPHL
VCC = 4.5V
9
10, 11
TPLH
VCC = 4.5V
9
10, 11
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
2
2
2
2
2
2
2
2
2
2
2
2
MAX
26
30
20
24
22
25
22
25
31
37
25
29
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
PARAMETER
Propagation Delay
Data to Output
SYMBOL
TPHL
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Capacitance Power
Dissipation
SYMBOL
CPD
CONDITIONS
VCC = 5.0V, VIH = 5.0V,
VIL = 0V, f = 1MHz
NOTES
1
1
Input Capacitance
CIN
VCC = 5.0V, VIH = 5.0V,
VIL = 0V, f = 1MHz
1
1
Output Transition
Time
TTHL,
TTLH
VCC = 4.5V VIH = 4.5V,
VIL = 0V,
1
1
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
-
-
-
-
-
-
MAX
68
84
10
10
15
22
UNITS
pF
pF
pF
pF
ns
ns
FN3561 Rev 1.00
September 1995
Page 4 of 9
HCS157MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
200K RAD
LIMITS
PARAMETER
Supply Current
Output Current (Sink)
SYMBOL
ICC
IOL
(NOTES 1, 2)
CONDITIONS
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
VCC = 4.5V , VIH = 3.15,
VIL = 1.35V, IOL = 50A
VCC = 5.5V, VIH = 3.85,
VIL =1.65V, IOL = 50A
Output Voltage High
VOH
VCC = 4.5V, VIH = 3.15,
VIL = 1.35V, IOH = -50A
VCC = 5.5V, VIH = 3.85,
VIL = 1.65V, IOH = -50A
Input Leakage Current
Noise Immunity
Functional Test
Propagation Delay
Data to Output
IIN
FN
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIH = 3.15V, VIL = 1.35V,
(Note 3)
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
-
6.0
MAX
0.75
-
UNITS
mA
mA
Output Current
(Source)
Output Voltage Low
IOH
-6.0
-
mA
VOL
-
0.1
V
-
0.1
V
VCC
-0.1
VCC
-0.1
-
-
-
V
-
V
5
-
A
-
TPHL
TPLH
2
2
2
2
2
2
30
24
25
25
37
29
ns
ns
ns
ns
ns
ns
Propagation Delay
Enable to Output
TPHL
TPLH
Propagation Delay
Select to Output
TPHL
TPLH
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
3. For functional tests VO
4.0V is recognized as a logic “1”, and VO
0.5V is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
PARAMETER
ICC
IOL/IOH
GROUP B
SUBGROUP
5
5
DELTA LIMIT
12A
-15% of 0 Hour
FN3561 Rev 1.00
September 1995
Page 5 of 9
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