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5962R9577901VXC

产品描述HC/UH SERIES, DUAL 4-INPUT AND GATE, CDFP14, METAL SEALED, CERAMIC, DFP-14
产品类别逻辑    逻辑   
文件大小18KB,共2页
制造商Renesas(瑞萨电子)
官网地址https://www.renesas.com/
下载文档 详细参数 全文预览

5962R9577901VXC概述

HC/UH SERIES, DUAL 4-INPUT AND GATE, CDFP14, METAL SEALED, CERAMIC, DFP-14

5962R9577901VXC规格参数

参数名称属性值
零件包装代码DFP
包装说明DFP, FL14,.3
针数14
Reach Compliance Codeunknown
系列HC/UH
JESD-30 代码R-CDFP-F14
JESD-609代码e4
长度9.525 mm
负载电容(CL)50 pF
逻辑集成电路类型AND GATE
最大I(ol)0.004 A
功能数量2
输入次数4
端子数量14
最高工作温度125 °C
最低工作温度-55 °C
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装代码DFP
封装等效代码FL14,.3
封装形状RECTANGULAR
封装形式FLATPACK
包装方法TAPE AND REEL
电源5 V
Prop。Delay @ Nom-Sup22 ns
传播延迟(tpd)20 ns
认证状态Not Qualified
施密特触发器NO
筛选级别38535V;38534K;883S
座面最大高度2.92 mm
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级MILITARY
端子面层GOLD
端子形式FLAT
端子节距1.27 mm
端子位置DUAL
总剂量100k Rad(Si) V
宽度6.285 mm
Base Number Matches1

文档预览

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HCS21MS Device Information
HCS21MS
AND-Gate, 4-Input, Dual, Rad-Hard, High-Speed, CMOS, Logic
Get Datasheet
Ordering Information
Part No.
Status
Temp.
-
-
-
Package
14 Ld SBDIP
Other
14 Ld FlatPack
MSL
N/A
SMD
-
Printer Friendly Version
Price
US $
Contact Us
Contact Us
Contact Us
HCS21DMSR InActive
HCS21HMSR InActive
HCS21KMSR InActive
N/A 5962R9577901VCC
N/A 5962R9577901VXC
The price listed is the manufacturer's suggested retail price for quantities between 100 and
999 units. However, prices in today's market are fluid and may change without notice.
MSL
= Moisture Sensitivity Level - per IPC/JEDEC J-STD-020
SMD
= Standard Microcircuit Drawing
Description
The Intersil HCS21MS is a Radiation Hardened Dual Input AND Gate. A high on all inputs
forces the output to a High state.
The HCS21MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This
device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS21MS is supplied in a 14 lead Ceramic flatpack (K suffix) or a SBDIP Package (D
suffix).
Key Features
q
q
q
q
q
q
q
q
3 Micron Radiation Hardened SOS CMOS
Total Dose 200K RAD (Si)
SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/Bit-Day (Typ)
Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
Latch-Up Free Under Any Conditions
Military Temperature Range: -55
o
C to +125
o
C
q
Significant Power Reduction Compared to LSTTL ICs
q
DC Operating Voltage Range: 4.5V to 5.5V
q
Input Logic Levels
r
VIL = 30% of VCC Max
r
VIH = 70% of VCC Min
q
Input Current Levels Ii d 5µA at VOL, VOH
Related Documentation
http://www.intersil.com/products/deviceinfo.asp?pn=HCS21MS (1 of 2) [06/12/2004 09:08:05 ?]

 
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