Datasheet> 器件分类 > 存储> 存储> IS62C10248AL-55MLI

文档预览

IS62C10248AL-55MLI: 产品描述Standard SRAM, 1MX8, 55ns, CMOS, PBGA48, 9 X 11 MM, LEAD FREE, MO-207, MINI, TFBGA-48; 产品类别存储存储; 文件大小487KB，共14页; 制造商Integrated Silicon Solution ( ISSI ); 标准

下载文档详细参数选型对比全文预览

IS62C10248AL-55MLI概述

Standard SRAM, 1MX8, 55ns, CMOS, PBGA48, 9 X 11 MM, LEAD FREE, MO-207, MINI, TFBGA-48

IS62C10248AL-55MLI规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	Integrated Silicon Solution ( ISSI )
零件包装代码	DSBGA
包装说明	TFBGA, BGA48,6X8,30
针数	48
Reach Compliance Code	compliant
ECCN代码	3A991.B.2.A
最长访问时间	55 ns
I/O 类型	COMMON
JESD-30 代码	R-PBGA-B48
JESD-609代码	e1
长度	11 mm
内存密度	8388608 bit
内存集成电路类型	STANDARD SRAM
内存宽度	8
湿度敏感等级	3
功能数量	1
端子数量	48
字数	1048576 words
字数代码	1000000
工作模式	ASYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	1MX8
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	TFBGA
封装等效代码	BGA48,6X8,30
封装形状	RECTANGULAR
封装形式	GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行	PARALLEL
峰值回流温度（摄氏度）	260
电源	5 V
认证状态	Not Qualified
座面最大高度	1.2 mm
最大待机电流	0.00006 A
最小待机电流	2 V
最大压摆率	0.025 mA
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	4.5 V
标称供电电压 (Vsup)	5 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	TIN SILVER COPPER
端子形式	BALL
端子节距	0.75 mm
端子位置	BOTTOM
处于峰值回流温度下的最长时间	40
宽度	9 mm
Base Number Matches	1

文档预览

下载PDF文档

全文
预览

IS62C10248AL

IS65C10248AL

1M x 8 LOW VOLTAGE,

ULTRA LOW POWER CMOS STATIC RAM

FEATURES

• High-speed access time: 45ns, 55ns

• CMOS low power operation

– 36 mW (typical) operating

– 12 µW (typical) CMOS standby

• TTL compatible interface levels

• Single power supply

– 4.5V--5.5V V

• Three state outputs

• Automotive temperature (-40

C to +125

• Lead-free available

PRELIMINARY INFORMATION

DECEMBER 2010

speed, 8M bit static RAMs organized as 1M words by

8 bits. It is fabricated using

ISSI

's high-performance

CMOS technology. This highly reliable process coupled

with innovative circuit design techniques, yields high-

performance and low power consumption devices.

When

CS1

is HIGH (deselected) or when CS2 is LOW

(deselected), the device assumes a standby mode at

which the power dissipation can be reduced down with

CMOS input levels.

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs. The active LOW Write Enable

(WE) controls both writing and reading of the memory.

The IS62C10248AL and IS65C10248AL are packaged in

the JEDEC standard 48-pin mini BGA (9mm x 11mm) and

44-Pin TSOP (TYPE II).

DESCRIPTION

The

ISSI

IS62C10248AL/IS65C10248AL are high-

FUNCTIONAL BLOCK DIAGRAM

A0-A19

DECODER

1M x 8

MEMORY ARRAY

GND

I/O

DATA

CIRCUIT

I/O0-I/O7

COLUMN I/O

CS2

CS1

liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on

any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause

failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written

assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

CONTROL

CIRCUIT

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

Rev. 00B

11/23/2010

IS62C10248AL-55MLI相似产品对比

	IS62C10248AL-55MLI	IS65C10248AL-55CTLA3	IS65C10248AL-55MLA3
描述	Standard SRAM, 1MX8, 55ns, CMOS, PBGA48, 9 X 11 MM, LEAD FREE, MO-207, MINI, TFBGA-48	Standard SRAM, 1MX8, 55ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44	Standard SRAM, 1MX8, 55ns, CMOS, PBGA48, 9 X 11 MM, LEAD FREE, MO-207, MINI, TFBGA-48
是否无铅	不含铅	不含铅	不含铅
是否Rohs认证	符合	符合	符合
厂商名称	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
零件包装代码	DSBGA	TSOP2	DSBGA
包装说明	TFBGA, BGA48,6X8,30	TSOP2, TSOP44,.46,32	TFBGA, BGA48,6X8,30
针数	48	44	48
Reach Compliance Code	compliant	compliant	compliant
ECCN代码	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
最长访问时间	55 ns	55 ns	55 ns
I/O 类型	COMMON	COMMON	COMMON
JESD-30 代码	R-PBGA-B48	R-PDSO-G44	R-PBGA-B48
JESD-609代码	e1	e3	e1
长度	11 mm	18.41 mm	11 mm
内存密度	8388608 bit	8388608 bit	8388608 bit
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
内存宽度	8	8	8
湿度敏感等级	3	3	3
功能数量	1	1	1
端子数量	48	44	48
字数	1048576 words	1048576 words	1048576 words
字数代码	1000000	1000000	1000000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	125 °C	125 °C
最低工作温度	-40 °C	-40 °C	-40 °C
组织	1MX8	1MX8	1MX8
输出特性	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TFBGA	TSOP2	TFBGA
封装等效代码	BGA48,6X8,30	TSOP44,.46,32	BGA48,6X8,30
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	GRID ARRAY, THIN PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	260	260	260
电源	5 V	5 V	5 V
认证状态	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.2 mm	1.2 mm	1.2 mm
最大待机电流	0.00006 A	0.00018 A	0.00018 A
最小待机电流	2 V	2 V	2 V
最大压摆率	0.025 mA	0.04 mA	0.04 mA
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V
表面贴装	YES	YES	YES
技术	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	AUTOMOTIVE	AUTOMOTIVE
端子面层	TIN SILVER COPPER	MATTE TIN	TIN SILVER COPPER
端子形式	BALL	GULL WING	BALL
端子节距	0.75 mm	0.8 mm	0.75 mm
端子位置	BOTTOM	DUAL	BOTTOM
处于峰值回流温度下的最长时间	40	40	40
宽度	9 mm	10.16 mm	9 mm
Base Number Matches	1	1	1
筛选级别	-	AEC-Q100	AEC-Q100

IS62C10248AL-55MLI

IS62C10248AL-55MLI概述

IS62C10248AL-55MLI规格参数

文档预览

IS62C10248AL-55MLI相似产品对比

推荐资源