RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
参数名称 | 属性值 |
是否无铅 | 含铅 |
厂商名称 | International Rectifier ( Infineon ) |
零件包装代码 | TO-257AA |
包装说明 | FLANGE MOUNT, R-CSFM-P3 |
针数 | 3 |
Reach Compliance Code | unknow |
ECCN代码 | EAR99 |
Is Samacsys | N |
其他特性 | RADIATION HARDENED; AVALANCHE RATED |
雪崩能效等级(Eas) | 150 mJ |
外壳连接 | ISOLATED |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 200 V |
最大漏极电流 (ID) | 9.4 A |
最大漏源导通电阻 | 0.49 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-257AA |
JESD-30 代码 | R-CSFM-P3 |
元件数量 | 1 |
端子数量 | 3 |
工作模式 | ENHANCEMENT MODE |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
封装形状 | RECTANGULAR |
封装形式 | FLANGE MOUNT |
峰值回流温度(摄氏度) | NOT SPECIFIED |
极性/信道类型 | N-CHANNEL |
最大脉冲漏极电流 (IDM) | 37.6 A |
认证状态 | Not Qualified |
表面贴装 | NO |
端子形式 | PIN/PEG |
端子位置 | SINGLE |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
Base Number Matches | 1 |
IRHY7230CM | IRHY3230CM | IRHY4230CM | IRHY8230CM | |
---|---|---|---|---|
描述 | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) |
是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 |
零件包装代码 | TO-257AA | TO-257AA | TO-257AA | TO-257AA |
包装说明 | FLANGE MOUNT, R-CSFM-P3 | FLANGE MOUNT, R-CSFM-P3 | FLANGE MOUNT, R-CSFM-P3 | FLANGE MOUNT, R-CSFM-P3 |
针数 | 3 | 3 | 3 | 3 |
Reach Compliance Code | unknow | unknow | compliant | compliant |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
雪崩能效等级(Eas) | 150 mJ | 150 mJ | 150 mJ | 150 mJ |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 200 V | 200 V | 200 V | 200 V |
最大漏极电流 (ID) | 9.4 A | 9.4 A | 9.4 A | 9.4 A |
最大漏源导通电阻 | 0.49 Ω | 0.49 Ω | 0.49 Ω | 0.49 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-257AA | TO-257AA | TO-257AA | TO-257AA |
JESD-30 代码 | R-CSFM-P3 | R-CSFM-P3 | R-CSFM-P3 | R-CSFM-P3 |
元件数量 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最大脉冲漏极电流 (IDM) | 37.6 A | 37.6 A | 37.6 A | 37.6 A |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO | NO |
端子形式 | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG |
端子位置 | SINGLE | SINGLE | SINGLE | SINGLE |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
Base Number Matches | 1 | 1 | 1 | 1 |
厂商名称 | International Rectifier ( Infineon ) | - | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) |
最高工作温度 | - | 150 °C | 150 °C | 150 °C |
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