PD - 91364B
IRFR/U3910
HEXFET
®
Power MOSFET
Ultra Low On-Resistance
l
Surface Mount (IRFR3910)
l
Straight Lead (IRFU3910)
l
Advanced Process Technology
l
Fast Switching
l
Fully Avalanche Rated
Description
l
D
V
DSS
= 100V
G
S
R
DS(on)
= 0.115Ω
I
D
= 16A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
D -P A K
T O -252 A A
I-P A K
T O -25 1A A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
16
12
60
79
0.53
± 20
150
9.0
7.9
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.9
50
110
Units
°C/W
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1
5/11/98
IRFR/U3910
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
100
–––
–––
2.0
6.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.4
27
37
25
4.5
7.5
640
160
88
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.115
V
GS
= 10V, I
D
= 10A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 50V, I
D
= 9.0A
25
V
DS
= 100V, V
GS
= 0V
µA
250
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
44
I
D
= 9.0A
6.2
nC
V
DS
= 80V
21
V
GS
= 10V, See Fig. 6 and 13
–––
V
DD
= 50V
–––
I
D
= 9.0A
ns
–––
R
G
= 12Ω
–––
R
D
= 5.5Ω, See Fig. 10
Between lead,
–––
nH
6mm (0.25in.)
G
from package
–––
and center of die contact
–––
V
GS
= 0V
–––
pF
V
DS
= 25V
–––
ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
16
––– –––
showing the
A
G
integral reverse
––– –––
60
p-n junction diode.
S
––– ––– 1.3
V
T
J
= 25°C, I
S
= 9.0A, V
GS
= 0V
––– 130 190
ns
T
J
= 25°C, I
F
= 9.0A
––– 650 970
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 25V, starting T
J
= 25°C, L = 3.1mH
R
G
= 25Ω, I
AS
= 9.0A. (See Figure 12)
T
J
≤
175°C
Pulse width
≤
300µs; duty cycle
≤
2%
This is applied for I-PAK, Ls of D-PAK is measured between lead and
center of die contact
I
SD
≤
9.0A, di/dt
≤
520A/µs, V
DD
≤
V
(BR)DSS
,
Uses IRF530N data and test conditions
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
2
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IRFR/U3910
100
I , D rain-to-S ourc e C urrent (A )
D
10
I , D rain-to-S ourc e C urrent (A )
D
VG S
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOT TOM 4.5V
TOP
10
4 .5V
4.5V
1
0.1
1
20µs P U LS E W ID TH
T
J
= 25°C
10
A
100
1
0.1
1
20 µs P U LS E W ID TH
T
J
= 1 75°C
10
100
A
VD S , Drain-to-S ource Voltage (V)
V D S , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
3.0
R
D S (on)
, Drain-to-S ource O n Resistance
(N orm alized)
I
D
= 1 5A
I
D
, D ra in -to-S ourc e C urrent (A)
2.5
T
J
= 2 5 °C
T
J
= 1 75 °C
2.0
10
1.5
1.0
0.5
and
1
4
5
6
7
V
DS
= 5 0V
2 0µ s P U L S E W ID TH
8
9
10
A
0.0
-60
-40
-20
0
20
40
60
80
V
G S
= 10 V
100 120 140 160 180
A
V
G S
, G ate-to -So urce Voltag e (V)
T
J
, Junction T em perature (°C )
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFR/U3910
1200
1000
C , C apac itanc e (pF )
C
iss
800
600
C
oss
400
V
G S
, G ate-to-S o urc e V oltage (V )
V
GS
C
is s
C
rss
C
os s
=
=
=
=
0V ,
f = 1M H z
C
g s
+ C
gd
, C
ds
S H O R T E D
C
gd
C
ds
+ C
gd
20
I
D
= 9 .0A
V
D S
= 80 V
V
D S
= 50 V
V
D S
= 20 V
16
12
8
C
rs s
200
4
0
1
10
100
A
0
0
5
10
15
20
FO R TE S T C IR C U IT
S E E F IG U R E 1 3
25
30
35
40
45
A
V
D S
, Drain-to-S ourc e Voltage (V)
Q
G
, T otal G ate C harge (nC )
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
I
SD
, Reverse D rain C urrent (A)
O P E R A TIO N IN TH IS A R E A L IM ITE D
B Y R
D S (o n)
I
D
, Drain C urrent (A )
100
T
J
= 1 75 °C
10
10µ s
T
J
= 2 5°C
10
100µ s
1
0.4
0.6
0.8
1.0
1.2
V
G S
= 0 V
1.4
A
1.6
1
1
T
C
= 25 °C
T
J
= 17 5°C
S ing le P u lse
10
1m s
10m s
100
1000
A
V
S D
, S ourc e-to-D rain V oltage (V )
V
D S
, D rain-to-S ource V oltage (V )
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFR/U3910
20
V
DS
V
GS
R
D
D.U.T.
+
I
D
, Drain Current (A)
15
R
G
-
V
DD
5.0V
10
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
5
V
DS
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( ° C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.05
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
0.1
0.02
0.01
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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