CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
I
D(ON)
I
GSS
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
Measured From the Drain
Lead, 6.0mm (0.25in) from
Package to Center
of Die
Measured From the
Source Lead, 6.0mm
(0.25in) from Package to
Source Bonding Pad
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
D
L
D
G
L
S
S
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V, (Figure 10)
V
GS
= V
DS
, I
D
= 250µA
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V,
(Figure 7)
V
GS
=
±20V
I
D
= 1.7A, V
GS
= 10V, (Figures 8, 9)
V
DS
≥
10V, I
D
= 2.0A, (Figure 12)
V
DD
=
200V, I
D
≈
3.1A, R
GS
= 18Ω, R
L
= 63Ω,
V
GS
= 10V
MOSFET Switching Times are Essentially Indepen-
dent of Operating Temperature
V
GS
= 10V, I
D
= 3.1A, V
DS
= 0.8 x Rated BV
DSS,
I
G(REF)
= 1.5mA, (Figure 14)
Gate Charge is Essentially Independent of Operat-
ing Temperature
V
DS
= 25V, V
GS
= 0V, f = 1MHz, (Figure 11)
MIN
400
2.0
-
-
3.1
-
-
1.7
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
1.600
2.6
10
14
30
13
13
2.2
7.2
350
64
8.1
4.5
MAX
-
4.0
25
250
-
±100
1.800
-
15
21
45
20
20
3.3
11
-
-
-
-
UNITS
V
V
µA
µA
A
nA
Ω
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
L
S
-
7.5
-
nH
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
θJC
R
θJA
Typical Solder Mount
-
-
-
-
2.5
110
o
C/W
o
C/W
4-396
IRFR320, IRFU320
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
I
SD
I
SDM
TEST CONDITIONS
Modified MOSFET
Symbol Showing the In-
tegral Reverse P-N
Junction Rectifier
G
D
MIN
-
-
TYP
-
-
MAX
3.1
12
UNITS
A
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= 3.1A, V
GS
= 0V,
(Figure 13)
T
J
= 25
o
C, I
SD
= 3.1A, dI
SD
/dt = 100A/µs
T
J
= 25
o
C, I
SD
= 3.1A, dI
SD
/dt = 100A/µs
-
120
0.64
-
270
1.4
1.6
600
3.0
V
ns
µC
2. Pulse test: pulse width
≤
300µs, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
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