PD - 9.1253
IRFR2605
IRFU2605
HEXFET
®
Power MOSFET
Ultra Low On-Resistance
ESD Protected
Surface Mount (IRFR2605)
Straight Lead (IRFU2605)
150°C Operating Temperature
Repetitive Avalanche Rated
Fast Switching
Description
D
V
DSS
= 55V
G
R
DS(on)
= 0.075
Ω
I
D
= 19A
S
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques that achieve extremely low on-resistance per silicon area
and allow electrostatic discharge protection to be integrated in the gate structure.
These benefits, combined with the ruggedized device design that HEXFETs are
known for, provide the designer with extremely efficient and reliable device for use
in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave
soldering techniques. The straight lead version (IRFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 watts are possible in
typical surface mount applications.
D-PAK
TO-252AA
I-PAK
TO-251AA
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation (PCB Mount)**
Linear Derating Factor
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Human Body Model, 100pF, 1.5K
Ω
Max.
19
12
76
50
3.1
0.40
0.025
±20
100
12
5.0
4.5
-55 to + 150
300 (1.6mm from case)
2000
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
V
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
V
ESD
Thermal Resistance
Parameter
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB Mount)**
Junction-to-Ambient
Min.
—
—
—
Typ.
—
—
—
Max.
2.5
40
62
Units
°C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRFR2605
IRFU2605
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆
V
(BR)DSS
/
∆
T
J
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
55
–––
–––
2.0
3.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.085
Ω
V
GS
= 10V, I
D
= 11A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 25V, I
D
= 11A
25
V
DS
= 55V, V
GS
= 0V
µA
250
V
DS
= 44V, V
GS
= 0V, T
J
= 125°C
10
V
GS
= 20V
µA
-10
V
GS
= -20V
23
I
D
= 11A
5.4
nC V
DS
= 44V
10
V
GS
= 10V, See Fig. 6 and 13
–––
V
DD
= 25V
–––
I
D
= 11A
ns
–––
R
G
= 20Ω
–––
R
D
= 2.2Ω, See Fig. 10
Between lead,
––– 4.5 –––
6mm (0.25in.)
nH
from package
––– 7.5 –––
and center of die contact
––– 420 –––
V
GS
= 0V
––– 250 –––
pF
V
DS
= 25V
––– 67 –––
ƒ = 1.0MHz, See Fig. 5
D
G
S
Typ.
–––
0.051
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.1
56
31
39
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
18
A
72
V
ns
µC
––– 1.5
67 100
0.18 0.26
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 11A, V
GS
= 0V
T
J
= 25°C, I
F
= 11A
di/dt = 100A/µs
G
D
S
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
11A, di/dt
≤
110A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300µs; duty cycle
≤
2%.
V
DD
= 25V, starting T
J
= 25°C, L = 830µH
R
G
= 25Ω, I
AS
= 11A. (See Figure 12)
IRFR2605
IRFU2605
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
I , Drain-to-Source Current (A)
D
10
I , Drain-to-Source Current (A)
D
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
10
4.5V
1
4.5V
1
0.1
0.01
20µs PULSE WIDTH
T
C
= 25°C
0.1
1
10
1 00
A
0.1
0.01
20µs PULSE WIDTH
T
C
= 150°C
0.1
1
10
100
A
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics,
T
C
= 25
o
C
Fig 2.
Typical Output Characteristics,
T
C
= 150
o
C
100
2.0
T
J
= 25°C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 19A
I
D
, Drain-to-Source Current (A)
1.5
T
J
= 150°C
10
1.0
0.5
1
4
5
6
7
V
DS
= 25V
20µs PULSE WIDTH
8
9
10
A
0.0
-60
-40
-20
0
20
40
60
80
V
GS
= 10V
100 120 140 160
A
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRFR2605
IRFU2605
1000
V
GS
, Gate-to-Source Voltage (V)
800
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 11A
V
DS
= 44V
V
DS
= 26V
16
C, Capacitance (pF)
600
12
C
iss
400
C
oss
8
200
4
C
rss
0
1
10
100
A
0
0
5
10
FOR TEST CIRCUIT
SEE FIGURE 13
15
20
25
A
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
I
D
, Drain Current (A)
100
10µs
T
J
= 150°C
T
J
= 25°C
1
10
100µs
0.1
0.0
0.4
0.8
1.2
V
GS
= 0V
A
1.6
1
0.1
T
C
= 25°C
T
J
= 150°C
Single Pulse
1
10
1ms
A
100
1000
V
SD
, Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
IRFR2605
IRFU2605
V
DS
20
R
D
V
GS
R
G
D.U.T.
V
DD
16
I
D
, Drain Current (Amps)
10 V
12
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
8
4
0
25
50
75
100
125
A
150
T
C
, Case Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
N o te s :
1 . D u ty fa c to r D = t
P
D M
t
1
t
2
1
/ t2
0.01
0.00001
2 . P e a k T
J
= P
D M
x Z
th J C
+ T C
A
1
0.0001
0.001
0.01
0.1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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