Power MOSFET(Vdss=55V, Rds(on)=0.027ohm, Id=44A)
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 零件包装代码 | TO-252AA |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 |
| 针数 | 3 |
| Reach Compliance Code | unknow |
| ECCN代码 | EAR99 |
| Is Samacsys | N |
| 其他特性 | AVALANCHE RATED, ULTRA LOW RESISTANCE |
| 雪崩能效等级（Eas） | 210 mJ |
| 外壳连接 | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 55 V |
| 最大漏极电流 (ID) | 20 A |
| 最大漏源导通电阻 | 0.027 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-252AA |
| JESD-30 代码 | R-PSSO-G2 |
| JESD-609代码 | e0 |
| 湿度敏感等级 | 1 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 160 A |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | TIN LEAD |
| 端子形式 | GULL WING |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| IRFR1205 | IRFU1205 | IRFR1205TRRPBF | IRFR1205HR | |
|---|---|---|---|---|
| 描述 | Power MOSFET(Vdss=55V, Rds(on)=0.027ohm, Id=44A) | Power MOSFET(Vdss=55V, Rds(on)=0.027ohm, Id=44A) | mosfet N-CH 55v 44a dpak | Power Field-Effect Transistor, 44A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3/2 |
| 是否Rohs认证 | 不符合 | 不符合 | 符合 | 不符合 |
| 零件包装代码 | TO-252AA | TO-251AA | TO-252AA | TO-252AA |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 | IN-LINE, R-PSIP-T3 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
| 针数 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknow | compliant | _compli | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | AVALANCHE RATED, ULTRA LOW RESISTANCE | AVALANCHE RATED, ULTRA LOW RESISTANCE | AVALANCHE RATED, ULTRA LOW RESISTANCE | AVALANCHE RATED, ULTRA LOW RESISTANCE |
| 雪崩能效等级（Eas） | 210 mJ | 210 mJ | 210 mJ | 210 mJ |
| 外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 55 V | 55 V | 55 V | 55 V |
| 最大漏极电流 (ID) | 20 A | 20 A | 20 A | 44 A |
| 最大漏源导通电阻 | 0.027 Ω | 0.027 Ω | 0.027 Ω | 0.027 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-252AA | TO-251AA | TO-252AA | TO-252AA |
| JESD-30 代码 | R-PSSO-G2 | R-PSIP-T3 | R-PSSO-G2 | R-PSSO-G2 |
| JESD-609代码 | e0 | e0 | e3 | e0 |
| 湿度敏感等级 | 1 | 1 | 1 | 1 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 2 | 3 | 2 | 2 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | IN-LINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | 245 | 260 | 245 |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 160 A | 160 A | 160 A | 160 A |
| 表面贴装 | YES | NO | YES | YES |
| 端子面层 | TIN LEAD | Tin/Lead (Sn/Pb) | Matte Tin (Sn) - with Nickel (Ni) barrie | TIN LEAD |
| 端子形式 | GULL WING | THROUGH-HOLE | GULL WING | GULL WING |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | 30 | 30 | 30 |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 | 1 |
| Is Samacsys | N | - | N | N |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | - |
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