PD- 91822C
SMPS MOSFET
IRFPS37N50A
HEXFET
®
Power MOSFET
Applications
l
Switch Mode Power Supply (SMPS)
l
Uninterruptable Power Supply
l
High Speed Power Switching
Benefits
l
Low Gate Charge Qg results in Simple
Drive Requirement
l
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche Voltage and Current
l
Effective Coss Specified (See AN
1001)
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
V
DSS
500V
R
DS(on)
max
0.13Ω
I
D
36A
SUPER-247
Max.
36
23
144
446
3.6
± 30
3.5
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies
l
l
Full Bridge Converters
Power Factor Correction Boost
Notes
through
are on page 8
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1
12/14/99
IRFPS37N50A
Static @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Parameter
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
500
–––
2.0
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
0.13
Ω
V
GS
= 10V, I
D
= 22A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
25
V
DS
= 500V, V
GS
= 0V
µA
250
V
DS
= 400V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 30V
nA
-100
V
GS
= -30V
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
20
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
23
98
52
80
5579
810
36
7905
221
400
Max. Units
Conditions
–––
S
V
DS
= 50V, I
D
= 22A
180
I
D
= 36A
46
nC V
DS
= 400V
71
V
GS
= 10V, See Fig. 6 and 13
–––
V
DD
= 250V
–––
I
D
= 36A
ns
–––
R
G
= 2.15Ω
–––
R
D
= 7.0Ω,See Fig. 10
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz, See Fig. 5
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 400V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 400V
Avalanche Characteristics
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
1260
36
44
Units
mJ
A
mJ
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.28
–––
40
Units
°C/W
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
36
––– –––
showing the
A
G
integral reverse
––– ––– 144
S
p-n junction diode.
––– ––– 1.5
V
T
J
= 25°C, I
S
= 36A, V
GS
= 0V
––– 570 860
ns
T
J
= 25°C, I
F
= 36A
––– 8.6
13
µC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
2
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IRFPS37N50A
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
I
D
, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
10
10
4.5V
1
4.5V
0.1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
I
D
= 36A
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain-to-Source Current (A)
2.5
100
2.0
T
J
= 150
°
C
1.5
T
J
= 25
°
C
10
1.0
0.5
1
4.0
V DS = 50V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFPS37N50A
100000
V
GS
, Gate-to-Source Voltage (V)
V
G S
= 0V,
f = 1M Hz
C
is s
= C
g s
+ C
g d
, C
d s
SHORTED
C
rs s
= C
g d
C
o ss
= C
d s
+ C
g d
20
I
D
= 36A
V
DS
= 400V
V
DS
= 250V
V
DS
= 100V
16
C , C apacitance (pF )
10000
C
iss
12
1000
C
oss
8
100
4
C
rss
10
1
10
100
1000
A
0
0
40
80
FOR TEST CIRCUIT
SEE FIGURE 13
120
160
200
V
D S
, D rain-to-Source Volta ge (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
SD
, Reverse Drain Current (A)
I
D
, Drain Current (A)
100
100
10us
T
J
= 150
°
C
10
100us
T
J
= 25
°
C
1
10
1ms
0.1
0.2
V
GS
= 0 V
0.4
0.6
0.8
1.0
1.2
1.4
1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
10
100
10ms
1000
10000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFPS37N50A
40
V
DS
V
GS
R
D
D.U.T.
+
I
D
, Drain Current (A)
30
R
G
-
V
DD
10V
20
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
10
V
DS
90%
0
25
50
75
100
125
150
T
C
, Case Temperature
( °C)
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1
Thermal Response (Z
thJC
)
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
0.01
0.001
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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