PD - 9.1234
IRFPC60LC
HEXFET
®
Power MOSFET
Ultra Low Gate Charge
Reduced Gate Drive Requirement
Enhanced 30V V
gs
Rating
Reduced C
iss
, C
oss
, C
rss
Isolated Central Mounting Hole
Dynamic dv/dt Rated
Repetitive Avalanche Rated
Description
This new series of Low Charge HEXFET Power MOSFETs achieve significantly
lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet
technology the device improvements allow for reduced gate drive requirements,
faster switching speeds and increased total system savings. These device
improvements combined with the proven ruggedness and reliability of HEXFETs
offer the designer a new standard in power transistors for switching applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
V
DSS
= 600V
R
DS(on)
= 0.40
Ω
I
D
= 16A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
16
10
64
280
2.2
±30
1000
16
28
3.0
-55 to + 150
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
––––
––––
Typ.
––––
0.24
––––
Max.
0.45
––––
––––
Units
°C/W
40
Revision 0
IRFPC60LC
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆
V
(BR)DSS
/
∆
T
J
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
600
–––
–––
2.0
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, ID = 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.40
Ω
V
GS
= 10V, I
D
= 9.6A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 50V, I
D
= 9.6A
25
V
DS
= 600V, V
GS
= 0V
µA
250
V
DS
= 480V, V
GS
= 0V, T
J
= 125°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
120
I
D
= 16A
29
nC
V
DS
= 360V
48
V
GS
= 10V, See Fig. 6 and 13
–––
V
DD
= 300V
–––
I
D
= 16A
ns
–––
R
G
= 4.3Ω
–––
R
D
= 18Ω, See Fig. 10
Between lead,
––– 5.0 –––
6mm (0.25in.)
nH
from package
––– 13
–––
and center of die contact
––– 3500 –––
V
GS
= 0V
––– 400 –––
pF
V
DS
= 25V
––– 39 –––
ƒ = 1.0MHz, See Fig. 5
Typ.
–––
0.63
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
17
57
43
38
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
650
6.0
16
A
64
1.8
980
9.0
V
ns
µC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 16A, V
GS
= 0V
T
J
= 25°C, I
F
= 16A
di/dt = 100A/µs
S
+L
D
)
Intrinsic turn-on time is negligible (turn-on is dominated by L
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
16A, di/dt
≤
140A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300µs; duty cycle
≤
2%.
V
DD
= 25V, starting T
J
= 25°C, L = 7.2mH
R
G
= 25Ω, I
AS
= 16A. (See Figure 12)
IRFPC60LC
1 00
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
10
BOTTOM 4.5V
TOP
1 00
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
10
BOTTOM 4.5V
TOP
4.5V
1
1
0.1
4.5V
20µs PULSE WIDTH
T
C
= 25°C
0.1
1
10
100
0.1
0.01
0.01
0.01
0.01
20µs PULSE WIDTH
T
C
= 150°C
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics,
T
C
= 25
o
C
Fig 2.
Typical Output Characteristics,
T
C
= 150
o
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
100
3.0
I
D
= 16A
I
D
, D rain-to-So urce Cu rre nt (A )
T
J
= 15 0°C
10
2.5
2.0
1
T
J
= 2 5°C
1.5
1.0
0.1
0.5
0.01
4
5
6
7
V
D S
= 1 0 0V
2 0 µ s P U LS E W ID TH
8
9
10
0.0
-60
-40
-20
0
20
40
60
80
V
GS
= 10V
100 120 140 1 60
V
G S
, G a te-to-S o urce V olta ge (V )
T
J
, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRFPC60LC
7 00 0
20
6 00 0
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
I
D
= 16A
V
= 360V
DS
V
DS
= 240V
V
DS
= 120V
16
C, Capacitance (pF)
5 00 0
12
4 00 0
C
iss
3 00 0
8
2 00 0
GS
4
1 00 0
0
1
C
oss
C
rss
10
1 00
V
0
0
30
60
FOR TEST CIRCUIT
SEE FIGURE 13
90
12 0
V DS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
D
, Drain Current (A)
100
10µs
10
T
J
= 150°C
T
J
= 25°C
100µs
10
1ms
1
0
0.4
0.8
1.2
V
GS
= 0V
1.6
2
1
1
T
C
= 25°C
T
J
= 150°C
Single Pulse
10
100
10ms
1000
100 00
V
SD
, Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
IRFPC60LC
V
DS
16
R
D
V
GS
R
G
D.U.T.
V
DD
I
D
, Drain Current (Amps)
12
10 V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
8
Fig 10a.
Switching Time Test Circuit
4
0
25
50
75
100
125
150
T
C
, Case Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
1
T herm al R esponse (Z
thJC
)
D = 0 .5 0
0.1
0 .2 0
0 .1 0
0 .0 5
0 .0 2
P
D M
0.01
0 .0 1
S IN G L E P UL SE
(T H E R M AL R E S P O N S E )
N o te s :
1 . D u ty fa c to r D = t
1
/ t
2
t
1
t
2
0.001
0.00001
2 . P e a k T
J
= P
D M
x Z
th J C
+ T C
0.0001
0.001
0.01
0 .1
1
10
t
1
, R ectangular Pulse D uration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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