PD - 95055
IRFP4710PbF
HEXFET
®
Power MOSFET
Applications
l
High frequency DC-DC converters
l
Motor Control
l
Uninterruptible Power Supplies
l
Lead-Free
Benefits
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
V
DSS
100V
R
DS(on)
max
0.014Ω
I
D
72A
TO-247AC
Max.
72
51
300
190
1.2
± 20
8.2
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.81
–––
40
Units
°C/W
Notes
through
are on page 8
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1
2/26/04
IRFP4710PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
100
–––
–––
3.5
–––
–––
–––
–––
Typ.
–––
0.11
0.011
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.014
Ω
V
GS
= 10V, I
D
= 45A
5.5
V
V
DS
= V
GS
, I
D
= 250µA
1.0
V
DS
= 95V, V
GS
= 0V
µA
250
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
35
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
110
43
40
35
130
41
38
6160
440
250
1580
280
430
Max. Units
Conditions
–––
S
V
DS
= 50V, I
D
= 45A
170
I
D
= 45A
–––
nC V
DS
= 50V
–––
V
GS
= 10V,
–––
V
DD
= 50V
–––
I
D
= 45A
ns
–––
R
G
= 4.5Ω
–––
V
GS
= 10V
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 80V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 80V
Avalanche Characteristics
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
190
45
20
Units
mJ
A
mJ
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
72
––– –––
showing the
A
G
integral reverse
––– ––– 300
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 45A, V
GS
= 0V
––– 74 110
ns
T
J
= 25°C, I
F
= 45A
––– 180 260
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
2
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IRFP4710PbF
1000
VGS
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
TOP
1000
I
D
, Drain-to-Source Current (A)
100
10
1
I
D
, Drain-to-Source Current (A)
100
VGS
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
TOP
10
6.0V
0.1
6.0V
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
0.01
0.1
1
0.1
20µs PULSE WIDTH
T
J
= 175
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 75A
I
D
, Drain-to-Source Current (A)
100
T
J
= 175
°
C
2.5
2.0
10
1.5
T
J
= 25
°
C
1
1.0
0.5
0.1
6.0
V DS = 50V
20µs PULSE WIDTH
7.0
8.0
9.0
10.0
V
GS
, Gate-to-Source Voltage (V)
0.0
-60 -40 -20 0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFP4710PbF
10000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
20
I
D
= 45A
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
8000
V
GS
, Gate-to-Source Voltage (V)
16
C, Capacitance(pF)
Ciss
6000
12
4000
8
2000
Coss
0
1
4
Crss
10
100
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
40
80
120
160
200
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
ID, Drain-to-Source Current (A)
100
100µsec
10
T
J
= 175
°
C
10
1
T
J
= 25
°
C
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
10msec
0.1
0.0
V
GS
= 0 V
0.4
0.8
1.2
1.6
0.1
V
SD
,Source-to-Drain Voltage (V)
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFP4710PbF
80
V
DS
V
GS
R
D
60
R
G
10V
D.U.T.
+
-
V
DD
I
D
, Drain Current (A)
40
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
20
V
DS
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature
( ° C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
10
(Z
thJC
)
1
D = 0.50
Thermal Response
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T
0.01
0.00001
0.0001
0.001
0.01
P
DM
t
1
t
2
t
1
/ t
2
+T
C
1
J
= P
DM
x Z
thJC
0.1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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