14 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
14 A, 500 V, 0.4 ohm, N沟道, 硅, POWER, 场效应管, TO-247交流
| 参数名称 | 属性值 |
| 厂商名称 | SAMSUNG(三星) |
| 零件包装代码 | TO-3P |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 |
| 针数 | 3 |
| Reach Compliance Code | unknow |
| 配置 | SINGLE |
| 最小漏源击穿电压 | 450 V |
| 最大漏极电流 (Abs) (ID) | 14 A |
| 最大漏极电流 (ID) | 13 A |
| 最大漏源导通电阻 | 0.4 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PSFM-T3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL |
| 最大功率耗散 (Abs) | 180 W |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 晶体管元件材料 | SILICON |
| IRFP451 | IRFP450 | IRFP452 | IRFP453 | |
|---|---|---|---|---|
| 描述 | 14 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC | 14 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC | 14 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC | 14 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC |
| 厂商名称 | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) |
| 零件包装代码 | TO-3P | TO-3P | TO-3P | TO-3P |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| 针数 | 3 | 3 | 2 | 2 |
| Reach Compliance Code | unknow | unknown | unknow | unknow |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小漏源击穿电压 | 450 V | 500 V | 500 V | 450 V |
| 最大漏极电流 (Abs) (ID) | 14 A | 14 A | 12 A | 12 A |
| 最大漏极电流 (ID) | 13 A | 13 A | 12 A | 12 A |
| 最大漏源导通电阻 | 0.4 Ω | 0.4 Ω | 0.5 Ω | 0.5 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | 180 W | 180 W | 180 W | 180 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
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