SMPS MOSFET
PD - 95481
IRFP3703PbF
HEXFET
®
Power MOSFET
Applications
l
Synchronous Rectification
l
Active ORing
l
Lead-Free
Benefits
l
Ultra Low On-Resistance
l
Low Gate Impedance to Reduce Switching
Losses
l
Fully Avalanche Rated
TO-247AC
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
A
= 25°C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
V
DSS
30V
R
DS(on)
max
0.0028Ω
I
D
210A
Max.
210
100
1000
230
3.8
1.5
± 20
5.0
-55 to + 175
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.65
–––
40
Units
°C/W
Typical SMPS Topologies
l
l
Forward and Bridge Converters with Synchronous Rectification for Telecom and
Industrial Applications
Offline High Power AC/DC Convertors using Synchronous Rectification
1
7/16/04
Notes
through
are on page 8
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IRFP3703PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Min.
30
–––
–––
Static Drain-to-Source On-Resistance
–––
Gate Threshold Voltage
2.0
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.028
2.3
2.8
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
2.8
V
GS
= 10V, I
D
= 76A
mΩ
3.9
V
GS
= 7.0V, I
D
= 76A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
20
V
DS
= 24V, V
GS
= 0V
µA
250
V
DS
= 24V, V
GS
= 0V, T
J
= 150°C
200
V
GS
= 20V
nA
-200
V
GS
= -20V
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
209
62
42
18
123
53
24
8250
3000
290
10360
3060
2590
Max. Units
Conditions
–––
S
V
DS
= 24V, I
D
= 76A
–––
I
D
= 76A
–––
nC V
DS
= 24V
–––
V
GS
= 10V,
–––
V
DD
= 15V, V
GS
= 10V
–––
I
D
= 76A
ns
–––
R
G
= 1.8Ω
–––
V
GS
= 10V
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 24V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 24V
Avalanche Characteristics
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
1700
76
23
Units
mJ
A
mJ
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
––– 210
––– 1000
0.8
80
185
1.3
120
275
V
ns
nC
A
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
T
J
= 25°C, I
S
= 76A, V
GS
= 0V
T
J
= 25°C, I
F
= 76A, V
DS
= 16V
di/dt = 100A/µs
2
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IRFP3703PbF
10000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
1000
I
D
, Drain-to-Source Current (A)
1000
100
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
4.5V
10
4.5V
1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
10
0.1
20µs PULSE WIDTH
T
J
= 175
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
10000
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 260A
I
D
, Drain-to-Source Current (A)
1.5
1000
T
J
= 25
°
C
T
J
= 175
°
C
1.0
100
0.5
10
4.0
V DS = 15V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
10.0
V
GS
, Gate-to-Source Voltage (V)
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFP3703PbF
14000
12000
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 76A
V
DS
= 24V
16
C, Capacitance (pF)
10000
8000
6000
4000
2000
0
Ciss
12
8
Coss
4
Crss
1
10
100
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
40
80
120
160
200
240
280
320
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
10000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T
J
= 175
°
C
10
I
D
, Drain Current (A)
100
1000
10us
100us
T
J
= 25
°
C
1
100
1ms
0.1
0.0
V
GS
= 0 V
0.4
0.8
1.2
1.6
2.0
2.4
10
T
C
= 25 ° C
T
J
= 175 ° C
Single Pulse
1
10
10ms
100
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFP3703PbF
250
LIMITED BY PACKAGE
200
V
DS
V
GS
R
G
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
R
D
D.U.T.
+
I
D
, Drain Current (A)
-
V
DD
150
100
Fig 10a.
Switching Time Test Circuit
50
V
DS
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( °C)
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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