CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
I
D(ON)
I
GSS
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
Measured from the Drain
Lead, 6mm (0.25in) from the
Package to the Center of the
Die
Measured from the Source
Lead, 6mm (0.25in) from
Header to the Source
Bonding Pad
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
L
D
G
L
S
S
TEST CONDITIONS
V
GS
= 0V, I
D
= 250µA (Figure 10)
V
GS
= V
DS
, I
D
= 250µA
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C
V
DS
> I
D(ON) x
r
DS(ON)MAX
, V
GS
= 10V
V
GS
=
±20V
V
GS
= 10V, I
D
= 5.5A (Figures 8, 9)
V
DS
≥
50V, I
D
= 5.5A (Figure 12)
V
DD
=
200V, I
D
≈
11A, R
GS
= 9.1Ω, R
L
= 17.4Ω
MOSFET Switching Times are Essentially
Independent of Operating Temperature
MIN
400
2.0
-
-
11
-
-
6.1
-
-
-
-
TYP
-
-
-
-
-
-
0.47
9.1
14
27
50
24
41
6.0
23
1250
300
80
5.0
MAX
-
4.0
25
250
-
±100
0.55
-
21
41
75
36
63
-
-
-
-
-
-
UNITS
V
V
µA
µA
A
nA
Ω
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero-Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Internal Drain Inductance
V
GS
= 10V, I
D
= 10A, V
DS
= 0.8 x Rated BV
DSS,
I
g(REF)
= 1.5mA (Figure 14) Gate Charge is
Essentially Independent of Operating Temperature
-
-
-
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz (Figure 11)
-
-
-
-
Internal Source Inductance
L
S
-
12.5
-
nH
Junction to Case
Junction to Ambient
R
θJC
R
θJA
Free Air Operation
-
-
-
-
0.83
30
oC/W
oC/W
4-330
IRFP340
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
I
SD
I
SDM
TEST CONDITIONS
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
G
D
MIN
-
-
TYP
-
-
MAX
11
44
UNITS
A
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
NOTES:
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= 11A, V
GS
= 0V (Figure 13)
T
J
= 25
o
C, I
SD
= 10A, dI
SD
/dt = 100A/µs
T
J
= 25
o
C, I
SD
= 10A, dI
SD
/dt = 100A/µs
-
170
1.6
-
370
3.8
2.0
790
8.2
V
ns
µC
2. Pulse test: pulse width
≤
300µs, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 7.0mH, R
G
= 50Ω, peak I
AS
= 11A.
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
Unless Otherwise Specified
15
0.8
0.6
0.4
0.2
0
I
D
, DRAIN CURRENT (A)
0
50
100
150
12
9
6
3
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
Z
θJC
, NORMALIZED
THERMAL IMPEDANCE
0.5
0.2
0.1
0.1
0.05
10
-2
0.02
0.01
SINGLE PULSE
t
1
t
2
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
10
-4
0.1
10
-3
10
-2
t
1
, RECTANGULAR PULSE DURATION (s)
1
10
P
DM
10
-3
10
-5
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
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