PD - 94407
SMPS MOSFET
Applications
l
Hard Switching Primary or PFC Switch
l
Switch Mode Power Supply (SMPS)
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
Motor Drive
Benefits
l
Low Gate Charge Qg results in Simple
Drive Requirement
l
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche Voltage and Current
l
Enhanced Body Diode dv/dt Capability
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting torqe, 6-32 or M3 screw
IRFP27N60K
HEXFET
®
Power MOSFET
V
DSS
600V
R
DS(on)
typ.
180mΩ
I
D
27A
TO-247AC
Max.
27
18
110
500
4.0
± 30
13
-55 to + 150
300
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Avalanche Characteristics
Symbol
E
AS
I
AR
E
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
530
27
50
Units
mJ
A
mJ
Thermal Resistance
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.29
–––
40
Units
°C/W
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1
03/20/02
IRFP27N60K
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
600 ––– –––
V
V
GS
= 0V, I
D
= 250µA
––– 0.64 ––– V/°C Reference to 25°C, I
D
= 1mA
––– 180 220
mΩ V
GS
= 10V, I
D
= 16A
3.0
––– 5.0
V
V
DS
= V
GS
, I
D
= 250µA
––– ––– 50
V
DS
= 600V, V
GS
= 0V
µA
––– ––– 250
V
DS
= 480V, V
GS
= 0V, T
J
= 125°C
––– ––– 100
V
GS
= 30V
nA
––– ––– -100
V
GS
= -30V
Min.
14
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
27
110
43
38
4660
460
41
5490
120
250
Max. Units
Conditions
–––
S
V
DS
= 50V, I
D
= 16A
180
I
D
= 27A
56
nC
V
DS
= 480V
86
V
GS
= 10V, See Fig. 6 and 13
–––
V
DD
= 300V
–––
I
D
= 27A
ns
–––
R
G
= 4.3Ω
–––
V
GS
= 10V,See Fig. 10
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz, See Fig. 5
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 480V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 480V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCurrent
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
27
A
110
––– ––– 1.5
V
––– 620 920
ns
––– 11
16
µC
––– 36
53
A
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 27A, V
GS
= 0V
T
J
= 25°C, I
F
= 27A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
Pulse width
≤
300µs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS.
Starting T
J
= 25°C, L = 1.4mH, R
G
= 25Ω,
I
AS
= 27A, dv/dt = 13V/ns. (See Figure 12a)
I
SD
≤
27A, di/dt
≤
390A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C.
2
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IRFP27N60K
1000
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
100
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
100
10
10
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
TOP
5.0V
1
1
0.1
5.0V
0.01
0.1
20µs PULSE WIDTH
Tj = 25°C
0.001
0.1
1
10
100
0.01
0.1
1
20µs PULSE WIDTH
Tj = 150°C
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.00
3.5
I
D
= 28A
ID, Drain-to-Source Current
(Α
)
100.00
T J = 150°C
R
DS(on)
, Drain-to-Source On Resistance
3.0
2.5
(Normalized)
10.00
2.0
1.00
1.5
T J = 25°C
0.10
1.0
VDS = 100V
20µs PULSE WIDTH
0.01
5.0
7.0
9.0
11.0
13.0
15.0
0.5
0.0
-60
-40
-20
0
20
40
60
80
V
GS
= 10V
100
120
140
160
VGS, Gate-to-Source Voltage (V)
T
J
, Junction Temperature
(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFP27N60K
100000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
V
GS
, Gate-to-Source Voltage (V)
12
I
D
=
28A
10
V
DS
= 480V
V
DS
= 300V
V
DS
= 120V
10000
C, Capacitance(pF)
Ciss
7
1000
5
Coss
100
2
Crss
10
1
10
100
1000
0
0
30
60
90
120
150
VDS , Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
ID, Drain-to-Source Current (A)
100
I
SD
, Reverse Drain Current (A)
10
T
J
= 150
°
C
T
J
25
°
C
=
10
100µsec
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
10
100
1
0.1
0.2
0.5
0.8
V
GS
= 0 V
1.1
1.4
10msec
1000
10000
0.1
V
SD
,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFP27N60K
30
V
DS
25
R
D
V
GS
R
G
D.U.T.
+
20
-
V
DD
I
D
, Drain Current (A)
10V
15
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
10
Fig 10a.
Switching Time Test Circuit
V
DS
5
90%
0
25
50
75
100
125
150
T
C
, Case Temperature
( ° C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
1
(Z
thJC
)
D = 0.50
0.1
0.20
Thermal Response
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T
0.001
0.00001
t
1
/ t
2
J
= P
DM
x Z
thJC
P
DM
t
1
t
2
+T
C
1
0.0001
0.001
0.01
0.1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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