IRFP2907PbF
Typical Applications
l
Telecom applications requiring soft start
l
l
l
l
l
l
l
D
PD -95050C
HEXFET
®
Power MOSFET
V
DSS
= 75V
R
DS(on)
= 4.5mΩ
S
Benefits
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
G
I
D
= 209A
Description
This Stripe Planar design of HEXFET
®
Power MOSFETs
utilizes the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and
reliable device for use in a wide variety of applications.
TO-247AC
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Max.
209
148
840
470
3.1
± 20
1970
See Fig.12a, 12b, 15, 16
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.32
–––
40
Units
°C/W
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1
08/08/11
IRFP2907PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min.
75
–––
–––
2.0
130
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.085
3.6
–––
–––
–––
–––
–––
–––
410
92
140
23
190
130
130
5.0
13
––– 13000
––– 2100
––– 500
––– 9780
––– 1360
––– 2320
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250μA
––– V/°C Reference to 25°C, I
D
= 1mA
4.5
mΩ V
GS
= 10V, I
D
= 125A
4.0
V
V
DS
= 10V, I
D
= 250μA
–––
S
V
DS
= 25V, I
D
= 125A
20
V
DS
= 75V, V
GS
= 0V
μA
250
V
DS
= 60V, V
GS
= 0V, T
J
= 150°C
200
V
GS
= 20V
nA
-200
V
GS
= -20V
620
I
D
= 125A
140
nC
V
DS
= 60V
210
V
GS
= 10V
–––
V
DD
= 38V
–––
I
D
= 125A
ns
–––
R
G
= 1.2Ω
–––
V
GS
= 10V
D
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
S
–––
V
GS
= 0V
–––
pF
V
DS
= 25V
–––
ƒ = 1.0MHz, See Fig. 5
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 60V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 60V
Source-Drain Ratings and Characteristics
Min. Typ. Max. Units
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Conditions
D
MOSFET symbol
––– ––– 209
showing the
A
G
integral reverse
––– ––– 840
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 125A, V
GS
= 0V
––– 140 210
ns
T
J
= 25°C, I
F
= 125A
––– 880 1320 nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting T
J
= 25°C, L = 0.25mH
R
G
= 25Ω, I
AS
= 125A. (See Figure 12).
I
SD
≤
125A, di/dt
≤
260A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
400μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 90A.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
2
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IRFP2907PbF
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1000
I
D
, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
10
4.5V
4.5V
1
0.1
20μs PULSE WIDTH
T
J
= 25
°
C
1
10
100
10
0.1
20μs PULSE WIDTH
T
J
= 175
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 209A
I
D
, Drain-to-Source Current (A)
T
J
= 175
°
C
2.5
100
2.0
T
J
= 25
°
C
1.5
10
1.0
0.5
1
4.0
V DS = 25V
20μs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
10.0
0.0
-60 -40 -20 0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFP2907PbF
20000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + C
ds gd
20
I
D
= 125A
V
DS
= 60V
V
DS
= 37V
16000
V
GS
, Gate-to-Source Voltage (V)
16
C, Capacitance(pF)
Ciss
12000
12
8000
8
4000
Coss
Crss
1
10
100
4
0
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
200
300
400
500
600
700
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
I
SD
, Reverse Drain Current (A)
100
T
J
= 175
°
C
ID, Drain-to-Source Current (A)
1000
100
10
100μsec
10
1msec
T
J
= 25
°
C
1
1
0.1
0.0
V
GS
= 0 V
0.5
1.0
1.5
2.0
2.5
3.0
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
10msec
DC
0.1
100
1000
VDS, Drain-to-Source Voltage (V)
V
SD
,Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFP2907PbF
240
LIMITED BY PACKAGE
200
V
DS
V
GS
R
G
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
R
D
D.U.T.
+
I
D
, Drain Current (A)
160
-
V
DD
120
80
Fig 10a.
Switching Time Test Circuit
V
DS
90%
40
0
25
50
T
C
, Case Temperature ( ° C)
75
100
125
150
175
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1
Thermal Response ( Z thJC ) °C/W
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.0001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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