IRFP252概述

POWER, FET

POWER, 场效应晶体管

IRFP252规格参数

	IRFP252	IRFP250	IRFP251	IRFP253
描述	POWER, FET	POWER, FET	POWER, FET	POWER, FET
厂商名称	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)
零件包装代码	TO-3P	TO-3P	TO-3P	TO-3P
包装说明	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
针数	2	3	3	2
Reach Compliance Code	unknown	unknow	unknow	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99
配置	SINGLE	SINGLE	SINGLE	SINGLE
最小漏源击穿电压	200 V	200 V	150 V	150 V
最大漏极电流 (Abs) (ID)	27 A	30 A	33 A	27 A
最大漏极电流 (ID)	25 A	30 A	30 A	25 A
最大漏源导通电阻	0.12 Ω	0.085 Ω	0.085 Ω	0.12 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
元件数量	1	1	1	1
端子数量	3	3	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	180 W	190 W	180 W	180 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE	SINGLE
晶体管元件材料	SILICON	SILICON	SILICON	SILICON