Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . E
AS
Operating and Storage Temperature . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
TEST CONDITIONS
V
GS
= 0V, I
D
= 250µA (Figure 10)
250
275
V
GS(TH)
I
DSS
V
GS
= V
DS
, I
D
= 250µA
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V
T
J
= 125
o
C
2.0
-
-
-
-
-
-
-
-
-
4.0
25
250
V
V
V
µA
µA
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
IRFP244, IRFP245
IRFP246, IRFP247
Gate to Threshold Voltage
Zero-Gate Voltage Drain Current
On-State Drain Current (Note 2)
IRFP244, IRFP246
IRFP245, IRFP247
Gate to Source Leakage
Drain to Source On Resistance (Note 2)
IRFP244, IRFP246
IRFP245, IRFP247
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
I
D(ON)
V
DS
> I
D(ON) x
r
DS(ON)MAX
, V
GS
= 10V
(Figure 7)
15
14
-
-
-
-
-
±100
A
A
nA
I
GSS
r
DS(ON)
V
GS
=
±20V
V
GS
= 10V, I
D
= 10A (Figures 8, 9)
-
-
-
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
gs
Q
gd
V
GS
= 10V, I
D
= 15A, V
DS
= 0.8 x Rated
BV
DSS
, I
G(REF)
= 1.5mA (Figures 14, 19, 20)
Gate charge is Essentially Independent of
Operating Temperature
V
DS
≥
50V, I
D
= 10A (Figure 12)
V
DD
= 125V, I
D
≈
15A, R
G
= 9.1Ω, V
GS
= 10V,
R
L
= 8Ω (Figures 17, 18) MOSFET Switching
Times are Essentially Independent of
Operating Temperature
6.7
-
-
-
-
-
0.20
0.24
11
16
67
53
49
39
0.28
0.34
-
24
100
80
74
59
Ω
Ω
S
ns
ns
ns
ns
nC
-
-
6.6
20
-
-
nC
nC
5-2
IRFP244, IRFP245, IRFP246, IRFP247
Electrical Specifications
PARAMETER
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
C
ISS
C
OSS
C
RSS
L
D
Measured fRom the
Drain Lead, 6mm
(0.25in) From Pack-
age to the Center of
Die
Measured from The
Source Lead, 6mm
(0.25in) from the
Header to the Source
Bonding Pad
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
L
D
G
L
S
S
TEST CONDITIONS
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz
(Figure 11)
MIN
-
-
-
-
TYP
1300
320
69
5.0
MAX
-
-
-
-
UNITS
pF
pF
pF
nH
Internal Source Inductance
L
S
-
12.5
-
nH
Junction to Case
Junction to Ambient
R
θJC
R
θJA
Free Air Operation
-
-
-
-
0.83
30
o
C/W
o
C/W
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
I
SD
I
SDM
TEST CONDITIONS
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
G
D
MIN
-
-
TYP
-
-
MAX
15
60
UNITS
A
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
NOTES:
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= 15A, V
GS
= 0V (Figure 13)
T
J
= 25
o
C, I
SD
= 14A, dI
SD
/dt = 100A/µs
T
J
= 25
o
C, I
SD
= 14A, dI
SD
/dt = 100A/µs
-
150
1.6
-
300
3.4
1.8
640
7.2
V
ns
µC
2. Pulse test: pulse width
≤
300µs, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 4.0µH, R
G
= 25Ω, peak I
AS
= 15A. See Figures 15, 16.
5-3
IRFP244, IRFP245, IRFP246, IRFP247
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
I
D
, DRAIN CURRENT (A)
Unless Otherwise Specified
15
12
IRFP244, IRFP246
0.8
0.6
0.4
0.2
0
9
IRFP245, IRFP247
6
3
0
0
50
100
150
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
Z
θJC
, NORMALIZED
THERMAL IMPEDANCE
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
10
-2
SINGLE PULSE
10
-3
10
-5
P
DM
t
1
t
2
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
10
-3
10
-2
0.1
1
10
10
-4
t
1
, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
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