Provisional Data Sheet No. PD-9.1555
HEXFET
®
POWER MOSFET
1000 Volt, 3.5Ω HEXFET
Ω
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis-
tors. The efficient geometry achieves very low on-
state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-es-
tablish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits.
The Surface Mount Device (SMD-1) package repre-
sents another step in the continual evolution of sur-
face mount technology. The SMD-1 will give
designers the extra flexibility they need to increase
circuit board density. International Rectifier has en-
gineered the SMD-1 package to meet the specific
needs of the power market by increasing the size of
the termination pads, thereby enhancing thermal and
electrical performance.
IRFNG40
N-CHANNEL
Product Summary
Part Number
IRFNG40
BV
DSS
1000V
R
DS(on)
3.5Ω
I
D
3.9A
Features:
s
s
s
s
s
s
s
Avalanche Energy Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light-weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C Continuous Drain Current
I D @ VGS = 10V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
PD @ TC = 25°C
VGS
EAS
I AR
EAR
dv/dt
TJ
TSTG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
IRFNG40
3.9
2.5
15.6
125
1.0
±20
530
3.9
12.5
1.0
-55 to 150
300 (for 5 seconds)
2.6 (typical)
Units
A
W
W/K
V
mJ
A
mJ
V/ns
o
C
g
IRFNG40 Device
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min.
1000
—
—
—
2.0
3.3
—
—
—
—
51
5.4
29
—
—
—
—
—
Typ. Max. Units
—
1.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.0
—
—
3.5
4.2
4.0
—
25
250
100
-100
120
12
66
30
50
170
50
—
V
V/°C
Test Conditions
VGS = 0V, ID = 1.0 mA
Reference to 25°C, ID = 1.0 mA
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
VGS = 10V, ID = 2.5A
Ω
VGS = 10V, ID = 3.9A
V
VDS = VGS, ID = 250µA
S( )
VDS > 15V, IDS = 2.5A
VDS = 0.8 x Max Rating,VGS = 0V
µA
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
nA
VGS = -20V
VGS =10V, ID = 3.9A
nC
VDS = Max. Rating x 0.5
see figures 6 and 13
VDD = 500V, ID = 3.9A,
RG = 9.1Ω, VGS = 10V
ns
Ω
see figure 10
Measured from the
Modified MOSFET
drain lead, 6mm (0.25
symbol showing the
in.) from package to
internal inductances.
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
LS
Internal Source Inductance
—
6.5
—
nH
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1700
250
100
—
—
—
pF
VGS = 0V, VDS = 25V
f = 1.0 MHz
see figure 5
Source-Drain Diode Ratings and Characteristics
Parameter
IS
I SM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Min. Typ. Max. Units
—
—
—
—
3.9
15.6
Test Conditions
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
A
VSD
t rr
Q RR
t on
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
—
—
—
—
—
—
1.8
1000
5.6
V
ns
µC
T
j
= 25°C, IS = 3.9A, VGS = 0V
Tj = 25°C, IF = 3.9A, di/dt
≤
100A/µs
VDD
≤
50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + LD.
Thermal Resistance
Parameter
RthJC
RthJPCB
Junction-to-Case
Junction-to-PC Board
Min. Typ. Max. Units
—
—
—
TBD
1.0
—
K/W
Test Conditions
Soldered to a copper clad PC board
IRFNG40 Device
Fig. 1 — Typical Output Characteristics
T
C
= 25°C
Fig. 2 — Typical Output Characteristics
T
C
= 150°C
ID = 3.9A
Fig. 3 — Typical Transfer Characteristics
Fig. 4 — Normalized On-Resistance Vs.Temperature
I D = 3.9A
Fig. 5 — Typical Capacitance Vs. Drain-to-Source
Voltage
Fig. 6 — Typical Gate Charge Vs. Gate-to-Source
Voltage
IRFNG40 Device
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
D
, Drain Current (A)
10
10us
100us
1
1ms
0.1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
10
100
10ms
1000
10000
V
DS
, Drain-to-Source Voltage (V)
Fig. 7 — Typical Source-to-Drain Diode Forward
Voltage
Fig. 8 — Maximum Safe Operating Area
Fig. 9 — Maximum Drain Current Vs. Case Temperature
Fig. 10a — Switching Time Test Circuit
Fig. 10b — Switching Time Waveforms
IRFNG40 Device
10
Thermal Response (Z
thJC
)
1
0.50
0.20
0.1
0.10
0.05
0.02
0.01
P
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T = P
DM
x Z
thJC
+ T
C
J
0.001
0.01
0.1
1
0.01
0.00001
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
Fig. 12a — Unclamped Inductive Test Circuit
Fig. 12b — Unclamped Inductive Waveforms
Fig. 12c — Max. Avalanche Energy vs. Current
Fig. 13a — Gate Charge Test Circuit
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