IRFN250SMD
MECHANICAL DATA
Dimensions in mm (inches)
0 .8 9
(0 .0 3 5 )
m in .
3 .7 0 (0 .1 4 6 )
3 .7 0 (0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
4 .1 4 (0 .1 6 3 )
3 .8 4 (0 .1 5 1 )
N–CHANNEL
POWER MOSFET
3 .6 0 (0 .1 4 2 )
M a x .
1
3
0 .7 6
(0 .0 3 0 )
m in .
V
DSS
I
D(cont)
R
DS(on)
FEATURES
200V
14A
0.100
W
1 0 .6 9 (0 .4 2 1 )
1 0 .3 9 (0 .4 0 9 )
2
1 6 .0 2 (0 .6 3 1 )
1 5 .7 3 (0 .6 1 9 )
• HERMETICALLY SEALED SURFACE
MOUNT PACKAGE
• SMALL FOOTPRINT – EFFICIENT USE OF
PCB SPACE.
9 .6
9 .3
1 1 .5
1 1 .2
7 (0
8 (0
8 (0
8 (0
.3 8
.3 6
.4 5
.4 4
1 )
9 )
6 )
4 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• HIGH PACKING DENSITIES
SMD PACKAGE
Pad 1 – Source
Pad 2 – Drain
Pad 3 – Gate
Note:
IRFxxxSM also available with
pins 1 and 3 reversed.
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
GS
I
D
I
D
I
DM
P
D
E
AS
dv/dt
T
J
, T
stg
T
L
R
q
JC
R
q
J–PCB
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Single Pulse Avalanche Energy
2
Peak Diode Recovery
3
Operating and Storage Temperature Range
Package Mounting Surface Temperature (for 5 sec)
Thermal Resistance Junction to Case
Thermal Resistance Junction to PCB (Typical)
(V
GS
= 0 , T
case
= 25°C)
(V
GS
= 0 , T
case
= 100°C)
±20V
22A
14A
88A
100W
0.8W/°C
500mJ
5.0V/ns
–55 to 150°C
300°C
1.25°C/W
3°C/W
Notes
1) Pulse Test: Pulse Width
£
300ms,
d £
2%
2) @ V
DD
= 50V , L
³
1.5mH , R
G
= 25
W
, Peak I
L
= 22A , Starting T
J
= 25°C
3) @ I
SD
£
22A , di/dt
£
190A/
m
s , V
DD
£
BV
DSS
, T
J
£
150°C , SUGGESTED R
G
= 2.35
W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 7/00
IRFN250SMD
ELECTRICAL CHARACTERISTICS
(Tamb = 25°C unless otherwise stated)
Parameter
BV
DSS
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
Test Conditions
V
GS
= 0
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
³
15V
V
GS
= 0
V
GS
= 20V
V
GS
= –20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DS
= 0.5BV
DSS
I
D
= 22A
V
DS
= 0.5BV
DSS
V
DD
= 100V
I
D
= 22A
R
G
= 2.35
W
I
D
= 22A
I
D
= 14A
I
D
= 22A
I
D
= 250
m
A
I
DS
= 14A
V
DS
= 0.8BV
DSS
T
J
= 125°C
I
D
= 1mA
Min.
200
Typ.
Max.
Unit
V
D
BV
DSS
Temperature Coefficient of
D
T
J
Breakdown Voltage
R
DS(on)
Static Drain – Source On–State
Resistance
1
Forward Transconductance
1
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
1
Gate – Source Charge
1
Gate – Drain (“Miller”) Charge
1
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Reference to 25°C
0.29
0.100
0.105
2
9
25
250
100
–100
3500
700
110
55
8
30
115
22
60
35
190
170
130
22
88
4
V / °C
W
V
)
W
(
S(
W
V
GS(th)
Gate Threshold Voltage
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
m
A
nA
pF
nC
nC
ns
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current
2
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn–On Time
PACKAGE CHARACTERISTICS
Internal Drain Inductance
(from centre of drain pad to die)
Internal Source Inductance
(from centre of source pad to end of source bond wire)
I
S
= 22A
V
GS
= 0
I
F
= 22A
T
J
= 25°C
Negligible
0.8
2.8
d
i
/ d
t
£
100A/
m
s V
DD
£
50V
T
J
= 25°C
A
V
ns
1.9
950
9.0
m
C
nH
Notes
1) Pulse Test: Pulse Width
£
300ms,
d £
2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 7/00
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