Provisional Data Sheet No. PD-9.1549
HEXFET
®
POWER MOSFET
200 Volt, 0.100Ω HEXFET
Ω
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors. The effi-
cient geometry achieves very low on-state resistance com-
bined with high transconductance.
HEXFET transistors also feature all of the well-establish
advantages of MOSFETs, such as voltage control, very
fast switching, ease of paralleling and electrical param-
eter temperature stability. They are well-suited for appli-
cations such as switching power supplies, motor controls,
inverters, choppers, audio amplifiers, and high energy
pulse circuits.
The Surface Mount Device (SMD-1) package represents
another step in the continual evolution of surface mount
technology. The SMD-1 will give designers the extra flex-
ibility they need to increase circuit board density. Inter-
national Rectifier has engineered the SMD-1 package to
meet the specific needs of the power market by increas-
ing the size of the termination pads, thereby enhancing
thermal and electrical performance.
IRFN250
N-CHANNEL
Product Summary
Part Number
IRFN250
BV
DSS
200V
R
DS(on)
0.100Ω
I
D
27.4A
Features:
s
s
s
s
s
s
s
Avalanche Energy Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light-weight
Absolute Maximum Ratings
Parameter
I D @ VGS = 10V, TC = 25°C Continuous Drain Current
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
PD @ TC = 25°C
VGS
EAS
I AR
EAR
dv/dt
TJ
TSTG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
IRFN250
27.4
17
110
150
1.2
±20
500
27.4
15.0
5.0
-55 to 150
300 (for 5 seconds)
2.6 (typical)
Units
A
W
W/K
V
mJ
A
mJ
V/ns
o
C
g
IRFN250 Device
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min.
200
—
—
—
2.0
9.0
—
—
—
—
55
8.0
30
—
—
—
—
—
Typ. Max. Units
—
0.29
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.0
—
—
0.100
0.105
4.0
—
25
250
100
-100
115
22
60
35
190
170
130
—
V
V/°C
Test Conditions
VGS = 0V, ID = 1.0 mA
Reference to 25°C, I D = 1.0 mA
IGSS
IGSS
Qg
Qgs
Qgd
t d(on)
tr
t d(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
VGS = 10V, ID = 17A
Ω
VGS = 10V, I D = 27.4A
V
VDS = VGS, ID = 250µA
S( )
VDS > 15V, I DS = 17A
VDS = 0.8 x Max Rating,VGS = 0V
µA
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
nA
VGS = -20V
VGS = 10V, I D = 27.4A
nC
VDS = Max. Rating x 0.5
see figures 6 and 13
VDD = 100V, ID = 27.4A,
RG = 2.35Ω, VGS = 10V
ns
Ω
see figure 10
Measured from the
Modified MOSFET
drain lead, 6mm (0.25
symbol showing the
in.) from package to
internal inductances.
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
LS
Internal Source Inductance
—
6.5
—
nH
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
3500
700
110
—
—
—
pF
VGS = 0V, VDS = 25V
f = 1.0 MHz
see figure 5
Source-Drain Diode Ratings and Characteristics
Parameter
IS
I SM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Min. Typ. Max. Units
—
—
—
—
27.4
110
Test Conditions
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
A
VSD
t rr
Q RR
t on
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
—
—
—
—
—
—
1.9
950
9.0
V
ns
µC
T
j
= 25°C, IS = 27.4A, VGS = 0V
Tj = 25°C, IF = 27.4A, di/dt
≤
100A/µs
VDD
≤
50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC Board
Min. Typ. Max. Units
—
—
—
TBD
0.83
—
K/W
Test Conditions
Soldered to a copper clad PC board
IRFN250 Device
Fig. 1 — Typical Output Characteristics
T
C
= 25°C
Fig. 2 — Typical Output Characteristics
T
C
= 150°C
ID = 27.4A
Fig. 3 — Typical Transfer Characteristics
Fig. 4 — Normalized On-Resistance Vs.Temperature
ID = 27.4A
Fig. 5 — Typical Capacitance Vs. Drain-to-Source
Voltage
Fig. 6 — Typical Gate Charge Vs. Gate-to-Source
Voltage
IRFN250 Device
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
D
, Drain Current (A)
100
10us
100us
10
1ms
1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
100
10ms
1000
V
DS
, Drain-to-Source Voltage (V)
Fig. 7 — Typical Source-to-Drain Diode Forward
Voltage
Fig. 8 — Maximum Safe Operating Area
Fig. 9 — Maximum Drain Current Vs. Case Temperature
Fig. 10a — Switching Time Test Circuit
Fig. 10b — Switching Time Waveforms
IRFN250 Device
1
0.50
Thermal Response (Z
thJC
)
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T = P
DM
x Z
thJC
+ T
C
J
0.0001
0.001
0.01
0.1
1
0.01
0.001
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
Fig. 12a — Unclamped Inductive Test Circuit
Fig. 12b — Unclamped Inductive Waveforms
Fig. 12c — Max. Avalanche Energy vs. Current
Fig. 13a — Gate Charge Test Circuit
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