IRFM
MECHANICAL DATA
Dimensions in mm (inches)
N–CHANNEL
POWER MOSFET
V
DSS
I
D(cont)
R
DS(on)
D IA
1 .2 7 (.0 5 0 )
1 .0 2 (.0 4 0 )
6 .6 0 (.2 6 0 )
6 .3 2 (.2 4 9 )
1 3 .8 4 (.5 4 5 )
1 3 .5 9 (.5 3 5 )
6 .9 1 (.2 7 2 )
6 .8 1 (.2 6 8 )
200V
27.4A
0.100
W
3 .7 8 (.1 4 9 )
3 .5 3 (.1 3 9 )
2 0 .3 2 (.8 0 0 )
2 0 .0 6 (.7 9 0 )
1 3 .8 4 (.5 4 5 )
1 3 .5 9 (.5 3 5 )
1 7 .4 0 (.6 8 5 )
1 6 .8 9 (.6 6 5 )
FEATURES
• N–CHANNEL MOSFET
• HIGH VOLTAGE
• INTEGRAL PROTECTION DIODE
• HERMETIC ISOLATED TO-254 PAC
• CERAMIC SURFACE MOUNT PACK
OPTION
R 1 .0 1 (.0 4 0 ) M IN
G a te
S o u rc e
D r a in
1 .1 4 (.0 4 5 )
0 .8 9 (0 .3 5 )
D ia T y p
3 L e a d s
4 .9 5 (.1 9 5 )
4 .1 9 (.1 6 5 )
3 .8 1 (.1 5 0 ) B S C
9 .5 2 (.3 7 5 )
8 .7 6 (.3 4 5 )
3 .8 1 (.1 5 0 ) B S C
TO–254 Metal Package
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise stated)
V
GS
I
D
I
DM
P
D
I
L
dv / dt
R
q
JC
R
q
JA
R
q
CS
T
J
, T
STG
T
L
Gate – Source Voltage
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Avalanche Current , Clamped
1
Peak Diode Recovery
2
Thermal Resistance Junction – Case
Thermal Resistance Junction – Ambient
Thermal Resistance Case – Sink
Operating Junction and Storage Temperature Range
Lead Temperature (1.6mm from case for 10s)
@ T
C
= 25°C
@ V
GS
= 10V , T
C
= 25°C
@ V
GS
= 10V , T
C
= 100°C
±20V
27.4A
17A
110A
150W
1.2W / °C
27.4A
5.5V / ns
0.83°C / W
48°C / W
0.21°C / W typ.
–55 to 150°C
300°C
IRFM
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise stated)
Parameter
BV
DSS
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
Test Conditions
V
GS
= 0
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
³
15V
V
GS
= 0
V
GS
= 20V
V
GS
= –20V
I
D
= 17A
I
D
= 27.4A
I
D
= 250
m
A
I
DS
= 27.4A
V
DS
= 0.8BV
DSS
T
J
= 125°C
I
D
= 1mA
Min.
200
Typ.
Max
D
BV
DSS
Temperature Coefficient of
D
T
J
Breakdown Voltage
R
DS(on)
Static Drain – Source On–State
Resistance
2
Forward Transconductance
2
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain – Case Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn– On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Reference to 25°C
0.28
0.100
0.105
2
9
25
250
100
–100
3500
700
110
12
55
8
30
115
22
60
35
190
170
130
27.4
110
4
V
GS(th)
Gate Threshold Voltage
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
C
DC
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
I
D
= 27.4A
V
DS
= 0.5BV
DSS
V
DD
= 100V
I
D
= 27.4A
R
G
= 2.35
W
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current
1
Diode Forward Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
2
Forward Turn–On Time
PACKAGE CHARACTERISTICS
Internal Drain Inductance
Measured from 6mm down drain lead to centre of die
Internal Source Inductance
Measured from 6mm down source lead to source bond pad
I
S
= 27.4A
V
GS
= 0
I
F
= 27.4A
T
J
= 25°C
T
J
= 25°C
Negligible
8.7
8.7
1.9
950
9.0
d
i
/ d
t
£
100A/
m
s V
DD
£
50V
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